Abstract: A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, another electrode, an oxide layer between the electrodes, and an oxide layer in contact with the oxide layer between the oxide layer and the electrode. The oxide layer is switchable from the low-resistance state to the high-resistance state by donating oxygen ions to the oxide layer, and from the high-resistance state to the low-resistance state by accepting oxygen ions from the oxide layer. The oxide layer is switchable from the low-resistance state to the high-resistance state by accepting oxygen ions from the oxide layer, and from the high-resistance state to the low-resistance state by donating oxygen ions to the oxide layer.

Abstract: A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, an electrode, an oxide layer between the electrodes, and an oxide layer in contact with the oxide layer between the oxide layer and the electrode. The oxide layer is switchable from the low-resistance state to the high-resistance state by donating oxygen ions to the oxide layer, and from the high-resistance state to the low-resistance state by accepting oxygen ions from the oxide layer. The oxide layer is switchable from the low-resistance state to the high-resistance state by accepting oxygen ions from the oxide layer, and from the high-resistance state to the low-resistance state by donating oxygen ions to the oxide layer.

Abstract: In a method of forming a rare earth-iron-garnet vertically magnetized film by applying a coating solution containing Fe.sup.3+ and rare earth ions on an amphorous substrate to form a coating film, and firing the coating film to cause thermal decomposition and crystallization of the film to form a rare earth-iron-garnet film, the coating solution contains Bi.sup.3+ and ions substitutable for Fe.sup.3+ in the garnet.

Abstract: In a method of manufacturing a magneto-optic recording film wherein a vertically magnetized film of a Bi-substituted rare-earth iron garnet is formed on a substrate, a target consisting of an oxide containing at least Bi atoms, Fe atoms and rare-earth element atoms is sputtered, and the atoms constituting the oxide which are released from the target by sputtering are deposited on the substrate which is held at a temperature of 700.degree. C. or lower, thereby forming the vertically magnetized film consisting of the Bi-substituted rare-earth iron garnet.With this method, a vertically magnetized film of a Bi-substituted rare-earth iron garnet having a large Bi substitution amount x, a very large Faraday rotation angle .theta..sub.F, a sufficiently large coercive force H.sub.c and a sufficiently small absorption coefficient .alpha. can be manufactured, so that a magneto-optic recording film having excellent magneto-optic recording characteristics can be manufactured.