Patents by Inventor Manabu KAKAZU

Manabu KAKAZU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Three-dimensional memory device containing channels with laterally pegged dielectric cores
    Patent number: 10964715
    Abstract: A three-dimensional memory device includes a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectric core. The vertical semiconductor channel may be a single crystalline semiconductor channel.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: March 30, 2021
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Manabu Kakazu, Takashi Yuda, Yuji Fukano
  • Three-dimensional memory device containing channels with laterally pegged dielectric cores
    Patent number: 10748925
    Abstract: A three-dimensional memory device includes a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectric core. The vertical semiconductor channel may be a single crystalline semiconductor channel.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: August 18, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Masanori Tsutsumi, Manabu Kakazu, Raghuveer S. Makala, Senaka Kanakamedala
  • THREE-DIMENSIONAL MEMORY DEVICE CONTAINING CHANNELS WITH LATERALLY PEGGED DIELECTRIC CORES AND METHODS FOR MAKING THE SAME
    Publication number: 20200251485
    Abstract: A three-dimensional memory device includes a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectric core. The vertical semiconductor channel may be a single crystalline semiconductor channel.
    Type: Application
    Filed: February 5, 2019
    Publication date: August 6, 2020
    Inventors: Manabu KAKAZU, Takashi YUDA, Yuji FUKANO
  • THREE-DIMENSIONAL MEMORY DEVICE CONTAINING CHANNELS WITH LATERALLY PEGGED DIELECTRIC CORES AND METHODS FOR MAKING THE SAME
    Publication number: 20200251486
    Abstract: A three-dimensional memory device includes a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectric core. The vertical semiconductor channel may be a single crystalline semiconductor channel.
    Type: Application
    Filed: February 5, 2019
    Publication date: August 6, 2020
    Inventors: Masanori TSUTSUMI, Manabu KAKAZU, Raghuveer S. MAKALA, Senaka KANAKAMEDALA