Patents by Inventor Mami Shirota
Mami Shirota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8617994Abstract: A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuK?1 ray (?=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2? (? is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2? range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2? range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2? range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less.Type: GrantFiled: December 17, 2012Date of Patent: December 31, 2013Assignee: Kao CorporationInventors: Mami Shirota, Yasuhiro Yoneda
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Patent number: 8357311Abstract: A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuK?1 ray (?=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2? (? is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2? range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2? range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2? range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less.Type: GrantFiled: December 28, 2007Date of Patent: January 22, 2013Assignee: Kao CorporationInventors: Mami Shirota, Yasuhiro Yoneda
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Patent number: 8058172Abstract: A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a polishing process of a semiconductor substrate, including the step of polishing a semiconductor substrate with a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a method for manufacturing a semiconductor device including the step of polishing a semiconductor substrate having a film formed on its surface, the film containing a silicon atom and having a shape with dents and projections, with a polishing pad pressed against a semiconductor substrate at a polishing load of from 5 to 100 kPa in the presence of a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the groupType: GrantFiled: March 18, 2009Date of Patent: November 15, 2011Assignee: Kao CorporationInventors: Yasuhiro Yoneda, Mami Shirota
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Patent number: 7879784Abstract: A stripping agent composition for a resist, containing (A) 0.1 to 10% by weight of an amine; (B) 80 to 99% by weight of an organic solvent having a Hansen's solubility parameter of from 18 to 33 MPa1/2; (C) 0.01 to 3% by weight of a sugar; and (D) 0 to 5% by weight of water; a method for stripping a resist, including the step of stripping the resist with the stripping agent composition; and a method for manufacturing a semiconductor device, including the step of stripping a resist with the stripping agent composition. By using the stripping composition of the present invention, for example, a high-quality IC or LSI semiconductor device circuit, especially a compound semiconductor device circuit can be more economically advantageously manufactured.Type: GrantFiled: August 4, 2004Date of Patent: February 1, 2011Assignee: KAO CorporationInventor: Mami Shirota
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Publication number: 20100056026Abstract: A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuK?1 ray (?=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2? (? is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2? range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2? range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2? range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less.Type: ApplicationFiled: December 28, 2007Publication date: March 4, 2010Applicant: KAO CORPORATIONInventors: Mami Shirota, Yasuhiro Yoneda
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Publication number: 20090181541Abstract: A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a polishing process of a semiconductor substrate, including the step of polishing a semiconductor substrate with a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a method for manufacturing a semiconductor device including the step of polishing a semiconductor substrate having a film formed on its surface, the film containing a silicon atom and having a shape with dents and projections, with a polishing pad pressed against a semiconductor substrate at a polishing load of from 5 to 100 kPa in the presence of a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the groupType: ApplicationFiled: March 18, 2009Publication date: July 16, 2009Inventors: Yasuhiro YONEDA, Mami Shirota
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Publication number: 20070145014Abstract: The present invention provides a polishing composition for a glass substrate having a pH of from 0.5 to 5, containing a silica of which primary particles have an average particle size of from 5 to 50 nm and an acrylic acid/sulfonic acid copolymer having a weight-average molecular weight of from 1,000 to 5,000; and a method for manufacturing a glass substrate using the polishing composition. The polishing composition for a glass substrate can be suitably used, for example, in the manufacture of glass hard disks, aluminosilicate glass for reinforced glass substrates, glass ceramic substrates (crystallized glass substrates), synthetic quartz glass substrates (photomask substrates), and the like.Type: ApplicationFiled: December 21, 2006Publication date: June 28, 2007Inventors: Kazuhiko Nishimoto, Yasuhiro Yoneda, Mami Shirota
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Publication number: 20070084828Abstract: A polishing composition for a semiconductor substrate comprising dihydroxyethylglycine, ceria particles, a dispersant, and an aqueous medium, wherein the ceria particles are contained in an amount of from 2 to 22% by weight of the polishing composition, and the dispersant is contained in an amount of from 0.001 to 1.0% by weight of the polishing composition; a polishing process of a semiconductor substrate with the polishing composition for a semiconductor substrate; and a method for manufacturing a semiconductor device including the step of polishing a substrate to be polished in accordance with the polishing process. The polishing composition is used, for example, for the steps of subjecting to shallow trench isolation, subjecting an interlayer dielectric to planarization, forming an embedded metal line, forming an embedded capacitor, and the like.Type: ApplicationFiled: October 12, 2006Publication date: April 19, 2007Inventors: Yasuhiro Yoneda, Mami Shirota, Haruki Nojo, Hirofumi Kashihara
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Publication number: 20060113283Abstract: A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a polishing process of a semiconductor substrate, including the step of polishing a semiconductor substrate with a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a method for manufacturing a semiconductor device including the step of polishing a semiconductor substrate having a film formed on its surface, the film containing a silicon atom and having a shape with dents and projections, with a polishing pad pressed against a semiconductor substrate at a polishing load of from 5 to 100 kPa in the presence of a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the groupType: ApplicationFiled: November 1, 2005Publication date: June 1, 2006Inventors: Yasuhiro Yoneda, Mami Shirota
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Publication number: 20050032659Abstract: A stripping agent composition for a resist, containing (A) 0.1 to 10% by weight of an amine; (B) 80 to 99% by weight of an organic solvent having a Hansen's solubility parameter of from 18 to 33 MPa1/2; (C) 0.01 to 3% by weight of a sugar; and (D) 0 to 5% by weight of water; a method for stripping a resist, including the step of stripping the resist with the stripping agent composition; and a method for manufacturing a semiconductor device, including the step of stripping a resist with the stripping agent composition. By using the stripping composition of the present invention, for example, a high-quality IC or LSI semiconductor device circuit, especially a compound semiconductor device circuit can be more economically advantageously manufactured.Type: ApplicationFiled: August 4, 2004Publication date: February 10, 2005Inventor: Mami Shirota
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Patent number: 6713232Abstract: Resist residues, which is formed in a process of forming Al interconnections, are removed through use of a single chemical. A chemical which contains an organic acid or a salt thereof and water and which has a pH below 8 is used as a treatment for removing resist or resist residues. The chemical may be used in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching of an Al interconnection; in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching a hole reaching an Al interconnection in an dielectric layer; in a process in which Cu is exposed on the surface of a semiconductor wafer after dry-etching of a Cu interconnection or etching of an interlayer dielectric film laid on a Cu interconnection; and in a process in which metal material such as W, WN, Ti, or TiN; poly-Si; SiN; and SiO2 are exposed on the surface of a wafer after etching of a metal gate.Type: GrantFiled: December 4, 2000Date of Patent: March 30, 2004Assignee: Kao CorporationInventors: Seiji Muranaka, Itaru Kanno, Mami Shirota, Junji Kondo
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Publication number: 20020012882Abstract: Resist residues, which is formed in a process of forming Al interconnections, are removed through use of a single chemical. A chemical which contains an organic acid or a salt thereof and water and which has a pH below 8 is used as a treatment for removing resist or resist residues. The chemical may be used in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching of an Al interconnection; in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching a hole reaching an Al interconnection in an dielectric layer; in a process in which Cu is exposed on the surface of a semiconductor wafer after dry-etching of a Cu interconnection or etching of an interlayer dielectric film laid on a Cu interconnection; and in a process in which metal material such as W, WN, Ti, or TiN; poly-Si; SiN; and SiO2 are exposed on the surface of a wafer after etching of a metal gate.Type: ApplicationFiled: December 4, 2000Publication date: January 31, 2002Applicant: Mitsubishi Denki Kabushiki Kaisha and Kao CorporationInventors: Seiji Muranaka, Itaru Kanno, Mami Shirota, Junji Kondo
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Patent number: 6310020Abstract: A stripping composition for a resist comprising a polycarboxylic acid and/or a salt thereof, and water, wherein a pH of the stripping composition is less than 8; and a stripping composition for a resist comprising 0.01 to 90% by weight of an organic acid and/or a salt thereof, 2 to 74% by weight of water, and 0.5 to 90% by weight of an organic solvent, wherein a pH of the stripping composition is less than 8; and a method of stripping a resist from a substrate, comprising applying one of the stripping composition to the substrate.Type: GrantFiled: October 25, 1999Date of Patent: October 30, 2001Assignee: Kao CorporationInventors: Mami Shirota, Kozo Kitazawa, Eiji Kashihara, Eiji Nagoshi