Patents by Inventor Mamoru Arimoto
Mamoru Arimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11114577Abstract: This photovoltaic power generation device is provided with: a mounting bracket which is fixed to a roof and on which a frame, arranged on the ridge-side end of a solar cell module, and a frame, arranged on the eave-side end of a solar cell module, are mounted; and a fixing bracket which is arranged in the space between the frame and the frame, and which is fixed to the mounting bracket and holds said frames from above.Type: GrantFiled: March 22, 2019Date of Patent: September 7, 2021Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Koichi Kubo, Tomohide Yoshida, Mamoru Arimoto, Naofumi Hayashi, Minoru Higuchi
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Publication number: 20190221696Abstract: This photovoltaic power generation device is provided with: a mounting bracket which is fixed to a roof and on which a frame, arranged on the ridge-side end of a solar cell module, and a frame, arranged on the eave-side end of a solar cell module, are mounted; and a fixing bracket which is arranged in the space between the frame and the frame, and which is fixed to the mounting bracket and holds said frames from above.Type: ApplicationFiled: March 22, 2019Publication date: July 18, 2019Applicant: Panasonic Intellectual Property Management Co., Ltd.Inventors: Koichi Kubo, Tomohide Yoshida, Mamoru Arimoto, Naofumi Hayashi, Minoru Higuchi
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Patent number: 9800200Abstract: This solar cell apparatus is provided with: a long mounting frame having a guide rail section in an upper portion; and a fixing member, which is provided by being slid and moved in the longitudinal direction of the mounting frame, and which is fixed at a predetermined position of the mounting frame. The fixing member has: a base section that engages with the guide rail section; an upright wall section that is provided to stand on the base section; and insertion sections that extend from the upright wall section such that the insertion sections are inserted into a module frame of an eave-side solar cell module and a module frame of a ridge-side solar cell module.Type: GrantFiled: September 28, 2016Date of Patent: October 24, 2017Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Minoru Higuchi, Yutaka Arai, Mamoru Arimoto, Ryo Goto, Koichi Kubo, Yoshihide Kawashita
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Patent number: 9780241Abstract: A solar cell includes a semiconductor substrate of first conductivity type, including first and second principal surfaces; a region of the first conductivity type, including a semiconductor layer structure of the first conductivity type provided on the first principal surface; and a region of an second conductivity type, including a semiconductor layer structure of the second conductivity type provided on the first principal surface. The semiconductor layer structure of the first conductivity type is formed extending into the region of the second conductivity type. Thereby the solar cell is provided with a stack region where the semiconductor layer structure of the second conductivity type is formed on the semiconductor layer structure of the first conductivity type.Type: GrantFiled: September 23, 2014Date of Patent: October 3, 2017Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Mamoru Arimoto, Tsuyoshi Takahama, Naofumi Hayashi
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Patent number: 9627557Abstract: The solar cell (1) of the present invention is provided with an n-side electrode (14), a p-side electrode (15), and a photoelectric conversion unit (20) having a first main surface (20a) and a second main surface (20b). The first main surface (20a) includes an n-type surface (20an) and a p-type surface (20ap). The photoelectric conversion unit (20) has a semiconductor substrate (10) and a semiconductor layer (12n). The semiconductor substrate (10) has first and second main surfaces (10b, 10a). The semiconductor layer (12n) is arranged on a portion of the first main surface (10b). The semiconductor layer (12n) constitutes either the n-type surface (20an) or the p-type surface (20ap). The semiconductor layer (12n) includes a relatively thick portion (12n1) and a relative thin portion (12n2). The n-side electrode (14) or the p-side electrode (15) is arranged on at least the relatively thin portion (12n2) of the semiconductor layer (12n).Type: GrantFiled: September 23, 2013Date of Patent: April 18, 2017Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Mamoru Arimoto, Yasuko Hirayama, Takahiro Mishima, Kazunori Fujita
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Publication number: 20170019059Abstract: This solar cell apparatus is provided with: a long mounting frame having a guide rail section in an upper portion; and a fixing member, which is provided by being slid and moved in the longitudinal direction of the mounting frame, and which is fixed at a predetermined position of the mounting frame. The fixing member has: a base section that engages with the guide rail section; an upright wall section that is provided to stand on the base section; and insertion sections that extend from the upright wall section such that the insertion sections are inserted into a module frame of an eave-side solar cell module and a module frame of a ridge-side solar cell module.Type: ApplicationFiled: September 28, 2016Publication date: January 19, 2017Applicant: Panasonic Intellectual Property Management Co., Ltd.Inventors: Minoru Higuchi, Yutaka Arai, Mamoru Arimoto, Ryo Goto, Koichi Kubo, Yoshihide Kawashita
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Publication number: 20150083214Abstract: A solar cell includes a semiconductor substrate of first conductivity type, including first and second principal surfaces; a region of the first conductivity type, including a semiconductor layer structure of the first conductivity type provided on the first principal surface; and a region of an second conductivity type, including a semiconductor layer structure of the second conductivity type provided on the first principal surface. The semiconductor layer structure of the first conductivity type is formed extending into the region of the second conductivity type. Thereby the solar cell is provided with a stack region where the semiconductor layer structure of the second conductivity type is formed on the semiconductor layer structure of the first conductivity type.Type: ApplicationFiled: September 23, 2014Publication date: March 26, 2015Inventors: Mamoru ARIMOTO, Tsuyoshi TAKAHAMA, Naofumi HAYASHI
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Publication number: 20140130862Abstract: Provided is a solar cell with improved photoelectric conversion efficiency. A second busbar portion (15n) is arranged continuously across a first finger portion (14p) and a second finger portion (14n). The solar cell (1) is further provided with a first insulating layer (27). The first insulating layer (27) insulates the first finger portion (14p) and the second busbar portion (15n).Type: ApplicationFiled: January 21, 2014Publication date: May 15, 2014Applicant: Sanyo Electric Co., Ltd.Inventor: Mamoru Arimoto
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Publication number: 20140020754Abstract: The solar cell (1) of the present invention is provided with an n-side electrode (14), a p-side electrode (15), and a photoelectric conversion unit (20) having a first main surface (20a) and a second main surface (20b). The first main surface (20a) includes an n-type surface (20an) and a p-type surface (20ap). The photoelectric conversion unit (20) has a semiconductor substrate (10) and a semiconductor layer (12n). The semiconductor substrate (10) has first and second main surfaces (10b, 10a). The semiconductor layer (12n) is arranged on a portion of the first main surface (10b). The semiconductor layer (12n) constitutes either the n-type surface (20an) or the p-type surface (20ap). The semiconductor layer (12n) includes a relatively thick portion (12n1) and a relative thin portion (12n2). The n-side electrode (14) or the p-side electrode (15) is arranged on at least the relatively thin portion (12n2) of the semiconductor layer (12n).Type: ApplicationFiled: September 23, 2013Publication date: January 23, 2014Applicant: Sanyo Electric Co., Ltd.Inventors: Mamoru Arimoto, Yasuko Hirayama, Takahiro Mishima, Kazunori Fujita
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Publication number: 20140020752Abstract: A photoelectric converter (10) is provided with an n-type monocrystalline silicon substrate (21), an IN layer (25) and an IP layer (26) formed on the rear surface (12) of the n-type monocrystalline silicon substrate (21), an n-side electrode (40) electrically connected to the IN layer (25), and a p-side electrode (50) separated from the n-side electrode (40) by means of a separation groove (6) and electrically connected to the IP layer (26). In said photoelectric converter (10), a texture structure is formed on at least a portion of a region in which the n-type monocrystalline silicon substrate (21), the IN layer (25) and the IP layer (26) are formed to be in direct contact with one another.Type: ApplicationFiled: September 20, 2013Publication date: January 23, 2014Applicant: SANYO Electric Co., Ltd.Inventors: Mamoru ARIMOTO, Masato SHIGEMATSU, Hitoshi SAKATA
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Patent number: 7952121Abstract: An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.Type: GrantFiled: August 25, 2008Date of Patent: May 31, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Mamoru Arimoto, Hayato Nakashima, Kaori Misawa, Ryu Shimizu
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Publication number: 20100270594Abstract: An image sensor according to the present invention includes a second conductivity type first impurity region provided on a surface of a first conductivity type semiconductor substrate for constituting a transfer channel for signal charges, a charge increasing portion provided on the first impurity region for increasing the amount of signal charges by impact ionization, an increasing electrode provided on the side of the surface of the semiconductor substrate for applying a voltage to the charge increasing portion, and a second conductivity type second impurity region opposed to the first impurity region through a prescribed region of the semiconductor substrate and suppliable with charges.Type: ApplicationFiled: March 12, 2010Publication date: October 28, 2010Applicant: Sanyo Electric Co., Ltd.Inventors: Ryu Shimizu, Mamoru Arimoto
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Publication number: 20100194960Abstract: This charge increaser includes a charge supplying portion having a signal source formed by a measurement object other than visible light and supplying signal charges corresponding to the signal source and a charge increasing portion for increasing the amount of charges corresponding to the signal charges stored in the charge supplying portion by measuring the measurement object other than visible light.Type: ApplicationFiled: February 1, 2010Publication date: August 5, 2010Applicant: Sanyo Electric Co., Ltd.Inventors: Hayato Nakashima, Mamoru Arimoto, Ryu Shimizu, Kaori Misawa
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Publication number: 20100013975Abstract: This image sensor includes a charge transfer region transferring signal charge, a transfer electrode formed on the surface of the charge transfer region through a first insulating film, an increasing portion provided on the charge transfer region for increasing the signal charge and a transistor, provided on a region other than the charge transfer region, having a second insulating film smaller in thickness than the first insulating film.Type: ApplicationFiled: July 13, 2009Publication date: January 21, 2010Applicant: Sanyo Electric Co., Ltd.Inventors: Hayato Nakashima, Ryu Shimizu, Mamoru Arimoto, Kaori Misawa
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Publication number: 20090315086Abstract: An image sensor includes a first electrode for applying a voltage to a charge storage portion, a second electrode for applying a voltage to a charge increasing portion, a third electrode provided between the first electrode and the second electrode and an impurity region of a first conductive type for forming a path through which the signal charges are transferred, wherein an impurity concentration of a region of the impurity region corresponding to a portion located under the second electrode is higher than an impurity concentration of a region of the impurity region corresponding to a portion located under the third electrode.Type: ApplicationFiled: June 17, 2009Publication date: December 24, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Mamoru Arimoto, Kaori Misawa, Hayato Nakashima, Ryu Shimizu
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Publication number: 20090316032Abstract: An image sensor includes an increase portion for impact-ionizing and increasing signal charges, a charge increasing electrode for applying a voltage increasing the signal charges to the increase portion and an insulating film provided between the charge increasing electrode and the increase portion, wherein the insulating film includes a first insulating film made of a thermal oxide film and a second insulating film made of an oxide film, formed on the first insulating film.Type: ApplicationFiled: June 5, 2009Publication date: December 24, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Kaori Misawa, Mamoru Arimoto, Hayato Nakashima, Ryu Shimizu
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Publication number: 20090268031Abstract: An electric device enabling the user to visually judge the section of present and amount of a substance absorbing or reflecting ultraviolet radiation. The electric device comprises an image detecting portion (6, 66, 127, 149) for receiving ultraviolet radiation and detecting an image from the received ultraviolet radiation and a display section (2, 32, 42, 52, 62, 82, 92, 102, 126, 147, 172) for displaying ultraviolet radiation information created from the image formed by the detected ultraviolet radiation by the image detecting portion.Type: ApplicationFiled: September 13, 2006Publication date: October 29, 2009Inventors: Kazunari Honma, Mamoru Arimoto, Hitoshi Hirano, Satoru Shimada
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Publication number: 20090152605Abstract: An image sensor includes a carrier generating portion having a photoelectric conversion function, a voltage conversion portion for converting signal charges to a voltage, a charge increasing portion for increasing carriers generated by the carrier generating portion and a light shielding film formed to cover at least one part of the charge increasing portion.Type: ApplicationFiled: December 18, 2008Publication date: June 18, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Toshikazu Ohno, Yugo Nose, Ryu Shimizu, Mamoru Arimoto, Tatsushi Ohyama
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Publication number: 20090144354Abstract: An imaging device that improves properties for multiplying signal charges. The imaging device includes an accumulation section which accumulates signal charges. A transfer section transfers the signal charges accumulated in the accumulation section. A multiplier section increases the signal charges accumulated in the accumulation section. The transfer section includes a first insulating member arranged on a substrate and a first electrode arranged on the first insulating member. The multiplier section includes a second insulating member arranged on the substrate and a second electrode arranged on the second insulating member. The second insulating member has a thickness which is greater than that of the first insulating member.Type: ApplicationFiled: November 26, 2008Publication date: June 4, 2009Applicant: Sanyo Electric Co., LtdInventors: Kaori Misawa, Ryu Shimizu, Mamoru Arimoto, Hayato Nakashima
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Publication number: 20090134438Abstract: A CMOS image sensor includes an impurity region provided under at least the first electrode, the second electrode and the third electrode for forming a path through which the signal charges transfer, wherein the impurity concentration of a region of the impurity region corresponding to a portion located under the first electrode is higher than the impurity concentration of a region of the impurity region corresponding to each of portions located under at least the second electrode and the third electrode.Type: ApplicationFiled: November 24, 2008Publication date: May 28, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Mamoru Arimoto, Ryu Shimizu, Hayato Nakashima, Kaori Misawa