Abstract: The adhesiveness of a treatment target made of a fluorine-based hard-to-adhere material is improved. A process gas containing any one or two or more among carbon monoxide, carbon dioxide, hydrogen, water vapor, ethanol, propanol, hexanol, ethylene glycol, and ammonia is supplied from a process gas supply unit 10 to a plasma generation unit 20. In the plasma generation unit 20, the process gas is activated by plasma and is brought into contact with a treatment target 9, and through a reaction caused by the contact, the residual ratio of fluorine atoms on a surface of the treatment target 9 is adjusted to 60% or less of that before the contact, and any one among a carbon atom, a hydrogen atom, and an oxygen atom, or a molecule containing one or more of these atoms is provided to the surface of the treatment target.

Abstract: The combine may include a threshing tank that is configured to store a threshing product obtained by the threshing device and includes a lower tapered portion formed in a bottom portion. A bottom screw is provided inside the lower tapered portion and configured to discharge the threshing product from the threshing tank. A threshing discharge device is connected to the bottom screw and configured to convey the threshing product from the bottom screw and discharge the threshing product in a body outward direction. The threshing tank includes an inspection port formed in a bottom section of the lower tapered portion, and a lid configured to open and close the inspection port, and the lid opens and closes by swinging upward and downward about a swing axis that is not parallel with a screw axis of the bottom screw.

Abstract: It is an objective of the present invention to suppress or prevent damages to a metal layer when a surface of a substrate having an easily oxidizable metal layer formed therein is dry-processed and subsequently wet-cleaned. In a dry-processing part 10, a reducing gaseous fluid containing a reducing component is brought into contact with an easily oxidizable metal layer 93 on a surface of a workpiece substrate 90 and the reducing gaseous fluid is activated generally concurrently with the contacting. Subsequently, the workpiece substrate 90 is moved on to a wet-cleaning part 20 and cleaned with cleaning liquid 29.

Abstract: The plasma processing apparatus M2 has a first and a second elongate electrodes 30, 30. A processing gas is introduced from a first aperture 30b formed between upper first edges of the electrodes 30, 30 into a gap 30a between the electrodes 30, 30. An electric field is applied and a plasma is generated between the electrodes 30, 30. The processing gas is blown-off from the gap 30a through a second aperture 30c formed between lower second edges of the electrodes 30, 30. A first side surface on the first edge of the first electrode 30 is covered by an insulative cover 22 including a cover main body 22A and a plasma-proof member 26 which is formed of an insulative material which is higher in plasma-proof property than the cover main body 22A. The plasma-proof member 26 forms a processing gas introducing hole which is continuous with the first aperture 30b. The plasma-proof member 26 is contacted with the first side surface.

Abstract: A conductive member 51 is disposed on the side facing to an object W relative to an electrode structure 30 in a plasma processing apparatus. The conductive member 51 is electrically grounded. An insulator 45 is interlaid between the electrode structure 30 and the conductive member 51. The insulator 45 is divided into a first insulation part 41 and a second insulation part 42. The first insulation part 41 forms a lead-out path 40a connected to the downstream of said plasmatizing space 30a between electrodes. The second insulation part 42 is separately disposed on the side opposite to the lead-out passage 40a side relative to the first insulation part 41. The first and second insulation parts 41, 42 can be separated from each other. If the first insulation part 41 is damaged, only the first insulation part 41 may simply be replaced. There is no need of replacing whole of the insulator 45.

Abstract: The plasma processing apparatus M2 has a first and a second elongate electrodes 30, 30. A processing gas is introduced from a first aperture formed between upper first edges of the electrodes 30, 30 into a gap 30a between the electrodes 30, 30. An electric field is applied and a plasma is generated between the electrodes 30, 30. The processing gas is blown-off from the gap 30a through a second aperture formed between lower second edges of the electrodes 30, 30. An insulative spacer 60 is disposed in the gap 30a so as to be interposed between the electrodes 30, 30 substantially at an intermediate section in the longitudinal direction of the electrodes 30, 30. The spacer 60 prevents the electrodes 30, 30 from being deformed to narrow the gap 30a between the electrodes 30, 30 due to the Coulomb force, etc.

Abstract: A plasma processing apparatus M1 is provided with a processing part 20 for supporting a pair of elongate electrodes 30. The processing part 20 is provided with a plurality of pull bolts 52 (approach-deforming preventers) mutually spacedly arranged in the longitudinal direction of the electrode 30. A head part of each pull bolt 52 is hooked on a rigid plate 33 through a bolt holder 53, and a leg part thereof is screwed in the electrode 30. Owing to this arrangement, the electrodes 30 can be prevented from being deformed by Coulomb's force.

Abstract: A plasma processing apparatus M1 is provided with a processing part 20 for supporting a pair of elongate electrodes 30. The processing part 20 is provided with a plurality of pull bolts 52 (approach-deforming preventers) mutually spacedly arranged in the longitudinal direction of the electrode 30. A head part of each pull bolt 52 is hooked on a rigid plate 33 through a bolt holder 53, and a leg part thereof is screwed in the electrode 30. Owing to this arrangement, the electrodes 30 can be prevented from being deformed by Coulomb's force.

Abstract: A plasma processing apparatus is provided on the side to be directed to a workpiece W of electrodes 31, 32 with a conductive member 51 through an insulating member 41. The insulating member 41 is sandwiched between the electrodes 31, 32 and the conductive member 51. The dielectric constant and the thickness of the insulating member 41 are established such that the voltage applied to a gap 40b formed between the insulating member 41 and the conductive member 51 becomes smaller than the sparking voltage. Owing to this arrangement, electrical discharge can be prevented from occurring in the gap 40b and thus, the processing quality can be enhanced.

Abstract: A plasma processing apparatus M1 is provided with a processing part 20 for supporting a pair of elongate electrodes 30. The processing part 20 is provided with a plurality of pull bolts 52 (approach-deforming preventers) mutually spacedly arranged in the longitudinal direction of the electrode 30. A head part of each pull bolt 52 is hooked on a rigid plate 33 through a bolt holder 53, and a leg part thereof is screwed in the electrode 30. Owing to this arrangement, the electrodes 30 can be prevented from being deformed by Coulomb's force.

Abstract: A composition for antistatic hard coats which comprises 100 parts by weight of a polyfunctuinal acrylate and, compounded therewith, 50 to 400 parts by weight of fine conductive particles having a particle diameter of 10 to 30 nm and 10 to 80 parts by weight of at least one silicon compound selected from the group consisting of silica particles surface-treated with an organic substance, organopolysiloxanes, and silicon acrylate; an antistatic hard coat which is formed by curing the composition; a multilayerd film which comprises a base film and formed thereon the antistatic hard coat; and a process for producing an antistatic hard coat which comprises applying the composition to a base film, drying and curing the composition to form an antistatic hard coat, and subjecting the hard coat to either a physical treatment in which the hard coat is treated with, e.g.