Patents by Inventor Mamoru Tamura
Mamoru Tamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240118620Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A resist underlayer film-forming composition includes a solvent and a polymer having a unit structure represented by formula (I): (in formula (I), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, a methyl group, or an ethyl group, Q1 represents a divalent organic group, R1 represents a tetravalent organic group including a C6-40 aromatic ring structure, and L1 and L2 each independently represent a hydrogen atom or a C1-10 alkyl group optionally substituted with a hydroxy group and optionally interrupted by an oxygen atom).Type: ApplicationFiled: January 26, 2022Publication date: April 11, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Yuki KATO, Tomotada HIROHARA, Mamoru TAMURA
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Publication number: 20240085792Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. (In formula (1), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, methyl group, or ethyl group; Q1 represents a divalent organic group; R1 represents a tetravalent organic group; and R2 represents an alkenyl group or alkynyl group having 2-10 carbon atoms.) The film-forming composition contains a solvent and a polymer that has a unit structure given by formula (1).Type: ApplicationFiled: January 26, 2022Publication date: March 14, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Tomotada HIROHARA, Mamoru TAMURA
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Publication number: 20240004295Abstract: A composition forms a resist underlayer film that enables formation of a desired resist pattern; and a method produces a resist pattern and a method produces a semiconductor device, which each use the resist underlayer film-forming composition. This resist underlayer film-forming composition contains a reaction product obtained from: a compound (A) that is dissolved in a solvent and that is represented by formula (1) (in formula (1), A represents an organic group including an aliphatic ring, an aromatic ring, or a heterocyclic ring); a compound (B) having two functional groups that are reactive with respect to an epoxy group; and a compound (C) having one functional group that is reactive with respect to an epoxy group.Type: ApplicationFiled: October 6, 2021Publication date: January 4, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shou SHIMIZU, Mamoru TAMURA
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Publication number: 20230341777Abstract: A composition for forming a resist underlayer film and a method for producing a resist pattern, the method using the composition for forming a resist underlayer film; and a method for producing a semiconductor device. A resist underlayer film-forming composition which contains an organic solvent and a polymer that has an end blocked with a compound (A), wherein: the polymer is derived from compound (B) that is represented by formula (11). (In formula (11), Y1 represents a single bond, an oxygen atom, a sulfur atom, an alkylene group having from 1 to 10 carbon atoms, the alkylene group being optionally substituted by a halogen atom or an aryl group having from 6 to 40 carbon atoms, or a sulfonyl group; each of T1 and T2 represents an alkyl group having from 1 to 10 carbon atoms; and each of n1 and n2 independently represents an integer from 0 to 4.Type: ApplicationFiled: September 30, 2021Publication date: October 26, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Tomotada HIROHARA, Shou SHIMIZU, Mamoru TAMURA
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Publication number: 20230296984Abstract: A composition for forming a resist underlayer film that enables formation of an intended resist pattern, and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A composition for forming an EUV resist underlayer film includes: a compound represented by formula (1); a polymer; and an organic solvent. (In formula (1), Y1 represents a single bond, an oxygen atom, a sulfur atom, a halogen atom, or a C1-10 alkylene group which may be substituted with a C6-40 aryl group, or a sulfonyl group, T1 and T2 each represent a C1-10 alkyl group, R1 and R2 each independently represent a C1-10 alkyl group which is substituted with at least one hydroxy group, and n1 and n2 each independently represent an integer of 0-4).Type: ApplicationFiled: August 20, 2021Publication date: September 21, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shou SHIMIZU, Mamoru TAMURA
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Publication number: 20230287165Abstract: A layer contains a block copolymer in which a microphase-separated structure of the block copolymer has been induced to be perpendicular to a substrate, the process being difficult to perform by means of heating at atmospheric pressure. A method produces this layer. A method produces a semiconductor device in which a vertically phase-separated block copolymer layer is used. The vertically phase-separated block copolymer layer is formed by heating under a pressure below atmospheric pressure and at a temperature at which induced self-assembly can occur. It is preferable that the vertical phase separation includes a lamellar portion. It is preferable that the lamellar portion includes PMMA. It is preferable that the heating temperature is 290° C. or higher. It is preferable to additionally have a layer, which neutralizes the surface energy of the block copolymer, beneath the block copolymer layer.Type: ApplicationFiled: August 18, 2021Publication date: September 14, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Ryuta MIZUOCHI, Hiroyuki WAKAYAMA, Mamoru TAMURA, Makoto NAKAJIMA, Rikimaru SAKAMOTO
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Publication number: 20230280654Abstract: An upper layer film-forming composition exhibits good solubility in hydrophobic solvents and can bring about vertical alignment of a block copolymer without dissolution, swelling or the like of a layer containing the block copolymer formed on a substrate. This upper layer film-forming composition is used for phase separation of a layer containing a block copolymer formed on a substrate, and contains: (A) a copolymer containing a unit structure derived from a maleimide structure (a) and a unit structure derived from a styrene structure; and (B) as a solvent, a non-aromatic hydrocarbon compound that is a liquid at normal temperature and pressure.Type: ApplicationFiled: June 4, 2021Publication date: September 7, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Ryuta MIZUOCHI, Sho SHIMIZU, Mamoru TAMURA
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Publication number: 20230259028Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the resist underlayer film-forming composition. The resist underlayer film-forming composition comprises an organic solvent and the reaction product of (A) a hydantoin-containing compound that has two epoxy groups and (B) a hydantoin-containing compound different from (A). This reaction product is preferably the reaction product of a secondary amino group present in the hydantoin-containing compound (B) and the epoxy group present in the hydantoin-containing compound (A).Type: ApplicationFiled: July 28, 2021Publication date: August 17, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Ryuta MIZUOCHI, Yuki KATO, Mamoru TAMURA
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Publication number: 20230244148Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern and producing a semiconductor device, which uses this composition for forming a resist underlayer film. A composition for forming an EUV resist underlayer film, said composition containing an organic solvent and a reaction product of a diepoxy compound and a compound represented by formula (1). (In formula (1), Y1 represents an alkylene group having from 1 to 10 carbon atoms, wherein at least one hydrogen atom is substituted by a fluorine atom; each of T1 and T2 independently represents a hydroxy group or a carboxy group; each of R1 and R2 independently represents an alkyl group having from 1-10 carbon atoms, said alkyl group being optionally substituted by a fluorine atom; and each of n1 and n2 independently represents an integer from 0 to 4.Type: ApplicationFiled: July 19, 2021Publication date: August 3, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shou SHIMIZU, Ryuta MIZUOCHI, Mamoru TAMURA
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Publication number: 20230174702Abstract: A layer including a block copolymer in which a microphase-separated structure of the block copolymer has been induced perpendicular to a substrate, this process being difficult in heating under atmospheric pressure; a method for producing the layer; and a method for producing a semiconductor device in which is used a vertically phase-separated layer of a block copolymer. A vertically phase-separated layer of a block copolymer formed by heating at a pressure below atmospheric pressure and a temperature at which induced self-assembly can occur.Type: ApplicationFiled: May 25, 2021Publication date: June 8, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Ryuta MIZUOCHI, Mamoru TAMURA, Makoto NAKAJIMA, Rikimaru SAKAMOTO
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Patent number: 11635692Abstract: A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.Type: GrantFiled: September 19, 2018Date of Patent: April 25, 2023Assignee: NISSAN CHEMICAL CORPORATIONInventors: Mamoru Tamura, Hiroto Ogata, Takahiro Kishioka
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Publication number: 20230098881Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. The composition for forming an EUV resist underlayer film has a basic organic group substituted with a protective group on a side chain of a (meth)acrylic polymer and further includes a solvent, but does not include a polymer other than said (meth)acrylic polymer. The organic group is an acyloxy group that has an amino group substituted with a protective group, or that has a nitrogen-containing heterocycle substituted with a protective group.Type: ApplicationFiled: February 5, 2021Publication date: March 30, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shou SHIMIZU, Mamoru TAMURA
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Publication number: 20230060697Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern, a method for manufacturing a resist pattern using the composition for forming a resist underlayer film and a method for manufacturing a semiconductor device. This composition for forming an EUV resist underlayer film includes a polymer that contains a structure represented by formula (1) at an end [in formula (1): X1 represents —O—, —S—, an ester bond or an amide bond; R1 represents an optionally halogenated alkyl group having 1-20 carbon atoms; and * represents a binding portion to the polymer end] and an organic solvent.Type: ApplicationFiled: January 29, 2021Publication date: March 2, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shou SHIMIZU, Hiroyuki WAKAYAMA, Ryuta MIZUOCHI, Mamoru TAMURA
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Patent number: 11542366Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.Type: GrantFiled: October 14, 2020Date of Patent: January 3, 2023Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroto Ogata, Yuki Usui, Mamoru Tamura, Takahiro Kishioka
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Patent number: 11319514Abstract: A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.Type: GrantFiled: February 28, 2018Date of Patent: May 3, 2022Assignee: NISSAN CHEMICAL CORPORATIONInventors: Takahiro Kishioka, Mamoru Tamura, Yuki Usui, Hiroto Ogata
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Patent number: 11287741Abstract: A composition for forming a resist underlayer film that functions as an anti-reflective coating during exposure and can be embedded in a recess having a narrow space and a high aspect ratio, and has excellent resistance to an aqueous hydrogen peroxide solution. A resist underlayer film-forming composition containing a resin, a compound of the following Formula (1a) or (1b): wherein X is carbonyl group or methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3?1+m 10, and n is an integer of 2 to 5, and a solvent, wherein the compound of Formula (1a) or (1b) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin.Type: GrantFiled: April 27, 2018Date of Patent: March 29, 2022Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hiroto Ogata, Yuto Hashimoto, Mamoru Tamura, Takahiro Kishioka
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Publication number: 20210024689Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.Type: ApplicationFiled: October 14, 2020Publication date: January 28, 2021Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroto OGATA, Yuki USUI, Mamoru TAMURA, Takahiro KISHIOKA
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Patent number: 10844167Abstract: A composition for forming a resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group. The copolymer is synthesized by a reaction of a carboxyl group of a dicarboxylic acid compound having an —O— group, a —S— group, or a —S—S— group with an epoxy group of a diglycidyl ether compound having an arylene group.Type: GrantFiled: February 23, 2017Date of Patent: November 24, 2020Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroto Ogata, Yuki Usui, Mamoru Tamura, Takahiro Kishioka
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Publication number: 20200209753Abstract: A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.Type: ApplicationFiled: September 19, 2018Publication date: July 2, 2020Applicant: NISSAN CHEMICAL CORPORATIONInventors: Mamoru TAMURA, Hiroto OGATA, Takahiro KISHIOKA
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Publication number: 20200201184Abstract: A composition for forming a resist underlayer film that functions as an anti-reflective coating during exposure and can be embedded in a recess having a narrow space and a high aspect ratio, and has excellent resistance to an aqueous hydrogen peroxide solution. A resist underlayer film-forming composition containing a resin, a compound of the following Formula (1a) or (1b): wherein X is carbonyl group or methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3?1+m 10, and n is an integer of 2 to 5, and a solvent, wherein the compound of Formula (1a) or (1b) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin.Type: ApplicationFiled: April 27, 2018Publication date: June 25, 2020Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hiroto OGATA, Yuto HASHIMOTO, Mamoru TAMURA, Takahiro KISHIOKA