Abstract: An isolation amplifier of an embodiment includes: a primary circuit including an encoder configured to encode an input signal and output the encoded input signal and an anomaly detection circuit configured to detect anomaly having occurred to the input signal and generate a detection signal; an isolation unit configured to insulate the primary circuit from a secondary circuit; an output circuit configured to generate an output signal corresponding to the input signal; and an anomaly-input sensing-output circuit configured to generate an output signal from the secondary circuit by changing the output signal from the output circuit based on the detection signal.

Abstract: A length from a lower end position of the detection head (11) to a measurement lower limit of the detection head (11) is divided by height positions separated with a predetermined interval pitch. A plurality of virtual level plates (40) are prepared to be placed respectively at the height positions separated with a predetermined interval pitch such that gaps between themselves and each wide face of the mold (1) are not larger than 2 mm respectively at the height positions. Calibration is carried out while using each of the virtual level plates (40) at a corresponding one of the height positions.

Abstract: An image display device includes an image display component, a detector, and an error determination component. The image display component is configured to project on a projection surface a projection image with at least first and second input objects for a user input operation using an indicator. The first and second input objects are adjacently arranged in the projection image with a spacing therebetween. The detector is configured to detect the indicator in a detection range that extends in a height direction of the projection surface. The error determination component is configured to determine that the user input operation of the second input object is erroneously detected in response to the detector continuously detecting the indicator in regions of the detection range corresponding to the first input object, the spacing and the second input object, respectively.

Abstract: A manufacturing method for forming a region into which impurity ions are implanted, and an electrode is coupled to the region, in a self-aligned manner. An oxide film is formed on an n-type semiconductor layer composed of a silicon carbide semiconductor, and then the oxide film on regions in which source and drain regions are to be formed is removed by etching. Impurity ions are implanted into an exposed semiconductor layer and heat treatment is performed for activating the implanted impurity ions. A metal film to serve as ohmic electrodes is formed on the entire surface, and then the oxide film is removed by etching to thereby form a source electrode and a drain electrode. Leaving a part of the oxide film on regions on which source and drain electrodes are to be formed can prevent the oxide film from being deformed during the heat treatment for activation.

Abstract: A manufacturing method for forming a region into which impurity ions are implanted, and an electrode is coupled to the region, in a self-aligned manner. An oxide film is formed on an n-type semiconductor layer composed of a silicon carbide semiconductor, and then the oxide film on regions in which source and drain regions are to be formed is removed by etching. Impurity ions are implanted into an exposed semiconductor layer and heat treatment is performed for activating the implanted impurity ions. A metal film to serve as ohmic electrodes is formed on the entire surface, and then the oxide film is removed by etching to thereby form a source electrode and a drain electrode. Leaving a part of the oxide film on regions on which source and drain electrodes are to be formed can prevent the oxide film from being deformed during the heat treatment for activation.

Abstract: There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance in an amount of 0.1 to 30% by weight in the cathode, wherein the emitter material comprises at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide.

Abstract: A filler sand for a ladle tap hole valve contains 45 to 55 mass % of zircon sand, 30 to 40 mass % of chromite sand and 10 to 20 mass % of silica sand and is blended externally with 0.05 to 5 mass % of carbon black calculated based on the total amount of the sands; or contains 30 to 90 mass % of chromite sand and 10 to 70 mass % of silica sand and is optionally blended externally with 0.05 to 5 mass % of carbon black, wherein 95 mass % or more of the chromite sand consists of particles having diameters falling within a range of 150 to 850 &mgr;m, 60 mass % or more of the chromite sand consists of particles having diameters falling within a range of 212 to 600 &mgr;m, 95 mass % or more of the silica sand consists of particles having diameters falling within a range of 300 to 1180 &mgr;m, and 90 mass % or more of the silica sand consists of particles having diameters falling within a range of 600 to 1180 &mgr;m.

Abstract: There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance, wherein 0.1 to 30% by weight of at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide is dispersed in said emitter material.

Abstract: There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance in an amount of 0.1 to 30% by weight in the cathode, wherein the emitter material comprises at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide.