Patents by Inventor Mammoud Dahimene

Mammoud Dahimene has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Oxygen free plasma stripping process
    Patent number: 6281135
    Abstract: A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles, The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.
    Type: Grant
    Filed: August 5, 1999
    Date of Patent: August 28, 2001
    Assignee: Axcelis Technologies, Inc.
    Inventors: Qingyuan Han, Ivan Berry, Palani Sakthivel, Ricky Ruffin, Mammoud Dahimene