Patents by Inventor Man Song

Man Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170346015
    Abstract: In the organic electroluminescent device having at least an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode in this order, the hole injection layer includes an arylamine compound of the following general formula (1) and an electron acceptor. In the formula, Ar1 to Ar4 may be the same or different, and represent a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, or a substituted or unsubstituted condensed polycyclic aromatic group.
    Type: Application
    Filed: December 1, 2015
    Publication date: November 30, 2017
    Inventors: Shuichi Hayashi, Naoaki Kabasawa, Daizou Kanda, Shunji Mochizuki, Soon-wook Wook Cha, Sang- woo Park, Ju-man Song, Kyung- seok Jeon
  • Publication number: 20170222155
    Abstract: The present invention relates to a condensed fluorene derivative comprising a hetero ring, and, more specifically, relates to an intermediate for producing a hetero-ring compound able to exhibit the outstanding element characteristic of a long life and outstanding luminance and light-emission efficiency when used as an organic light-emitting material.
    Type: Application
    Filed: June 10, 2015
    Publication date: August 3, 2017
    Inventors: Soon-Wook CHA, Ju-man SONG, Yu-rim LEE, Sang-Woo PARK, Hee-Dae KIM, Seok-Bae PARK
  • Publication number: 20170207395
    Abstract: An organic electroluminescent device having high efficiency, low driving voltage and a long lifetime is provided by combining various materials for an organic electroluminescent device, which are excellent, as materials for an organic electroluminescent device having high efficiency and high durability, in hole and electron injection/transport performances, electron blocking ability, stability in a thin-film state and durability, so as to allow the respective materials to effectively reveal their characteristics. In the organic electroluminescent device having at least an anode, a hole transport layer, a light emitting layer, an electron transport layer and a cathode in this order, the hole transport layer includes an arylamine compound represented by the following general formula (1), and the light emitting layer comprises an amine derivative of the following general formula (2) having a condensed ring structure.
    Type: Application
    Filed: July 16, 2015
    Publication date: July 20, 2017
    Inventors: Shuichi Hayashi, Daizou Kanda, Soon- Wook Cha, Sang- Woo Park, Ju- Man Song, Kyung- Seok Jeon
  • Publication number: 20170062729
    Abstract: The present invention relates to a heterocyclic compound containing an aromatic amine group and an organic light-emitting device comprising the same and, more specifically, to a heterocyclic compound and an organic light-emitting device comprising the same, the heterocyclic compound being excellent in brightness and excellent light emission efficiency and being able to exhibit long life and excellent device characteristics when being used as an organic light-emitting material.
    Type: Application
    Filed: May 7, 2015
    Publication date: March 2, 2017
    Inventors: Soon-Wook CHA, Seok-Bae PARK, Hee-Dae KIM, Yu-rim LEE, Sang-Woo PARK, Ju-man SONG
  • Patent number: 9120771
    Abstract: The present invention relates to an azetidine derivative or a pharmaceutically acceptable salt thereof, and an antidepressant agent or a composition for the prevention or treatment of psychiatric disorders including the same. The azetidine derivative is useful as a triple reuptake inhibitor capable of inhibiting reuptake of the neurotransmitters, dopamine, serotonin, and norepinephrine at the same time.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: September 1, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Hoh-Gyu Hahn, Kee-Dal Nam, Min-soo Han, Young-Hue Han, Chi-Man Song, Dong-Yun Shin
  • Patent number: 9012481
    Abstract: Novel benzoarylureido compounds and a use thereof for prevention and/or treatment of the neurodegenerative brain disease are provided. The neurodegenerative brain diseases may include Alzheimer's disease, dementia, Parkinson's disease, stroke, amyloidosis, Pick's disease, Lou Gehrig's disease, Huntington's disease, Creutzfeld-Jakob disease, and the like.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: April 21, 2015
    Assignee: Korea Institute of Science and Technology
    Inventors: Hoh-Gyu Hahn, Kee-Dal Nam, Dong-Yun Shin, Chan-Ho Park, Sung-Woo Cho, Eun-A Kim, Ghil-Soo Nam, Kyung-Il Chol, Seon-Hee Seo, Hee-Sup Shin, Dong-Jin Kim, Ae-Nim Pae, Hye-Jin Chung, Hyun-Ah Choo, Hye-Whon Rhim, Yong-Seo Cho, Eun-Joo Roh, Gyo-Chang Keum, Kee-Hyun Choi, Kye-Jung Shin, Chan-Seong Cheong, Jae-Kyun Lee, Yong-Koo Kang, Young-Soo Kim, Woong-Seo Park, Key-Sun Kim, He-Sson Chung, Chi-Man Song, Sun-Joon Min, Eunice Eun-Kyeong Kim, Cheol-Ju Lee, Soon-Bang Kang
  • Publication number: 20140171402
    Abstract: The present invention relates to an azetidine derivative or a pharmaceutically acceptable salt thereof, and an antidepressant agent or a composition for the prevention or treatment of psychiatric disorders including the same. The azetidine derivative is useful as a triple reuptake inhibitor capable of inhibiting reuptake of the neurotransmitters, dopamine, serotonin, and norepinephrine at the same time.
    Type: Application
    Filed: September 4, 2012
    Publication date: June 19, 2014
    Inventors: Hoh-Gyu Hahn, Kee-Dal Nam, Min-soo Han, Young-Hue Han, Chi-Man Song, Dong-Yun Shin
  • Patent number: 8299072
    Abstract: The present invention relates to pyrazolylmethylamine-piperazine derivatives and their pharmaceutically acceptable salts effective as calcium channel modulators and a method of manufacturing the same. The present invention also relates to the medicinal use of the above compounds as therapeutic treatment of diseases due to their effect as calcium channel modulators.
    Type: Grant
    Filed: September 28, 2009
    Date of Patent: October 30, 2012
    Assignee: Korea Institute of Science and Technology
    Inventors: Ghilsoo Nam, Kyung Il Choi, Hye Ran Kim, Seon Hee Seo, Yoon Jee Kim, Hee Sup Shin, Dong Jin Kim, Ae Nim Pae, Hye Jin Chung, Hyunah Choo, Hyewhon Rhim, Yong Seo Cho, Eun Joo Roh, Gyo Chang Keum, Kee Hyun Choi, Kye Jung Shin, Hoh Gyu Hahn, Chan Seong Cheong, Jae Kyun Lee, Kee Dal Nam, Yong Koo Kang, Youngsoo Kim, Woong Seo Park, Eunice Eun-Kyeong Kim, Key-Sun Kim, Hesson Chung, Dong Yun Shin, Chi man Song
  • Publication number: 20110319456
    Abstract: Novel benzoarylureido compounds and a use thereof for prevention and/or treatment of the neurodegenerative brain disease are provided. The neurodegenerative brain diseases may include Alzheimer's disease, dementia, Parkinson's disease, stroke, amyloidosis, Pick's disease, Lou Gehrig's disease, Huntington's disease, Creutzfeld-Jakob disease, and the like.
    Type: Application
    Filed: December 29, 2009
    Publication date: December 29, 2011
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Hoh-Gyu Hahn, Kee-Dal Nam, Dong-Yun Shin, Chan-Ho Park, Sung-Woo Cho, Eun-A Kim, Ghil-Soo Nam, Kyung-Il Chol, Seon-Hee Seo, Hee-Sup Shin, Dong-JIn Kim, Ae-Nim Pae, Hye-JIn Chung, Hyun-Ah Choo, Hye-Whon Rhim, Yong-Seo Cho, Eun-Jon Roh, Gyo-Chang Keum, Kee-Hyun Choi, Kye-Jung Shin, Chan-Seong Cheong, Jae-Kyun Lee, Yong-Koo Kang, Young-Soo Kim, Woong-Seo Park, Key-Sun Kim, He-Sson Chung, Chi-Man Song, Sun-Joon Min, Eunlce Eun-Kyeong Kim, Cheol-Ju Lee, Soon-Bang Kang
  • Patent number: 7902544
    Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: March 8, 2011
    Assignee: Samsung LED Co., Ltd
    Inventors: Sun Woon Kim, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
  • Patent number: 7829882
    Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: November 9, 2010
    Assignee: Samsung LED Co., Ltd.
    Inventors: Sun Woon Kim, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
  • Publication number: 20100230657
    Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
    Type: Application
    Filed: May 26, 2010
    Publication date: September 16, 2010
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sun Woon KIM, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
  • Patent number: 7705364
    Abstract: A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.
    Type: Grant
    Filed: October 23, 2006
    Date of Patent: April 27, 2010
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Dong Yul Lee, Sang Won Kang, Keun Man Song, Je Won Kim, Sang Su Hong
  • Publication number: 20100094006
    Abstract: The present invention relates to pyrazolylmethylamine-piperazine derivatives and their pharmaceutically acceptable salts effective as calcium channel modulators and a method of manufacturing the same. The present invention also relates to the medicinal use of the above compounds as therapeutic treatment of diseases due to their effect as calcium channel modulators.
    Type: Application
    Filed: September 28, 2009
    Publication date: April 15, 2010
    Inventors: Ghilsoo NAM, Kyung Il Choi, Hye Ran Kim, Seon Hee Seo, Yoon Jee Kim, Hee Sup Shin, Dong Jin Kim, Ae Nim Pae, Hye Jin Chung, Hyunah Choo, Hyewhon Rhim, Yong Seo Cho, Eun Joo Roh, Gyo Chang Keum, Kee Hyun Choi, Kye Jung Shin, Hoh Gyu Hahn, Chan Seong Cheong, Jae Kyun Lee, Kee Dal Nam, Yong Koo Kang, Youngsoo Kim, Woong Seo Park, Eunice Eun-Kyeong Kim, Key-Sun Kim, Hesson Chung, Dong Yun Shin, Chi man Song
  • Patent number: 7393710
    Abstract: The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
    Type: Grant
    Filed: October 11, 2005
    Date of Patent: July 1, 2008
    Assignee: Samsung Electro-Mechanics Co., Ltd
    Inventors: Jin Chul Kim, Su Yeol Lee, Chang Zoo Kim, Sang Heon Han, Keun Man Song, Tae Jun Kim, Seok Beom Choi
  • Publication number: 20070269408
    Abstract: The present invention relates to the IL-12p40 subunit mutant gene which can produce IL-12 (interleukin 12) of human and mouse origin with high activity, the expression vector including above mutant gene and the use of them to DNA vaccine adjuvant. Particularly, it relates to IL-12p40 mutant gene which inhibits the secretion of IL-12p40 but normally secretes active IL-12p70 by making mutation at Asn-222 (human) or Asn-220 (mouse) amino acid of IL-12p40, which acts as a competitive inhibitor of active form of IL-12, IL-12p70. Therefore, the IL-12p40 mutant gene of the present invention can be useful for DNA vaccination and gene therapy against various diseases, for example, AIDS, hepatitis C or hepatitis B, cancer, influenza, tuberculosis and malaria, which essentially require cellular immune responses for their therapy.
    Type: Application
    Filed: August 2, 2007
    Publication date: November 22, 2007
    Inventors: Young Chul SUNG, Sung Lee, Sang Ha, Man Song, Jun Chang
  • Patent number: 6303404
    Abstract: Disclosed is a method for fabricating a white LED which comprises, as a single active layer, an InGaN thin film which enables emission of white light. The InGaN thin film is constructed by taking advantage of the spinodal decomposition of the ternary compound and rapid thermal annealing. When growing the InGaN thin film on an n-type GaN formed on a sappier substrate under a growth condition, the thin film undergoes spinodal decomposition into two phases which show photoluminescence of a wavelength range from violet to blue and from green to blue, respectively, after which the surface of the thin film is thermally stabilized by rapid thermal annealing and the photoluminescence of the In-deficient phase is improved, so as to give intensive white photoluminescence to the InGaN single active layer. The LED which recruits such a single active InGaN thin film is superb in light emission efficiency and can be fabricated in a significantly reduced process steps.
    Type: Grant
    Filed: May 28, 1999
    Date of Patent: October 16, 2001
    Inventors: Yong Tae Moon, Dong Joon Kim, Keun Man Song, Seong Ju Park