Abstract: A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

Abstract: A lightening apparatus includes light-emitting elements arranged in a matrix. One of the light-emitting elements is located at each intersection between at least two first reference voltage lines and “m” first drive voltage lines. A first reference voltage driver time-divisionally switches the first reference voltage lines. A first drive voltage driver supplies first luminous drive voltages to the first drive voltage lines. One of the light-emitting elements is located at each intersection between at least one second reference voltage line and “m” second drive voltage lines. A second reference voltage driver switches the second reference voltage line. A second drive voltage driver supplies second luminous drive voltages to the second drive voltage lines.

Abstract: A method of manufacturing a semiconductor element includes forming a first bonding layer containing a metal, which forms a eutectic crystal with Au, on a first substrate to provide a first laminated body. The method also includes forming an element structure layer having a semiconductor layer on a second substrate. The method also includes forming a second bonding layer on the element structure layer to provide a second laminated body. The second bonding layer has a metal underlayer containing a metal, which forms a eutectic crystal with Au. The second bonding layer also has a surface layer that contains Au. The method also includes performing heating pressure-bonding on the first and second laminated bodies with the first and second bonding layers facing each other. The heating temperature of the second substrate in the heating pressure-bonding is higher than the heating temperature of the first substrate.

Abstract: A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations.

Abstract: A semiconductor light emitting element has a cross-sectional structure comprising a support substrate, a semiconductor lamination located over the support substrate, and a joint layer located between the semiconductor lamination and the support substrate, containing a first jointing layer located on the semiconductor lamination side and a second jointing layer located on the support substrate side. In the plan view, the semiconductor lamination has corner portions and side portions along the periphery, the first jointing layer is encompassed by the second jointing layer, the second jointing layer is encompassed by the semiconductor lamination, and an annular region defined between outlines of the semiconductor lamination and of the first jointing layer has first portions corresponding to the corner portions of the semiconductor lamination and second portions corresponding to the side portions of the semiconductor lamination, widths of the first portions being narrower than widths of the second portions.

Abstract: An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode.

Abstract: There is provided a highly reliable semiconductor light emitting element and vehicle lighting unit as well as associated methods. The semiconductor light emitting element can include a support substrate, a semiconductor stacked body including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer. The element can further include a bonding layer configured to bond the support substrate and the semiconductor stacked body, the bonding layer having a side surface that forms an angle exceeding 90° with a surface of the bonding layer on the side of the semiconductor stacked body, and an interconnection layer configured to extend from the upper surface of the semiconductor stacked body to cover the side surface of the bonding layer.

Abstract: A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.

Abstract: A light emitting element in use for an LED array comprises an electrode layer, a semiconductor light emitting layer consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first wiring layer formed along and in parallel to one side of the semiconductor light emitting layer, and a plurality of second wiring layers extending from the first wiring layer to the semiconductor light emitting layer and electrically connected to the n-type semiconductor layer on a surface of the semiconductor light emitting layer, wherein a plane shape of the semiconductor light emitting layer comprises two short sides including a portion inclined from a line perpendicular to a upper and a lower sides, and a vertical line from a vertex where the upper side and the short side meet crosses the lower side of the adjacent light emitting element.

Abstract: A method of manufacturing a semiconductor element includes forming an element structure layer having a semiconductor layer, on a first substrate. The method also includes forming a first bonding layer on the element structure layer. The method also includes forming a second bonding layer on a second substrate. The method also includes performing heating pressure-bonding on the first and second bonding layers, with the first and second bonding layers facing each other. One of the first bonding layer and the second bonding layer is an AU layer, and the other is an AuSn layer. The AuSn layer has a surface layer having an Sn content of between 85 wt % (inclusive) and 95 wt % (inclusive).

Abstract: A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

Abstract: A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.

Abstract: An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode.

Abstract: A light emitting device includes a substrate elongated in a lengthwise direction; a plurality of LED chips disposed on the substrate in an intermediate region in widthwise direction, and aligned along the lengthwise direction at a distance of 80 ?m or less; and interconnection wirings formed on regions outside the intermediate region in the widthwise direction; wherein each of the LED chips has a p-side electrode disposed on the substrate, a p-type semiconductor layer disposed on the p-side electrode, an active layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the active layer, and has a region in which the n-type semiconductor layer, the active layer, and the p-type semiconductor layer are patterned, and an n-side electrode formed selectively on a surface of the n-type semiconductor layer and connected to the p-side electrode of an adjacent LED chip through the interconnection wiring.

Abstract: A light emitting device includes a substrate elongated in a lengthwise direction; a plurality of LED chips disposed on the substrate in an intermediate region in widthwise direction, and aligned along the lengthwise direction at a distance of 80 ?m or less; and interconnection wirings formed on regions outside the intermediate region in the widthwise direction; wherein each of the LED chips has a p-side electrode disposed on the substrate, a p-type semiconductor layer disposed on the p-side electrode, an active layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the active layer, and has a region in which the n-type semiconductor layer, the active layer, and the p-type semiconductor layer are patterned, and an n-side electrode formed selectively on a surface of the n-type semiconductor layer and connected to the p-side electrode of an adjacent LED chip through the interconnection wiring.

Abstract: A semiconductor light emitting element has a cross-sectional structure comprising a support substrate, a semiconductor lamination located over the support substrate, and a joint layer located between the semiconductor lamination and the support substrate, containing a first jointing layer located on the semiconductor lamination side and a second jointing layer located on the support substrate side. In the plan view, the semiconductor lamination has corner portions and side portions along the periphery, the first jointing layer is encompassed by the second jointing layer, the second jointing layer is encompassed by the semiconductor lamination, and an annular region defined between outlines of the semiconductor lamination and of the first jointing layer has first portions corresponding to the corner portions of the semiconductor lamination and second portions corresponding to the side portions of the semiconductor lamination, widths of the first portions being narrower than widths of the second portions.

Abstract: A method of manufacturing a semiconductor element includes forming a first bonding layer containing a metal, which forms a eutectic crystal with Au, on a first substrate to provide a first laminated body. The method also includes forming an element structure layer having a semiconductor layer on a second substrate. The method also includes forming a second bonding layer on the element structure layer to provide a second laminated body. The second bonding layer has a metal underlayer containing a metal, which forms a eutectic crystal with Au. The second bonding layer also has a surface layer that contains Au. The method also includes performing heating pressure-bonding on the first and second laminated bodies with the first and second bonding layers facing each other. The heating temperature of the second substrate in the heating pressure-bonding is higher than the heating temperature of the first substrate.

Abstract: A method of manufacturing a semiconductor element includes forming an element structure layer having a semiconductor layer, on a first substrate. The method also includes forming a first bonding layer on the element structure layer. The method also includes forming a second bonding layer on a second substrate. The method also includes performing heating pressure-bonding on the first and second bonding layers, with the first and second bonding layers facing each other. One of the first bonding layer and the second bonding layer is an AU layer, and the other is an AuSn layer. The AuSn layer has a surface layer having an Sn content of between 85 wt % (inclusive) and 95 wt % (inclusive).

Abstract: A light emitting element in use for an LED array comprises an electrode layer, a semiconductor light emitting layer consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first wiring layer formed along and in parallel to one side of the semiconductor light emitting layer, and a plurality of second wiring layers extending from the first wiring layer to the semiconductor light emitting layer and electrically connected to the n-type semiconductor layer on a surface of the semiconductor light emitting layer, wherein a plane shape of the semiconductor light emitting layer comprises two short sides including a portion inclined from a line perpendicular to a upper and a lower sides, and a vertical line from a vertex where the upper side and the short side meet crosses the lower side of the adjacent light emitting element.

Abstract: A semiconductor light emitting array comprises a plurality of semiconductor light emitting elements disposed on an oblong substrate that is long in a first direction and arranged along with the first direction. Each light emitting element comprises an electrode layer formed on the substrate, a semiconductor light emitting layer formed on the electrode layer, stretched long in the first direction and comprising a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first wiring layer formed along and in parallel to one long side of the semiconductor light emitting layer, and second wiring layers extending to a direction of a short side from the first wiring layer and electrically connected to the n-type semiconductor layer on a surface of the semiconductor light emitting layer. The first wiring layers are disposed on different long sides of the semiconductor light emitting layers in the adjacent light emitting elements.