Abstract: Embodiments of present disclosure provide a MIM capacitor device structure including a first conductive layer and a dielectric stack disposed on the first and second portions of the first conductive layer. The dielectric stack includes a first dielectric layer disposed on the first conductive layer, a high-k dielectric layer disposed on the first dielectric layer, and a second dielectric layer disposed on the high-k dielectric layer. The structure further includes a second conductive layer disposed on the dielectric stack, a first conductive feature extending through the first conductive layer and a first portion of the dielectric stack, and a second conductive feature extending through a second portion of the dielectric stack and the second conductive layer.

Abstract: A method includes: forming a redistribution layer (RDL) comprising metal material over a substrate; forming an oxidation layer of the metal material on sidewalls of the RDL; and depositing a passivation layer over the RDL and the oxidation layer, wherein the oxidation layer is formed between the RDL and the passivation layer; wherein the oxidation layer strengthens bonding between the RDL and the passivation layer to resist hydrogen induced voids from forming. The method may allow for performing a hydrogen plasma annealing treatment without hydrogen-induced voiding in top or bottom corners of the RDL. A device includes: an RDL comprising metal material formed over a substrate; a passivation layer formed over the RDL; and an oxidation layer of the metal material formed on sidewalls of the RDL between the RDL and the passivation layer. The device may be formed without voids in top or bottom corners of the RDL.

Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an interconnect structure over a substrate. The method includes forming a first conductive pad and a mask layer over the interconnect structure. The mask layer covers a top surface of the first conductive pad. The method includes forming a metal oxide layer over a sidewall of the first conductive pad. The method includes forming a second conductive pad over the first conductive pad and passing through the mask layer. The first conductive pad and the second conductive pad are made of different materials.