Abstract: A formalin gas counteracting and deodorizing device which is connected to a sterilization chamber including a main pipeline having an inlet for formalin gas at one end thereof and an outlet for processed gas at the other end, a fan connected to the inlet side midway in the main pipeline, an oxidation means for decomposition, a cooling means all connected in this order from the fan to the outlet, and a branch pipe provided between the oxidation means of the main pipeline and the cooling means. The process includes performing sterilization utilizing the sterilizer for a predetermined period of time, circulating the gas between the main pipeline, and the bypass pipe line for a predetermined period of time using the formalin gas counteracting and deodorizing device just before the end of the sterilization process, then circulating the gas between the sterilization chamber and the main pipeline for counteracting the formalin gas and introducing a counteractive into the sterilization chamber.

Abstract: An ion implantation apparatus comprises a pair of scanning electrodes for statically scanning an ion beam in an X direction; a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction; a scanning power supply including a signal generator for generating a signal with a waveform corresponding to waveform data which is input from an outside and an amplifier for amplifying the signal and for outputting it to the pair of scanning electrodes; a multiple point monitor containing a large number of Faraday cups with same area disposed in the X direction for receiving the ion beam and for measuring the beam current; a monitor drive unit for moving the multiple point monitor to and from a radiation area of the scanned ion beam; and a control unit for obtaining the distribution of the beam current sum being entered into each Faraday cup according to the beam current measured by each Faraday cup of the multiple point monitor, for generating the waveform data so that the

Abstract: In an ion implantation apparatus comprising scanning electrodes for electrically scanning an ion beam in an X direction, a scanning power supply for supplying a scanning power to the scanning electrodes, a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction, a beam current measurement device disposed at one end section of the scanning area of the ion beam for measuring a beam current of the ion beam, and a control unit for computing the scanning speed of the target based on the beam current measured by the beam current measurement device and for controlling the drive unit so that the target is driven at the computed speed, the control unit outputs a trigger signal whenever the computation process of the scanning speed of the target is completed, and the scanning power supply outputs the scanning power for one reciprocative scanning operation of the ion beam at every time the scanning power supply receives the trigger signal from the control unit.

Abstract: An ion implantation apparatus comprises: an implantation chamber into which an ion beam is entered, the ion beam being scanned in an X direction; a holder for holding a wafer in the implantation chamber; and a holder drive unit for mechanically scanning the holder in a Y direction substantially perpendicular to the X direction in the implantation chamber. The holder drive unit swingingly rotates the holder so that the wafer is mechanically scanned in the Y direction.

Abstract: An end station for ion implantation apparatus comprising an ion implantation process unit having a wafer holder and capable of implanting ions in wafers in a high vacuum, and a wafer supply-collection unit for the process unit.