Abstract: A device includes vertically and laterally spaced sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the first wafer layer and a third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. A trench extends through the second wafer and through a portion of the signal routing layer. The trench electrically isolates a region of the second wafer layer surrounded by the trench from a remainder of the second wafer layer. Another active transducer element of another sensor is formed in this region. The transducer element formed in the second wafer layer may be a diaphragm for a pressure sensor of the sensor device.

Abstract: A device includes vertically and laterally spaced sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the first wafer layer and a third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. A trench extends through the second wafer and through a portion of the signal routing layer. The trench electrically isolates a region of the second wafer layer surrounded by the trench from a remainder of the second wafer layer. Another active transducer element of another sensor is formed in this region. The transducer element formed in the second wafer layer may be a diaphragm for a pressure sensor of the sensor device.

Abstract: A sensor device includes sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the second wafer layer. A third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. Ports may be formed in the third wafer layer to adjust the pressure within the cavities during manufacture. The third wafer layer includes either a reference element or diaphragm of a pressure sensor. A fourth wafer layer may be coupled to the third wafer layer. The third and fourth wafer layers can include active and non-active circuitry such as integrated circuits, sensor components, microcontrollers, and the like.

Abstract: The various embodiments described herein provide microelectromechanical systems (MEMS) sensor devices and methods of forming the same. In general, the embodiments provide MEMS sensor devices formed with two semiconductor die that are bonded together. Specifically, a sensor die includes at least one MEMS sensor fabricated thereon, such as MEMS gyroscope or MEMS accelerometer. A control-circuit die includes at least one integrated MEMS control circuit formed on an active area of the die. The control-circuit die is bonded to the sensor die with the active area and the integrated MEMS control circuits on the exterior side. The bonding defines and seals a cavity between the two die that encompasses the MEMS sensor and can be used to seal the MEMS sensor in a vacuum.

Abstract: A device (20) includes sensors (30, 32, 34) that sense different physical stimuli. Fabrication (90) entails forming (92) a device structure (22) to include the sensors and coupling (150) a cap structure (24) with the device structure so that the sensors are interposed between the cap structure and a substrate layer (28) of the device structure. Fabrication (90) further entails forming ports (38, 40) in the substrate layer (28) such that one port (38) exposes a sense element (44) of the sensor (30) to an external environment (72), and another port (40) temporarily exposes the sensor (34) to the external environment. A seal structure (26) is attached to the substrate layer (28) such that one port (40) is hermetically sealed by the seal structure and an external port (46) of the seal structure is aligned with the port (38).

Abstract: A wafer level package for a MEMS device is made by bonding a MEMS wafer and a lid wafer together to form a hermetically sealed cavity. One or more vias filled with conductive or semiconductive material is etched one of the wafers to form one or more rods extending through the wafer. The rods provide electrical connection to components within the hermetically sealed cavity.

Abstract: A wafer level package for a MEMS device is made by bonding a MEMS wafer and a lid wafer together to form a hermetically sealed cavity. One or more vias filled with conductive or semiconductive material is etched one of the wafers to form one or more rods extending through the wafer. The rods provide electrical connection to components within the hermetically sealed cavity.