Abstract: An oxide semiconductor transistor used in a pixel element of a display device and a method of manufacturing the same are disclosed. The oxide semiconductor transistor used in a pixel element of a display device comprises a substrate, a first gate electrode located on the substrate, a source electrode and a drain electrode located on the first gate electrode and a second gate electrode located on the source electrode and the drain electrode. Here, the first gate electrode is electrically connected to the second gate electrode, the same voltage is applied to the first gate electrode and the second gate electrode, and a width of the second gate electrode is shorter than a length between the source electrode and the drain electrode.

Abstract: An oxide semiconductor transistor used in a pixel element of a display device and a method of manufacturing the same are disclosed. The oxide semiconductor transistor used in a pixel element of a display device comprises a substrate, a first gate electrode located on the substrate, a source electrode and a drain electrode located on the first gate electrode and a second gate electrode located on the source electrode and the drain electrode. Here, the first gate electrode is electrically connected to the second gate electrode, the same voltage is applied to the first gate electrode and the second gate electrode, and a width of the second gate electrode is shorter than a length between the source electrode and the drain electrode.