Abstract: A substrate processing device for processing a substrate is provided. The substrate processing device includes: a processing container configured to accommodate a substrate; a placement stage on which the substrate is mounted in the processing container; an exhauster configured to exhaust a processing gas in the processing container; and a partition wall disposed in the processing container and surrounding the placement stage, wherein, inside the partition wall, an exhaust flow path, which communicates with the exhauster, is formed to extend in a vertical direction over an entire circumference of the partition wall, and a plurality of openings, which communicates with a substrate processing space formed inside the partition wall above the placement stage and communicates with the exhaust flow path, is formed at regular intervals in an inner circumferential direction of the partition wall.

Abstract: A film forming apparatus includes: a mounting table that is lifted/lowered between a processing location and a delivery location below the processing location; an encompassing member for encompassing the mounting table positioned at the processing location and to divide an inside of a processing container into a processing space of an upper space and a space of a lower side; an exhaust part for evacuating the inside of the processing container through the processing space; a purge gas supply unit configured to supply a purge gas to the lower side space; a clamp ring stacked on an upper surface of the encompassing member when the mounting table is positioned at the delivery location; and a guiding part formed at the encompassing member to be extended between an upper side of the mounting table and a lower side of the clamp ring and to guide a flow of the purge gas.

Abstract: A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.

Abstract: A film forming apparatus that includes a mounting table for loading a wafer, a encompassing member surrounding the mounting table and dividing an inside of a process container, an exhaust part that vacuum exhausts the process container, a clamp ring loaded upon an upper space of the encompassing member and lifted from the upper space of the encompassing member while contacting an inner circumference part thereof with an outer circumference of the wafer loaded on the mounting table, and a cylindrical wall extended downward from the clamp ring, formed along a circumference of the clamp ring into a cylinder shape, and positioned between an outer circumference surface of the mounting table and an inner circumference surface of the encompassing member.

Abstract: A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.

Abstract: A film forming apparatus includes: a mounting table that is lifted/lowered between a processing location and a delivery location below the processing location; an encompassing member for encompassing the mounting table positioned at the processing location and to divide an inside of a processing container into a processing space of an upper space and a space of a lower side; an exhaust part for evacuating the inside of the processing container through the processing space; a purge gas supply unit configured to supply a purge gas to the lower side space; a clamp ring stacked on an upper surface of the encompassing member when the mounting table is positioned at the delivery location; and a guiding part formed at the encompassing member to be extended between an upper side of the mounting table and a lower side of the clamp ring and to guide a flow of the purge gas.

Abstract: A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.

Abstract: A film forming apparatus that includes a mounting table for loading a wafer, a encompassing member surrounding the mounting table and dividing an inside of a process container, an exhaust part that vacuum exhausts the process container, a clamp ring loaded upon an upper space of the encompassing member and lifted from the upper space of the encompassing member while contacting an inner circumference part thereof with an outer circumference of the wafer loaded on the mounting table, and a cylindrical wall extended downward from the clamp ring, formed along a circumference of the clamp ring into a cylinder shape, and positioned between an outer circumference surface of the mounting table and an inner circumference surface of the encompassing member.

Abstract: To provide a plane heater, including a carbon wire heating element CW, in which surface arrangement density of the heating element CW in an outer area is denser than that in an inner area. A power supply terminal unit having connection wires for supplying electricity to the heating element CW is arranged in the center on the back side of a silica glass plate-like member 2. Connection wires 4a and 4b connected with the heating element CW in the inner area are connected with the heating element in the inner area in the center of the silica glass plate-like member. Connection wires 3a and 3b connected with the heating element in the outer area are extended from the center of the silica glass plate-like member toward the outer area and connected with the heating element CW in the outer area, without intersecting the heating element CW in the inner area.

Abstract: A film forming apparatus includes: a chamber for holding a wafer; a susceptor on which the wafer is placed within the chamber; heaters which heat the wafer placed on the susceptor; and a shower plate disposed opposite to the susceptor to inject a film formation processing gas toward the wafer, a main body of the shower plate being made of aluminum or an aluminum alloy. With the apparatus, a film is deposited on the surface of the wafer, the film having a low thermal expansion coefficient, measured at the film deposition temperature, lower by at least about 5×10?6/° C. than a thermal expansion coefficient of the main body of the shower plate. The shower plate has an anodized film having a thickness of 10 ?m or thicker formed on the side of the main body facing the susceptor.

Abstract: The present invention relates to a showerhead that supplies a source gas and a supporting gas for depositing a film into a processing vessel of a film deposition apparatus. The showerhead includes a body which is provided with a gas jetting surface (8). In the showerhead body, there are defined a first diffusion chamber (60) that receives the source gas and diffuses the same, and a second diffusion chamber (62) that receives the supporting gas and diffuses the same. The gas jetting surface has source-gas jetting orifices (10A) that are in communication with the first diffusion chamber, and first supporting-gas jetting orifices (10B) that are in communication with the second diffusion chamber. Each of the first supporting-gas jetting orifices (10B) are formed into a ring shape that adjacently surrounds a corresponding one of the source-gas jetting orifices (10A).

Abstract: [Problem to be Solved] To provide a plane heater including a carbon wire heating element which has an arrangement pattern allowing a heating surface to be a substantially uniform heating temperature plane. [Means to Solve Problem] Surface arrangement densities of a carbon wire heating element CW are different in an inner area and an outer area located in the periphery. The surface arrangement density in the above-mentioned outer area is denser than the surface arrangement density in the inner area. A power supply terminal unit 8 having connection wires for supplying electricity to the above-mentioned heating element CW is arranged in the center on the back side of the above-mentioned silica glass plate-like member 2. The connection wires 4a and 4b connected with the carbon wire heating element in the above-mentioned inner area are connected with the carbon wire heating element CW in the inner area in the center of the above-mentioned silica glass plate-like member.

Abstract: A thermal processing system has a processing vessel 4, a support post 30 stood on the bottom wall of the processing vessel 4, and a support table 32 internally provided with a heating means 38 and supported on the support post 30. A workpiece W is placed on the upper surface of the support table 32 and is subjected to a predetermined thermal process. The upper, the side and the lower surface of the support table 32 are covered with heat-resistant covering members 72, 74 and 76 to prevent the thermal diffusion of metal atoms causative of contamination from the support table 32. thus, various types of contamination, such as metal and organic contamination, can be prevented.

Abstract: A shower head structure (26) includes a shower head main body (78) of a one-piece structure formed in a generally cup shape and having a bottom wall (78A) provided with a plurality of gas injection holes (30A, 30B) formed therein and a side wall (78B) rising from a peripheral portion of the bottom wall. A plurality of gas diffusion chamber forming plates (82A-82C) are housed in the shower head main body (78). A through-hole is formed in a head mounting frame (76) disposed on a ceiling of a processing vessel (24). An upper portion of the side wall (78B) of the shower head main body (78) is inserted into the through-hole, so that a part of the side wall (78B) is exposed to the exterior of the processing vessel. A cooling mechanism (84) is disposed at the upper end portion of the side wall (78B).

Abstract: The present invention relates to a showerhead that supplies a source gas and a supporting gas for depositing a film into a processing vessel of a film deposition apparatus. The showerhead includes a body which is provided with a gas jetting surface (8). In the showerhead body, there are defined a first diffusion chamber (60) that receives the source gas and diffuses the same, and a second diffusion chamber (62) that receives the supporting gas and diffuses the same. The gas jetting surface has source-gas jetting orifices (10A) that are in communication with the first diffusion chamber, and first supporting-gas jetting orifices (10B) that are in communication with the second diffusion chamber. Each of the first supporting-gas jetting orifices (10B) are formed into a ring shape that adjacently surrounds a corresponding one of the source-gas jetting orifices (10A).

Abstract: A shower head structure (26) includes a shower head main body (78) of a one-piece structure formed in a generally cup shape and having a bottom wall (78A) provided with a plurality of gas injection holes (30A, 30B) formed therein and a side wall (78B) rising from a peripheral portion of the bottom wall. A plurality of gas diffusion chamber forming plates (82A-82C) are housed in the shower head main body (78). A through-hole is formed in a head mounting frame (76) disposed on a ceiling of a processing vessel (24). An upper portion of the side wall (78B) of the shower head main body (78) is inserted into the through-hole, so that a part of the side wall (78B) is exposed to the exterior of the processing vessel. A cooling mechanism (84) is disposed at the upper end portion of the side wall (78B).

Abstract: A thermal processing system has a processing vessel 4, a support post 30 stood on the bottom wall of the processing vessel 4, and a support table 32 internally provided with a heating means 38 and supported on the support post 30. A workpiece W is placed on the upper surface of the support table 32 and is subjected to a predetermined thermal process. The upper, the side and the lower surface of the support table 32 are covered with heat-resistant covering members 72, 74 and 76 to prevent the thermal diffusion of metal atoms causative of contamination from the support table 32. thus, various types of contamination, such as metal and organic contamination, can be prevented.

Abstract: A film forming apparatus according to the present invention has a source material supply section, a vaporizer, and a film forming chamber. The vaporizer comprises a nozzle which spays the liquid material supplied from the source material supply section, a vaporization chamber which has one end in which the nozzle opens and a closed other end and in which the misty liquid material sprayed through the nozzle is vaporized to generate the material gas, a heater which heats the vaporization chamber, and an outlet port which opens in the vaporization chamber in the vicinity of the nozzle and through which the material gas is discharged from the vaporization chamber. The closed other end of the vaporization chamber is kept at a long enough distance from the nozzle to allow the liquid source material injected through the nozzle to vaporize.