Abstract: It is an object of the present invention to provide a vapor deposition method and apparatus which can supply gases onto a substrate fully stably with a favorable reproducibility, thus making it possible to reliably form a film having a favorable characteristic onto the substrate. A CVD apparatus 1 is one in which gas supply sources 31 to 34 are connected to a chamber 2 by way of gas supply pipes 51 to 54 equipped with MFCs 41 to 44 and valves 56 to 59. Also, bypass lines 71 to 74 joined to an exhaust pipe 4 are connected to parts 61 to 64 of the gas supply pipes 51 to 54. The bypass lines 71 to 74 are provided with valves 76 to 79. When the valves 76 to 79 and the valves 56 to 59 are opened/closed alternately from each other, the flow paths for each material gas can be switched over. The vapor deposition method in accordance with the present invention stabilizes the respective flow rates of material gases by such a valve operation, and then introduces these gases into the chamber 2.

Abstract: A cleaning method for a CVD apparatus which forms films on wafers by introducing film forming gas into a chamber by means of a shower head. In this method, the NF3 gas, which forms the cleaning gas including a compound containing fluorine atoms, is activated by exposure to microwaves by a microwave generating source, and then introduced into the chamber. The temperature of the lid section is raised by heating the lid section by means of a heater plate, or halting supply of cooling water to the lid section from the water supply source, whereby the temperature of the shower head during cleaning is raised above the temperature at which film formation onto the wafer is performed.