Abstract: A pressure sensitive sensor includes: a first conductive member formed into a long shape, the first conductive member having conductivity and elasticity; a second conductive member internally including a long space to arrange the first conductive member, the second conductive member having conductivity and elasticity; and an insulating member having an insulating property and elasticity, the insulating member holding the first conductive member to separate the first conductive member from the second conductive member, the insulating member being movable relative to one or both of the first conductive member and the second conductive member.

Abstract: A pressure sensitive sensor includes: a first conductive member formed into a long shape, the first conductive member having conductivity and elasticity; a second conductive member internally including a long space to arrange the first conductive member, the second conductive member having conductivity and elasticity; and an insulating member having an insulating property and elasticity, the insulating member holding the first conductive member to separate the first conductive member from the second conductive member, the insulating member being movable relative to one or both of the first conductive member and the second conductive member.

Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??)??(2), and 0.5<?<0.9??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.

Abstract: An epitaxial wafer for a light emitting diode has: a light-emitting portion having a n-type cladding layer, a p-type cladding layer and an active layer formed between the n-type cladding layer and the p-type cladding layer, the light-emitting portion being formed on a n-type substrate; and a p-type GaP current spreading layer formed on the light-emitting portion. The p-type GaP current spreading layer is doped with Mg and has a root mean square roughness Rms of 15 nm to 5 ?m on its surface.

Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??) ??(2), and 0.5<?<0.9 ??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.