Patents by Inventor Man-Ping Cai
Man-Ping Cai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230352349Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.Type: ApplicationFiled: July 10, 2023Publication date: November 2, 2023Applicant: Applied Materials, Inc.Inventors: Mandar B. Pandit, Man-Ping Cai, Wenhui Li, Michael Wenyoung Tsiang, Praket Prakash Jha, Jingmin Leng
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Patent number: 11699623Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.Type: GrantFiled: October 14, 2020Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Mandar B. Pandit, Man-Ping Cai, Wenhui Li, Michael Wenyoung Tsiang, Praket Prakash Jha, Jingmin Leng
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Publication number: 20220375747Abstract: Processing methods disclosed herein comprise forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor and a reactant. By controlling at least one of a precursor/reactant pressure ratio, a precursor/reactant flow ratio and substrate temperature formation of miniature defects is minimized. Controlling at least one of the process parameters may reduce the number of miniature defects. The FCVD film can be cured by any suitable curing process to form a smooth FCVD film.Type: ApplicationFiled: May 20, 2021Publication date: November 24, 2022Applicant: Applied Materials, Inc.Inventors: Wenhui Li, Praket P. Jha, Mandar B. Pandit, Man-Ping Cai, Jingmei Liang, Michael Wenyoung Tsiang
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Publication number: 20220115275Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.Type: ApplicationFiled: October 14, 2020Publication date: April 14, 2022Applicant: Applied Materials, Inc.Inventors: Mandar B. Pandit, Man-Ping Cai, Wenhui Li, Michael Wenyoung Tsiang, Praket Prakash Jha, Jingmin Leng
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Patent number: 8349741Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.Type: GrantFiled: April 25, 2012Date of Patent: January 8, 2013Assignee: Applied Materials, Inc.Inventors: Hang Yu, Deenesh Padhi, Man-Ping Cai, Naomi Yoshida, Li Yan Miao, Siu F. Cheng, Shahid Shaikh, Sohyun Park, Heung Lak Park, Bok Hoen Kim
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Publication number: 20120208374Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.Type: ApplicationFiled: April 25, 2012Publication date: August 16, 2012Applicant: Applied Materials, Inc.Inventors: Hang Yu, Deenesh Padhi, Man-Ping Cai, Naomi Yoshida, Li Yan Miao, Siu F. Cheng, Shahid Shaikh, Sohyun Park, Heung Lak Park, Bok Hoen Kim
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Patent number: 8227352Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.Type: GrantFiled: April 25, 2011Date of Patent: July 24, 2012Assignee: Applied Materials, Inc.Inventors: Hang Yu, Deenesh Padhi, Man-Ping Cai, Naomi Yoshida, Li Yan Miao, Siu F. Cheng, Shahid Shaikh, Sohyun Park, Heung Lak Park, Bok Hoen Kim
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Publication number: 20120015521Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.Type: ApplicationFiled: April 25, 2011Publication date: January 19, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Hang Yu, Deenesh Padhi, Man-Ping Cai, Naomi Yoshida, Li Yan Miao, Siu F. Cheng, Shahid Shaikh, Sohyun Park, Heung Lak Park, Bok Hoen Kim
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Publication number: 20060102197Abstract: A method for removing residue from a layer of conductive material on a substrate is provided herein. In one embodiment, the method includes introducing a process gas into a vacuum chamber having a substrate surface with residue from exposure to a fluorine-containing environment. The process gas includes a hydrogen-containing gas. Optionally, the process gas may further include an oxygen-containing or a nitrogen containing gas. A plasma of the process gas is thereafter maintained in the vacuum chamber for a predetermined period of time to remove the residue from the surface. The temperature of the substrate is maintained at a temperature between about 10 degrees Celsius and about 90 degrees Celsius during the plasma step.Type: ApplicationFiled: November 16, 2004Publication date: May 18, 2006Inventors: Kang-Lie Chiang, Man-Ping Cai, Shawming Ma, Yan Ye, Peter Hsieh
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Patent number: 5870187Abstract: An automated method for aligning wafer surface scan maps and locating defects such as particle contaminant distributions on a wafer surface. More specifically, the invention is an automated method for locating added and removed contaminants and other defects on a semiconductor wafer surface after the wafer has undergone wafer-handling and/or processing. A second data set of a second scan of a wafer surface is misalignment-corrected to a first coordinate system of a first scan of the wafer surface. Thereafter, a final match is made between a first data set of the first scan and the misalignment-corrected data of the second scan. Non-matching locations in the misalignment-corrected data of the second scan represent added defects on the surface of the wafer. Non-matching locations in the base data of the first scan represent removed defects from the surface of the wafer.Type: GrantFiled: August 8, 1997Date of Patent: February 9, 1999Assignee: Applied Materials, Inc.Inventors: Yuri Uritsky, Patrick D. Kinney, Man-Ping Cai