Abstract: An image sensor device includes a QFN type leadframe having a central die attach flag and an outer bonding pad area having a plurality of bonding pads. A sensor IC is attached to the flag. The IC has a first surface with an active area and a peripheral bonding pad area that includes bonding pads. Wires are wirebonded to respective ones of the IC bonding pads and corresponding ones of the leadframe bonding pads, thereby electrically connecting the IC and the leadframe. Stud bumps are formed on the first surface of the IC and a transparent cover is disposed over the IC active area and resting on the stud bumps. The cover allows light to pass therethrough onto the IC active area. A mold compound is formed over the leadframe, wirebonds and a peripheral portion of the cover.

Abstract: A semiconductor device 30 includes a base carrier 32, an adhesive material layer 36 and an integrated circuit die 34. The base carrier 32 has a top side and a bottom side, the top side having a central area for receiving the die 34 and a peripheral area surrounding the central area. The adhesive material layer 36 is disposed on the top side of the base carrier in an “X” shaped pattern. The “X” shaped pattern includes two bisecting lines. The two bisecting lines extend well beyond the central area and into the peripheral area of the base carrier top surface. The die 34 is attached to the base carrier 32 with the adhesive material layer 36 at the central area. Even after attachment of the die 34, the adhesive material 36 extends well beyond the die 34 and the central area into the peripheral area.

Abstract: A leadframe (20) for a semiconductor device includes a paddle ring (22) having an inner perimeter (24), an outer perimeter (26), and a cavity (28) located within the inner perimeter (24) for receiving an integrated circuit die (30). A first row of terminals (32) surrounds the outer perimeter (26) and a second row of terminals (34) surrounds the first row of terminals (32). Each of the terminals of the first row of terminals (32) is individually connected to the paddle ring (22) and each of the terminals of the second row of terminals (34) is connected to one side of a connection bar (78, 79), which is connected to one of the terminals of the first row (32) or to the paddle ring (22).

Abstract: A semiconductor device 30 includes a base carrier 32, an adhesive material layer 36 and an integrated circuit die 34. The base carrier 32 has a top side and a bottom side, the top side having a central area for receiving the die 34 and a peripheral area surrounding the central area. The adhesive material layer 36 is disposed on the top side of the base carrier in an “X” shaped pattern. The “X” shaped pattern includes two bisecting lines. The two bisecting lines extend well beyond the central area and into the peripheral area of the base carrier top surface. The die 34 is attached to the base carrier 32 with the adhesive material layer 36 at the central area. Even after attachment of the die 34, the adhesive material 36 extends well beyond the die 34 and the central area into the peripheral area.

Abstract: A semiconductor device 30 includes a base carrier 32, an adhesive material layer 36 and an integrated circuit die 34. The base carrier 32 has a top side and a bottom side, the top side having a central area for receiving the die 34 and a peripheral area surrounding the central area. The adhesive material layer 36 is disposed on the top side of the base carrier in an “X” shaped pattern. The “X” shaped pattern includes two bisecting lines. The two bisecting lines extend well beyond the central area and into the peripheral area of the base carrier top surface. The die 34 is attached to the base carrier 32 with the adhesive material layer 36 at the central area. Even after attachment of the die 34, the adhesive material 36 extends well beyond the die 34 and the central area into the peripheral area.

Abstract: An image sensor device includes a QFN type leadframe having a central die attach flag and an outer bonding pad area having a plurality of bonding pads. A sensor IC is attached to the flag. The IC has a first surface with an active area and a peripheral bonding pad area that includes bonding pads. Wires are wirebonded to respective ones of the IC bonding pads and corresponding ones of the leadframe bonding pads, thereby electrically connecting the IC and the leadframe. Stud bumps are formed on the first surface of the IC and a transparent cover is disposed over the IC active area and resting on the stud bumps. The cover allows light to pass therethrough onto the IC active area. A mold compound is formed over the leadframe, wirebonds and a peripheral portion of the cover.

Abstract: An image sensor device includes a QFN type leadframe having a central die attach flag and an outer bonding pad area having a plurality of bonding pads. A sensor IC is attached to the flag. The IC has a first surface with an active area and a peripheral bonding pad area that includes bonding pads. Wires are wirebonded to respective ones of the IC bonding pads and corresponding ones of the leadframe bonding pads, thereby electrically connecting the IC and the leadframe. Stud bumps are formed on the first surface of the IC and a transparent cover is disposed over the IC active area and resting on the stud bumps. The cover allows light to pass therethrough onto the IC active area. A mold compound is formed over the leadframe, wirebonds and a peripheral portion of the cover.

Abstract: A leadframe (20) for a semiconductor device includes a paddle ring (22) having an inner perimeter (24), an outer perimeter (26), and a cavity (28) located within the inner perimeter (24) for receiving an integrated circuit die (30). A first row of terminals (32) surrounds the outer perimeter (26) and a second row of terminals (34) surrounds the first row of terminals (32). Each of the terminals of the first row of terminals (32) is individually connected to the paddle ring (22) and each of the terminals of the second row of terminals (34) is connected to one side of a connection bar (78, 79), which is connected to one of the terminals of the first row (32) or to the paddle ring (22).

Abstract: A semiconductor device 30 includes a base carrier 32, an adhesive material layer 36 and an integrated circuit die 34. The base carrier 32 has a top side and a bottom side, the top side having a central area for receiving the die 34 and a peripheral area surrounding the central area. The adhesive material layer 36 is disposed on the top side of the base carrier in an “X” shaped pattern. The “X” shaped pattern includes two bisecting lines. The two bisecting lines extend well beyond the central area and into the peripheral area of the base carrier top surface. The die 34 is attached to the base carrier 32 with the adhesive material layer 36 at the central area. Even after attachment of the die 34, the adhesive material 36 extends well beyond the die 34 and the central area into the peripheral area.

Abstract: A QFN semiconductor package (2) having a plurality of connection pads (4) and an embedded die (10) is disclosed. The connection pads (4) at least partially enclose a die receiving area (6). An insulator (8) is disposed in the die receiving area (6). The die (10) is attached to the insulator (8). The die (10) has a plurality of die bond pads. A plurality of connectors (12) connects the die bond pads to respective connection pads (4). An encapsulant (14) at least partially encapsulates the connection pads (4), insulator (8) and die (10). The connection pads (4) and insulator (8) have exposed surfaces on an outer surface of the encapsulant (14). The exposed surfaces are substantially co-planar with the outer surface of the encapsulant (14). A method of producing the semiconductor package (2) is also disclosed. Preferably, the insulator (8) includes a dispensed epoxy layer that is curable after the die is attached.