Patents by Inventor Mamoru Yosida

Mamoru Yosida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4859617
    Abstract: In a thin-film transistor fabrication process using an amorphous silicon semiconductor layer, after the gate insulation layer is formed and before the a-Si semiconductor layer is formed, the surface of the gate insulation layer is treated with an H.sub.2 plasma. This treatment improves the transistor characteristics.
    Type: Grant
    Filed: June 3, 1988
    Date of Patent: August 22, 1989
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Tsutomu Nomoto, Mamoru Yosida, Mikio Mouri, Tsukasa Watanabe