Abstract: An apparatus that performs a film forming process includes: a rotary table having one surface on which substrates are placed and for revolving the substrates around a rotary shaft; a vacuum container configured to accommodate the rotary table and configured such that a space formed between the vacuum container and the one surface is separated into a first processing region and a second processing region, and the substrates repeatedly and alternately pass through the first and second processing regions; a vacuum chuck mechanism provided in the rotary table and including suction ports opened to placement regions on which the substrates are placed, to suction and fix the substrates, and suction flow paths provided to communicate with the suction ports; and a switching mechanism configured to switch an operation status of the vacuum chuck mechanism between a full fixed state and a selective release state.

Abstract: A substrate processing apparatus includes: a boat configured to hold substrates by arranging the substrates in a horizontal posture and in multiple stages along a vertical direction; a plate-shaped member provided along an outer periphery of each substrate of the substrates held by the boat; and a driver configured to change a relative position between the boat and the plate-shaped member in the vertical direction.

Abstract: A substrate processing apparatus includes a processing module including a first sidewall and a second sidewall that are spaced apart in a first horizontal direction, and a transferring module that is configured to transfer a substrate to the processing module and that is disposed adjacent to the first sidewall. The processing module includes a first processing container and a second processing container that are adjacent to each other in a second horizontal direction perpendicular to the first horizontal direction. A maintenance opening common for performing maintenance on the first processing container and the second processing container is provided in the second sidewall. The maintenance opening is provided to include an intermediate position between the first processing container and the second processing container in the second horizontal direction.

Abstract: A substrate processing apparatus includes a vacuum chamber; a rotary table rotatably provided in the vacuum chamber; and a stage configured to rotate together with the rotary table. The rotary table has an opening provided at a position spaced apart from a rotation center of the rotary table. An inner surface of the opening is continuous with an upper surface and a lower surface of the rotary table. The stage is spaced apart from the inner surface of the opening by a clearance.

Abstract: A substrate processing apparatus includes a processing module including a first sidewall and a second sidewall that are spaced apart in a first horizontal direction, and a transferring module that is configured to transfer a substrate to the processing module and that is disposed adjacent to the first sidewall. The processing module includes a first processing container and a second processing container that are adjacent to each other in a second horizontal direction perpendicular to the first horizontal direction. A maintenance opening common for performing maintenance on the first processing container and the second processing container is provided in the second sidewall. The maintenance opening is provided to include an intermediate position between the first processing container and the second processing container in the second horizontal direction.

Abstract: A deposition apparatus includes a processing chamber, a rotary table rotatably provided in the processing chamber and including a coolant flow channel therein, a plurality of stages provided along a rotation direction of the rotary table and each configured to mount a substrate thereon, and a heater configured to heat the substrate mounted on each of the stages. The stages are supported by the rotary table while being thermally isolated from the rotary table.

Abstract: A film forming apparatus includes a processing chamber and a substrate support provided in the processing chamber. The substrate support includes a recess in which a substrate is placed. The recess includes a projection at a bottom surface thereof. The projection is provided along an outer periphery of the substrate placed in the recess.

Abstract: A film forming method includes executing a first cycle, which comprises adsorbing a raw material gas onto a substrate and reacting the raw material gas adsorbed onto the substrate with a reaction gas, a first number of times, supplying an adsorption inhibitor, which inhibits adsorption of the raw material gas on to the substrate, in a larger amount to a peripheral edge portion of the substrate than to a central portion, and executing a second cycle, which comprises the executing of the first cycle and the supplying of the adsorption inhibitor, a second number of times.

Abstract: A film deposition apparatus includes a vacuum chamber, a rotary table in the vacuum chamber, and configured to mount multiple substrates along a circumferential direction, a first processing region, a separation region, and a second processing region provided in this order from an upstream side to a downstream side in a rotation direction of the rotary table. A separation gas supply and a third exhaust port are provided in the separation region. The separation gas supply supplies a separation gas to separate a first process gas supplied to the first processing region and a second process gas supplied to the second processing region. The third exhaust port exhausts the separation gas supplied to the separation region. The separation gas supply includes first and second discharge ports provided such that the third exhaust port is between the first and second discharge ports in the circumferential direction of the rotary table.

Abstract: A substrate processing apparatus includes a vacuum chamber, a rotary table in the vacuum chamber, a stage, and a support that supports at least either the rotary table or stage, the support having a thermal expansion coefficient greater than the rotary table or stage that is supported. The rotary table or stage includes a protruding portion protruding toward the support. The support includes a base portion, an insertion portion protruding from a center of the base portion and being inserted into the protruding portion, and an outer edge protruding portion protruding from the base portion. An outer clearance formed between the outer edge protruding portion and the protruding portion is set to be smaller than an inner clearance formed between the insertion portion and the protruding portion at a first temperature, and the outer clearance becomes greater than the inner clearance at a second temperature higher than the first temperature.

Abstract: A deposition apparatus according to one aspect of the present disclosure includes a vacuum vessel, a rotary table rotatably disposed in the vacuum vessel, a heating device provided below the rotary table, and a radiation adjusting member. The rotary table is configured such that multiple substrates can be placed on the rotary table along a circumferential direction of the rotary table. The heating device is configured to heat the multiple substrates by thermal radiation, and the radiation adjusting member is configured to adjust an amount of radiant heat from the heating device to the plurality of substrates.

Abstract: A substrate heating apparatus includes: an induction heating coil; a holding tray including a substrate holder that places and holds a substrate thereon, and configured to be induction-heated by the induction heating coil; and a rotary table configured to support the holding tray and provided to be freely rotatable.

Abstract: A substrate processing apparatus includes: a processing chamber; a rotary table rotatably provided inside the processing chamber; a stage that is rotatable relative to the rotary table at a position spaced apart from a rotation center of the rotary table; a process gas supplier provided above the rotary table; a separation gas supplier to supply a separation gas to separation regions, each of the separation regions being adjacent to a processing region; and a gas exhauster including exhaust ports communicating with an inside of the processing chamber, wherein the exhaust ports are provided in the processing region between the separation regions and are provided above the rotary table.

Abstract: A rotation driving mechanism includes a turntable configured to rotate about a first axis, and a rotating plate disposed along a circumferential direction of the turntable and configured to rotate about a second axis independently of a rotation of the turntable. A driving plate is coaxially disposed with the first axis and is rotatable differently in rotational direction and rotational speed from the rotation of the turntable. A trajectory plate is fixed to the driving plate and disposed in the vicinity of the second axis of the rotating plate. The trajectory plate includes a rolling trajectory groove in a surface. The trajectory groove has a curved shape in a plan view. A horizontal rotating member is coupled to and fixed to the rotating plate and engaged with the rolling trajectory groove. The horizontal rotating member rotates the rotating plate by moving and rolling through the rolling trajectory groove.

Abstract: There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

Abstract: An apparatus for performing a film forming process on a substrate, includes a rotary table, a separation region including a separation gas supply configured to supply a separation gas and a main ceiling surface configured to form a separation gas gap for the separation gas, a central region including a central ceiling surface arranged around the rotation center, a rotary shaft exhaust passage made of a tubular body and connected to the rotary table to rotate the rotary table about the rotation center, the rotary shaft exhaust passage having an exhaust path formed therein, a ceiling surface side exhaust passage formed to vertically penetrate a member constituting the central region, a first exhaust port configured to exhaust the first processing gas to one of the two exhaust passages, and a second exhaust port configured to exhaust the second processing gas to the other one of the two exhaust passages.

Abstract: A substrate processing apparatus includes a processing chamber; a rotary table that is rotatably provided in the processing chamber; a heater provided below the rotary table; a partition, provided between the rotary table and the heater with a gap with respect to a lower surface of the rotary table, configured to partition the processing chamber into a first region in which the rotary table is provided and a second region in which the heater is provided; a first processing region in which a first processing gas is supplied to an upper surface of the rotary table; a second processing region in which a second processing gas is supplied to the upper surface of the rotary table; and a separation region in which a separation gas for separating the first and second processing gas is supplied to the upper surface of the rotary table.

Abstract: A film forming apparatus includes: substrate processing chambers, which is formed by partitioning a space in a processing container in a circumferential direction when viewed from top, and in each of which a substrate is received and a receiving port for processing gases is formed to face a central portion of the processing container; a gas supply including a rotating body provided in the central portion of the processing container, and having a first gas supply hole and a second gas supply hole which are formed at different positions on a side peripheral surface of the rotating body along a circumferential direction; and a rotary mechanism configured to rotate the rotating body around a vertical axis such that a first processing gas and a second processing gas are switched and repeatedly supplied to the substrate processing chambers via the receiving ports, respectively.

Abstract: A substrate processing apparatus includes: a rotary table provided in a processing container; a rotation mechanism configured to rotate the rotary table; recesses provided on an upper surface of the rotary table along a rotation direction of the rotary table and configured to accommodate substrates, respectively; a processing gas supply provided above the rotary table and configured to supply a processing gas onto the rotary table to process each of the substrates; a heater configured to heat the rotary table; a support configured to support the substrates in upper regions above the recesses so that the heater heats the substrates before being accommodated in the recesses; and an elevating mechanism configured to raise and lower the support relative to the rotary table so that the substrates are collectively moved from the upper regions into the recesses.

Abstract: An apparatus that performs a film forming process includes: a rotary table having one surface on which substrates are placed and for revolving the substrates around a rotary shaft; a vacuum container configured to accommodate the rotary table and configured such that a space formed between the vacuum container and the one surface is separated into a first processing region and a second processing region, and the substrates repeatedly and alternately pass through the first and second processing regions; a vacuum chuck mechanism provided in the rotary table and including suction ports opened to placement regions on which the substrates are placed, to suction and fix the substrates, and suction flow paths provided to communicate with the suction ports; and a switching mechanism configured to switch an operation status of the vacuum chuck mechanism between a full fixed state and a selective release state.