Abstract: A test kit of the present invention includes an analysis chip and a pipette tip. The pipette tip includes: a first portion coming in contact with an insertion hole hermetic seal when the pipette tip is inserted into a pipette tip insertion portion so as to allow a liquid dispensation port to be positioned at or in the vicinity of a bottom surface of the pipette tip insertion portion; and a second portion positioned closer to the liquid dispensation port side than the first portion. The outer diameter of the second portion is formed to be equal to or greater than the outer diameter of the first portion and any portion between the first portion and the second portion.

Abstract: Supplying a liquid to a detection chip including a housing having an opening portion and internally housing the liquid and including an elastic sheet covering the opening portion and having a penetrating portion providing communicating between the inside and the outside of the housing, specifically by inserting a liquid delivery nozzle to the housing via the penetrating portion and supplying the liquid into the housing in a state where the nozzle is in contact with the elastic sheet so as to close the penetrating portion. The penetrating portion is one of a hole and a notch. One of the maximum length of the opening of the hole and the maximum length of the notch is smaller than the outer diameter of the nozzle at a portion coming in contact with the elastic sheet when the nozzle is inserted to close the penetrating portion when a liquid is supplied into the housing.

Abstract: A test kit of the present invention includes an analysis chip and a pipette tip. The pipette tip includes: a first portion coming in contact with an insertion hole hermetic seal when the pipette tip is inserted into a pipette tip insertion portion so as to allow a liquid dispensation port to be positioned at or in the vicinity of a bottom surface of the pipette tip insertion portion; and a second portion positioned closer to the liquid dispensation port side than the first portion. The outer diameter of the second portion is formed to be equal to or greater than the outer diameter of the first portion and any portion between the first portion and the second portion.

Abstract: Supplying a liquid to a detection chip including a housing having an opening portion and internally housing the liquid and including an elastic sheet covering the opening portion and having a penetrating portion providing communicating between the inside and the outside of the housing, specifically by inserting a liquid delivery nozzle to the housing via the penetrating portion and supplying the liquid into the housing in a state where the nozzle is in contact with the elastic sheet so as to close the penetrating portion. The penetrating portion is one of a hole and a notch. One of the maximum length of the opening of the hole and the maximum length of the notch is smaller than the outer diameter of the nozzle at a portion coming in contact with the elastic sheet when the nozzle is inserted to close the penetrating portion when a liquid is supplied into the housing.

Abstract: A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern.

Abstract: A device pattern of a semiconductor device. The pattern is defined by a plurality of non-straight lines that are inwardly arched and are formed from plural segments of plural ellipses that are arranged to surround the pattern.

Abstract: A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern.

Abstract: A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern.

Abstract: A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern.

Abstract: A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern.

Abstract: A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern.