Abstract: A deposition apparatus according to one aspect of the present disclosure includes a vacuum vessel, a rotary table rotatably disposed in the vacuum vessel, a heating device provided below the rotary table, and a radiation adjusting member. The rotary table is configured such that multiple substrates can be placed on the rotary table along a circumferential direction of the rotary table. The heating device is configured to heat the multiple substrates by thermal radiation, and the radiation adjusting member is configured to adjust an amount of radiant heat from the heating device to the plurality of substrates.

Abstract: A rotation driving mechanism includes a turntable configured to rotate about a first axis, and a rotating plate disposed along a circumferential direction of the turntable and configured to rotate about a second axis independently of a rotation of the turntable. A driving plate is coaxially disposed with the first axis and is rotatable differently in rotational direction and rotational speed from the rotation of the turntable. A trajectory plate is fixed to the driving plate and disposed in the vicinity of the second axis of the rotating plate. The trajectory plate includes a rolling trajectory groove in a surface. The trajectory groove has a curved shape in a plan view. A horizontal rotating member is coupled to and fixed to the rotating plate and engaged with the rolling trajectory groove. The horizontal rotating member rotates the rotating plate by moving and rolling through the rolling trajectory groove.

Abstract: A film deposition apparatus includes a process chamber, and a turntable in the process chamber to receive a substrate. An exhaust port is provided outside the turntable to evacuate the process chamber. An exhaust box is provided in a space between a ceiling surface of the process chamber and the surface of the turntable so as to surround a certain region along the circumferential direction and a radial direction by side walls so as to include a region upstream of the exhaust port in a rotational direction of the turntable. A gas supply unit to supply a gas into the exhaust box is provided. The exhaust box includes an outflow port in a side wall closest to the exhaust port such that a conductance of a gas flowing from the exhaust box increases with increasing distance from the exhaust port.

Abstract: A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.

Abstract: A film forming apparatus includes: a stage configured to mount the substrate thereon; a raw material gas supply part that supplies a raw material gas to the substrate and adsorb the raw material gas onto the substrate, and includes divided supply portions configured to independently supply the raw material gas toward gas reception regions; raw material gas supply lines configured to supply the raw material gas in parallel toward the raw material gas supply part; concentration adjustment gas supply lines configured to supply a concentration adjustment gas for adjusting a concentration of the raw material gas toward the raw material gas supply part in a parallel relationship; and a reaction gas supply part configured to supply the reaction gas reacting with the raw material gas adsorbed onto the substrate to generate a reaction product constituting the thin film.

Abstract: A substrate processing apparatus includes a mounting stand installed to rotate about a rotation shaft extending along a rotary shaft of a rotary table and configured to hold a substrate, and a magnetic gear mechanism including a driven gear configured to rotate the mounting stand about the rotation shaft and a driving gear configured to drive the driven gear. The driven gear is connected to the mounting stand via the rotation shaft and installed to rotate in such a direction as to rotate the mounting stand. The driving gear is disposed in a state in which the driving surface faces the driven surface passing through a predetermined position on a movement orbit of the driven gear moving along with the rotation of the rotary table.

Abstract: A relief valve includes a first valve body having an annular shape including a peripheral edge portion, which is pressed against a hole edge portion of the communication hole, and an opening in a central portion of the annular shape; a second valve body pressed against a hole edge portion of the opening of the first valve body so as to close the opening; a first spring including a compression spring or a tension spring for pressing the first valve body against the hole edge portion of the communication hole; and a second spring including a compression spring or a tension spring for pressing the second valve body against the hole edge portion of the opening, wherein the first region and the second region communicate with each other.

Abstract: An apparatus for forming a thin film by repeating, plural times, a cycle including supplying and adsorbing a precursor gas onto a substrate and generating a reaction product by allowing the precursor gas on the substrate to react with a reaction gas, which includes: a main precursor gas supply part for supplying the precursor gas; a reaction gas supply part for supplying the reaction gas; an adjustment-purpose precursor gas supply part for supplying an adjustment-purpose precursor gas to adjust an in-plane film thickness distribution of the thin film; and a controller for outputting a control signal to execute a step of forming the thin film using the main precursor gas supply part and the reaction gas supply part, and subsequently a step of supplying the adjustment-purpose precursor gas from the adjustment-purpose precursor gas supply part to compensate for a film thickness of a portion having a relatively thin film thickness.

Abstract: There is provided a substrate processing apparatus for processing a substrate by supplying a processing gas to the substrate while revolving the substrate, the substrate processing apparatus including: a rotary table installed within a processing container; a rotating mechanism configured to rotate the rotary table; a support part installed in a rotary shaft of the rotary table below the rotary table; an opening portion formed in the rotary table to correspond to a mounting position where the substrate is mounted; a mounting part rotatably supported by the support part through the opening portion, and configured to mount the substrate thereon such that a height level of an upper surface of the substrate coincides with a height level of an upper surface of the rotary table; and a rotating mechanism configured to rotate the mounting part.

Abstract: A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.

Abstract: A substrate processing apparatus includes a process chamber in which etching by a corrosive gas is performed to remove a film formed therein after a film formation process, a susceptor disposed in the process chamber and having a substrate loading portion, a stationary shaft passing through the susceptor, a first securing member securing the susceptor at an upper side, a second securing member securing the susceptor at a lower side, a pressing member disposed below the susceptor to urge the stationary shaft in a downward direction while urging the second securing member in an upward direction, and a stopping member formed above the susceptor and engaged with the stationary shaft to urge the first securing member in cooperation with the pressing member. The susceptor, the first securing member and the stopping member are made of a material having corrosion resistance higher than the pressing member.

Abstract: There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

Abstract: There is provided a substrate processing apparatus which supplies a processing gas onto a surface of a substrate on a substrate mounting table from a gas nozzle. The apparatus includes: a ring member installed in a leading end side of to the gas nozzle rather than a through-hole and including an inner peripheral surface on which the gas nozzle inserted into the through-hole is mounted, at least one of contours of an outer peripheral surface and the inner peripheral surface being set to a spiral curve or a polygon obtained by linearly approximating the curve; and a pedestal part on which the ring member is mounted at left and right positions spaced apart from each other in a circumference direction of the ring member. A height of a position at which the gas nozzle is supported by the ring member is adjusted with a rotation of the ring member.

Abstract: A substrate processing apparatus includes a mounting stand installed to rotate about a rotation shaft extending along a rotary shaft of a rotary table and configured to hold a substrate, and a magnetic gear mechanism including a driven gear configured to rotate the mounting stand about the rotation shaft and a driving gear configured to drive the driven gear. The driven gear is connected to the mounting stand via the rotation shaft and installed to rotate in such a direction as to rotate the mounting stand. The driving gear is disposed in a state in which the driving surface faces the driven surface passing through a predetermined position on a movement orbit of the driven gear moving along with the rotation of the rotary table.

Abstract: There is provided a substrate processing apparatus of performing a process by supplying a processing gas on a substrate while rotating the substrate mounted on a rotary table in a vacuum container, which includes: a container main body used as a part including a bottom portion of the vacuum container; a cover part configured to be detachably installed with respect to the container main body to open and close the container main body, the cover part being used as a part including a ceiling portion of the vacuum container; a pillar installed in one of the cover part and the container main body such that the pillar penetrates through a central portion of the rotary table when the cover part is installed on the container main body, and configured to support the cover part with respect to the container main body when the inside of the vacuum container is vacuum-exhausted.

Abstract: A gas processing apparatus includes a process chamber for installing a process target therein, a through-hole being air-tightly in communication with a gas supply pipe, an injector for supplying gas into the process chamber, a sleeve being engaged to an outer peripheral surface of the injector inside the through-hole, an annular sealing member engaged to the outer peripheral surface of the injector, an engagement surface facing the sealing member, and a pressing part for pressing the sleeve toward the outer side of the process chamber. The pressing part compresses the sealing member by exerting pressure to the engagement surface from an end surface of the sleeve toward the sealing member, so that an inside of the injector and an outside of the injector are air-tightly sealed.

Abstract: There is provided a substrate processing apparatus for processing a substrate by supplying a processing gas to the substrate while revolving the substrate, the substrate processing apparatus including: a rotary table installed within a processing container; a rotating mechanism configured to rotate the rotary table; a support part installed in a rotary shaft of the rotary table below the rotary table; an opening portion formed in the rotary table to correspond to amounting position where the substrate is mounted; a mounting part rotatably supported by the support part through the opening portion, and configured to mount the substrate thereon such that a height level of an upper surface of the substrate coincides with a height level of an upper surface of the rotary table; and a rotating mechanism configured to rotate the mounting part.

Abstract: There is disclosed a film deposition apparatus and a film deposition method for depositing a film on a substrate by carrying out cycles of supplying in turn at least two source gases to the substrate in order to form a layer of a reaction product, and a computer readable storage medium storing a computer program for causing the film deposition apparatus to carry out the film deposition method.

Abstract: There is provided a substrate processing apparatus of performing a process by supplying a processing gas on a substrate while rotating the substrate mounted on a rotary table in a vacuum container, which includes: a container main body used as a part including a bottom portion of the vacuum container; a cover part configured to be detachably installed with respect to the container main body to open and close the container main body, the cover part being used as a part including a ceiling portion of the vacuum container; a pillar installed in one of the cover part and the container main body such that the pillar penetrates through a central portion of the rotary table when the cover part is installed on the container main body, and configured to support the cover part with respect to the container main body when the inside of the vacuum container is vacuum-exhausted.

Abstract: There is provided a substrate processing apparatus which supplies a processing gas onto a surface of a substrate on a substrate mounting table from a gas nozzle. The apparatus includes: a ring member installed in a leading end side of to the gas nozzle rather than a through-hole and including an inner peripheral surface on which the gas nozzle inserted into the through-hole is mounted, at least one of contours of an outer peripheral surface and the inner peripheral surface being set to a spiral curve or a polygon obtained by linearly approximating the curve; and a pedestal part on which the ring member is mounted at left and right positions spaced apart from each other in a circumference direction of the ring member. A height of a position at which the gas nozzle is supported by the ring member is adjusted with a rotation of the ring member.