Abstract: Alginate lyase activity is exhibited by the amino acid sequences (polypeptides) shown in SEQ ID No:1 and SEQ ID No:2. These polypeptides and their homology equivalents are used to produce 4-deoxy-L-erythro-5-hexoseulose uronic acid (DEH) by contacting the polypeptide(s) with an alginate containing a uronic acid moiety and holding the mixture of the alginate and the polypeptide(s) at a temperature at which alginate lyase activity is exhibited.

Abstract: Alginate lyase activity is exhibited by the amino acid sequences (polypeptides) shown in SEQ ID No:1 and SEQ ID No:2. These polypeptides and their homology equivalents are used to produce 4-deoxy-L-erythro-5-hexoseulose uronic acid (DEH) by contacting the polypeptide(s) with an alginate containing a uronic acid moiety and holding the mixture of the alginate and the polypeptide(s) at a temperature at which alginate lyase activity is exhibited.

Abstract: The present invention has for its subject to obtain a composition for preventing cancer efficient for preventing cancer or preventing cancer recurred after its therapy, or to obtain a pharmaceutical product, food and drink, and cosmetic having a function for preventing cancer. The present inventors found that a composition containing coenzyme Q has a cancer-preventive effect.

Abstract: The present invention is built on a time out control apparatus to control the time out when a packet is transferred between terminal units connected to different buses. In the time out control apparatus, delay measuring means measures the delay time required for a response packet to be received after a request packet is sent to a terminal unit (control unit) connected via a bus. Delay information list generating means generates a delay information list in which the delay times measured by the delay measuring means are related to the individual identification information on the respective terminal units. Information output means reads out the delay time from the delay information list in accordance with a request from the terminal unit and outputs the delay time to the terminal unit. This sets the delay time on the time out register of the terminal unit.

Abstract: The present invention is built on a time out control apparatus to control the time out when a packet is transferred between terminal units connected to different buses. In the time out control apparatus, delay measuring means measures the delay time required for a response packet to be received after a request packet is sent to a terminal unit (control unit) connected via a bus. Delay information list generating means generates a delay information list in which the delay times measured by the delay measuring means are related to the individual identification information on the respective terminal units. Information output means reads out the delay time from the delay information list in accordance with a request from the terminal unit and outputs the delay time to the terminal unit. This sets the delay time on the time out register of the terminal unit.

Abstract: The present invention is built on a time out control apparatus to control the time out when a packet is transferred between terminal units connected to different buses. In the time out control apparatus, delay measuring means measures the delay time required for a response packet to be received after a request packet is sent to a terminal unit (control unit) connected via a bus. Delay information list generating means generates a delay information list in which the delay times measured by the delay measuring means are related to the individual identification information on the respective terminal units. Information output means reads out the delay time from the delay information list in accordance with a request from the terminal unit and outputs the delay time to the terminal unit. This sets the delay time on the time out register of the terminal unit.

Abstract: A method of treating a semiconductor substrate, which comprises the steps of subjecting a surface of the semiconductor substrate to an annealing treatment, performing an etching treatment of the surface of the semiconductor substrate under a condition where the semiconductor substrate is substantially prevented from being etched and a precipitate exposed from the surface of the semiconductor substrate is selectively etched away, and forming a monocrystalline film of a semiconductor material constituting the semiconductor substrate on the surface of the semiconductor substrate.

Abstract: A method of treating a semiconductor substrate, which comprises the steps of subjecting a surface of the semiconductor substrate to an annealing treatment, performing an etching treatment of the surface of the semiconductor substrate under a condition where the semiconductor substrate is substantially prevented from being etched and a precipitate exposed from the surface of the semiconductor substrate is selectively etched away, and forming a monocrystalline film of a semiconductor material constituting the semiconductor substrate on the surface of the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate having first and second main surfaces and including a denuded zone, in which an oxygen concentration is lower than that in an inner portion of the semiconductor substrate and which does not include a bulk microdefect, and an intrinsic gettering zone, and element region formed on the first surface of the semiconductor substrate, and an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, and formed directly on at least a portion of the intrinsic gettering region or the denuded zone entirely or partially thinned of the second main surface of the semiconductor substrate.