Patents by Inventor Mamoru Imade

Mamoru Imade has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10910511
    Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: February 2, 2021
    Assignees: OSAKA UNIVERSITY, DISCO CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masayuki Imanishi, Hiroshi Morikazu, Shin Tabata, Takumi Shotokuji
  • Patent number: 10309036
    Abstract: A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm?3 in a crystal near the principal surface over an entire in-plane region thereof.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: June 4, 2019
    Assignees: OSAKA UNIVERSITY, SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masatomo Shibata, Takehiro Yoshida
  • Patent number: 10266965
    Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.
    Type: Grant
    Filed: February 26, 2015
    Date of Patent: April 23, 2019
    Assignees: Osaka University, Itochu Plastics Inc.
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masashi Isemura, Akira Usui, Masatomo Shibata, Takehiro Yoshida
  • Patent number: 10260165
    Abstract: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: April 16, 2019
    Assignees: Osaka University, Sciocs Company Limited, Sumitomo Chemical Company, Limited
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masayuki Imanishi, Masatomo Shibata, Takehiro Yoshida
  • Publication number: 20190088816
    Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 21, 2019
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masayuki Imanishi, Hiroshi Morikazu, Shin Tabata, Takumi Shotokuji
  • Patent number: 10202710
    Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: February 12, 2019
    Assignees: Osaka University, Itochu Plastics Inc., Panasonic Corporation
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masashi Isemura, Yoshio Okayama
  • Patent number: 10145022
    Abstract: A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw ma
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: December 4, 2018
    Assignees: Osaka University, Panasonic Corporation
    Inventors: Yusuke Mori, Mamoru Imade, Shinsuke Komatsu, Michirou Yoshino
  • Patent number: 10059590
    Abstract: A method and apparatus for producing a Group III nitride in which the thermal decomposition of the nitrogen element-containing gas is suppressed to enhance the productivity. The method for producing a Group III nitride crystal, comprising: reacting an oxide or a metal of a Group III element under a heated atmosphere to form a compound gas of the Group III element; mixing a nitrogen element-containing gas at a temperature that is lower than that of the compound gas, with the compound gas; and reacting the nitrogen element-containing gas with the compound gas to form a Group III nitride crystal.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: August 28, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Yusuke Mori, Mamoru Imade, Tomio Yamashita, Ryo Kuwabara, Yoshio Okayama
  • Patent number: 10026612
    Abstract: The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.
    Type: Grant
    Filed: October 8, 2014
    Date of Patent: July 17, 2018
    Assignees: Osaka University, Itochu Plastics Inc.
    Inventors: Yusuke Mori, Mamoru Imade, Masashi Yoshimura, Masashi Isemura
  • Patent number: 10011921
    Abstract: To provide a method for producing a Group III element nitride crystal by growing it on a plane on the ?c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: July 3, 2018
    Assignees: Osaka University, Itochu Plastics Inc., National University Corporation Tokyo University of Agriculture and Technology
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masashi Isemura, Akinori Koukitu
  • Publication number: 20180094361
    Abstract: The present invention provides a method for producing a Group III nitride crystal that can produce a Group III nitride crystal of high quality with few defects such as crack, dislocation, and the like by vapor phase epitaxy. In order to achieve the above object, the method for producing a Group III nitride crystal of the present invention includes a step of: causing Group III element-containing gas 111a to react with nitrogen-containing gas 203a and 203b to generate a Group III nitride crystal 204, wherein in the Group III nitride crystal generation step, the reaction is performed in the presence of a carbon-containing substance.
    Type: Application
    Filed: October 4, 2017
    Publication date: April 5, 2018
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Mamoru IMADE, Masayuki IMANISHI, Akira KITAMOTO, Masashi ISEMURA
  • Publication number: 20180038010
    Abstract: A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm?3 in a crystal near the principal surface over an entire in-plane region thereof.
    Type: Application
    Filed: February 18, 2016
    Publication date: February 8, 2018
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Mamoru IMADE, Masatomo SHIBATA, Takehiro YOSHIDA
  • Publication number: 20170362735
    Abstract: A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw ma
    Type: Application
    Filed: June 14, 2017
    Publication date: December 21, 2017
    Inventors: Yusuke MORI, Mamoru IMADE, Shinsuke KOMATSU, Michirou YOSHINO
  • Patent number: 9834859
    Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: December 5, 2017
    Assignee: OSAKA UNIVERSITY
    Inventors: Yusuke Mori, Mamoru Imade, Masashi Yoshimura, Mihoko Hirao, Masayuki Imanishi
  • Publication number: 20170321348
    Abstract: To provide a method for producing a Group III element nitride crystal by growing it on a plane on the ?c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12.
    Type: Application
    Filed: October 28, 2015
    Publication date: November 9, 2017
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Mamoru IMADE, Masashi ISEMURA, Akinori KOUKITU
  • Publication number: 20170314157
    Abstract: A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10?5 ?; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.
    Type: Application
    Filed: May 2, 2017
    Publication date: November 2, 2017
    Applicants: OSAKA UNIVERSITY, SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Mamoru IMADE, Masayuki IMANISHI, Masatomo SHIBATA, Takehiro YOSHIDA
  • Publication number: 20170191186
    Abstract: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.
    Type: Application
    Filed: January 4, 2017
    Publication date: July 6, 2017
    Applicants: OSAKA UNIVERSITY, SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Mamoru IMADE, Masayuki IMANISHI, Masatomo SHIBATA, Takehiro YOSHIDA
  • Publication number: 20170073839
    Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.
    Type: Application
    Filed: February 26, 2015
    Publication date: March 16, 2017
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Mamoru IMADE, Masashi ISEMURA, Akira USUI, Masatomo SHIBATA, Takehiro YOSHIDA
  • Publication number: 20170073840
    Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas.
    Type: Application
    Filed: March 3, 2015
    Publication date: March 16, 2017
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Mamoru IMADE, Masashi ISEMURA, Yoshio OKAYAMA
  • Publication number: 20160268129
    Abstract: The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.
    Type: Application
    Filed: October 8, 2014
    Publication date: September 15, 2016
    Applicants: OSAKA UNIVERSITY, ITOCHU PLASTICS INC.
    Inventors: Yusuke MORI, Mamoru IMADE, Masashi YOSHIMURA, Masashi ISEMURA