Abstract: A gate array type semiconductor device has a plurality of basic array block cells. The basic array block cells are made up of at least one basic cell and only one input/output cell. Additionally, the basic array block cells are arranged in a matrix form on a mother wafer. The number of the basic cells in each basic array block cell is determined by a gate scale requirement but the number of input/output cells remain one. Different pellet sizes may be provided on the same mother wafer. This enables to produce various kinds of gate arrays in a short turn around time and a low cost.

Abstract: A semiconductor chip 1 is fixedly adhered to an island 2 of a lead frame with a die bonding material 4. The electrode pad positioned at an upper surface of the semiconductor chip 1 and a lead 3 of the lead frame are interconnected with a bonding wire 5. To the semiconductor chip 1, a heat spreader 6 is adhered with an insulating adhesive agent 7. The semiconductor chip 1, the island 2, an inner lead portion 3a of lead 3, the bonding wire 5 and the heat spreader 6 are sealed with sealing resin 8. Since, after completion of the die bonding and wire bonding processes, the heat spreader 6 is adhered to the chip 1, a high temperature die bonding and a high temperature wire bonding become possible without taking the thermal characteristics of the adhesive agent into account.