Abstract: The present invention relates to a sensor network, and more particularly, to a device and method for managing sensor nodes, in which with respect to predictable events and unpredictable events detected by sensors, the predictable events can be managed as existing policies and the unpredictable events can be managed by receiving policies for the unpredictable events from peripheral sensor nodes or peripheral sensor networks, i.e., both predicted events and unpredicted events can be intelligently managed. According to the method device for managing events detected by sensor nodes according to the present invention the present invention, in the case where unpredictable events are detected, policies for the detected unpredictable events received automatically from peripheral sensor nodes or peripheral sensor networks, so that both predictable and unpredictable events can be managed.

Abstract: An apparatus for redundancy of a memory array includes a primary memory array including a plurality of memory cells, one or more of which are defective. A redundant array includes a CAM array that includes a plurality of memory cells. The CAM array is addressed by the address of a defective memory location within the primary memory array and provides a match identification and a resource identification. The redundant array also includes a translation array wherein an offset to configure an input/output multiplexer is stored. The redundant array also includes a redundant data array including a plurality of memory cells wherein one or more memory cells of the redundant data array are used instead of one or more defective memory cells of the primary array.

Abstract: An apparatus for redundancy of a memory array includes a primary memory array including a plurality of memory cells, one or more of which are defective. A redundant array includes a CAM array that includes a plurality of memory cells. The CAM array is addressed by the address of a defective memory location within the primary memory array and provides a match identification and a resource identification. The redundant array also includes a translation array wherein an offset to configure an input/output multiplexer is stored. The redundant array also includes a redundant data array including a plurality of memory cells wherein one or more memory cells of the redundant data array are used instead of one or more defective memory cells of the primary array.

Abstract: An integrated circuit includes clock deskew circuitry. The deskew circuitry includes a loop circuit to align an input clock signal with an output clock signal, and also aligns transmitted data with the output clock signal.

Abstract: An integrated circuit includes clock deskew circuitry. The deskew circuitry includes multiple loop circuits to align a received clock with a data eye, and to reduce the effects of clock drift caused by voltage and temperature variations.

Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses for a clocking architecture using a bidirectional clock. In an embodiment, a chip includes a bidirectional clock port capable of being statically configured to receive or to transmit a reference clock. In one embodiment, the chip includes a first port to receive data and a second port, wherein the chip repeats at least a portion of the data that it receives on the first port to a transmitter at the second port. Other embodiments are described and claimed.

Abstract: A method and an apparatus to perform clock crossing on data paths have been disclosed. In one embodiment, the method includes sampling data received by a first memory device in a computing system on a first data path to determine a clock crossing phase, the data on the first data path being in a first domain of a receive clock signal. The method may further include modifying a transmit clock signal based on the clock crossing phase. In some embodiments, the method further includes transferring data received by the first memory device on a plurality of data paths from the first domain of the receive clock signal into a second domain of the modified transmit clock signal. Other embodiments have been claimed and described.

Abstract: De-skew is performed on a nibble-by-nibble basis where a nibble is not limited to four bits.

Abstract: A method of testing a delay lock loop circuit is provided which comprises receiving an input signal and configuring the delay lock loop to generate a delay lock loop output signal based on the input signal. The method further comprises generating a test output signal from the input signal and delay lock loop output signal indicative of a relationship between a transition on the input signal and a transition on delay lock loop output signal.

Abstract: A method, apparatus, and system are disclosed. In one embodiment the method comprises inputting an early clock signal and a late clock signal to a memory device and generating an average clock signal for the memory device by averaging the early clock signal and the late clock signal.

Abstract: A device includes a number of output circuits to drive a number of output signals. The output signals have timing relationship among each other. The device also includes a control loop circuit serving as a feedback loop to adjust any mismatch between the timing relationships of the output signals.

Abstract: A device includes an output circuit to output an output signal. The device also includes a control loop circuit to measure the real slew of the output signal. The control loop circuit compares the real slew with a target slew adjusts the output circuit when the real slew and the target are mismatched.

Abstract: Embodiments of the invention provide for a DLL architecture including a coarse-fine type arrangement using one loop for non-continuous strobe that can be also be adapted for continuous clocks as well. In particular, a reference loop establishes precise coarse unit delay. A slave delay line duplicates unit delay. A phase interpolator interpolates between unit delay to produce fine delay.

Abstract: A flash memory device having a page buffer circuit with special testing modes. The page buffer circuit comprises a plane A and a plane B, each comprising a static random access memory array. The page buffer circuit further comprises a mode control circuit that maps the plane A and the plane B as a contiguous extended memory space accessible over a host bus. The page buffer circuit also maps the plane A and the plane B as a control store for a flash array controller of the flash memory device.

Abstract: A method and circuitry are described that permit one to utilize a partially functional integrated circuit memory. A memory array is segregated into separate blocks that can each be isolated to minimize the amount of the memory array rendered unusable by a defect. Circuitry is also provided to program memory cells within the array to one of at least three amounts of charge and thereby increase the amount of storage provided by the remaining functional blocks.

Abstract: A flash memory device having a page buffer circuit providing a shared resource between a flash array controller circuit and a user. The page buffer circuit comprises a Plane A and a Plane B, wherein each of the planes A and B is a static random access memory array. The page buffer circuit further comprises a mode control circuit for enabling access to the planes A and B over a host bus in a user mode and access to the planes A and B by the flash array controller in a flash array controller mode.

Abstract: A flash memory device having a page buffer circuit with special testing modes. The page buffer circuit comprises a plane A and a plane B, each comprising a static random access memory array. The page buffer circuit further comprises a mode control circuit that maps the plane A and the plane B as a contiguous extended memory space accessible over a host bus. The page buffer circuit also maps the plane A and the plane B as a control store for a flash array controller of the flash memory device.

Abstract: Synchronous address latching circuitry for a memory device having at least first and second banks of memory arrays is described. The latching circuitry has a master latch to receive and store an external address. A first slave latch is also included to receive and store the external address from the master latch if the external address belongs to the first bank and to provide the external address as a first address to the first bank. A second slave latch is included to receive and store the external address from the master latch if the external address belongs to the second bank and to provide the external address as a second address to the second bank.

Abstract: A programming verify circuit for controlling the memory cells to which programming voltages are applied, the circuit including a comparator for testing the state of each cell being programmed with the state to which the cell is being programmed, and a program load circuit which responds to the result of the test by the comparator to hold a condition for each memory cell being programmed to indicate whether the memory cell should be further programmed, each program load circuit including circuitry for precluding the holding of a condition indicating further programming is necessary once the associated memory cell has been initially verified as programmed by the comparator.

Abstract: Synchronous address latching circuitry for a memory device having at least first and second banks of memory arrays is described. The latching circuitry has first and second master latches to receive and store an external address. A first slave latch is also included to receive and store the external address from the first master latch if the external address belongs to the first bank and to provide the external address as a first address to the first bank. A second slave latch is included to receive and store the external address from the second master latch if the external address belongs to the second bank and to provide the external address as a second address to the second bank.