Abstract: This invention relates to a resist patterning method of preventing resist pattern collapse, which is occurred as the minimum pattern size becomes smaller, in photolithography for making semiconductor device and also introduce novel rinse liquid in which fluorocarbon surfactant having hydrophobic group and hydrophilic group is dissolved in deionezed water and have low surface tension for preventing resist pattern collapse in wet development method. With this invention, the fine resist pattern can be obtained without resist pattern collapse from conventional wet development method with no additional specific instrument for prevention of resist pattern collapse.