Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an interconnect structure over a substrate. The method includes forming a first conductive pad and a mask layer over the interconnect structure. The mask layer covers a top surface of the first conductive pad. The method includes forming a metal oxide layer over a sidewall of the first conductive pad. The method includes forming a second conductive pad over the first conductive pad and passing through the mask layer. The first conductive pad and the second conductive pad are made of different materials.