Abstract: A capacitor of the present disclosure includes a first electrode, a second electrode, and a dielectric. The dielectric is placed between the first electrode and the second electrode. The dielectric includes a first layer and a second layer. The first layer includes a diamine. The second layer includes tin(IV) sulfide. The first layer and the second layer are stacked alternately in a particular direction intersecting a surface of the first electrode facing the second electrode. An electrical conductivity of the dielectric in the particular direction at 25° C. is 1×10?10 S/cm or less.

Abstract: A capacitor of the present disclosure includes a first electrode, a second electrode, and a dielectric. The second electrode is disposed to face a principal surface of the first electrode. The dielectric is disposed between the first electrode and the second electrode. The dielectric is in contact with the first electrode and the second electrode. A surface of the second electrode extends, for example, parallel to a surface of the first electrode, the surfaces each being in contact with the dielectric. An electrical conductivity ?x of the dielectric in a particular direction perpendicular to the principal surface and an electrical conductivity ?y of the dielectric in a direction perpendicular to the particular direction satisfy a relation ?x/?y?0.01.

Abstract: A dielectric of the present disclosure includes a tantalum compound containing fluorine and oxygen and being amorphous, and is advantageous in terms of achieving a high dielectric constant.

Abstract: A dielectric includes a composite oxide. The composite oxide has composition represented by CexAl1-xOk and is amorphous. In the composition represented by CexAl1-xOk, a requirement 0.400?x<0.900 is satisfied. The symbol k is a value for maintaining electroneutrality of the composite oxide.

Abstract: In a house having a standard two-story building height, an inner living space is provided, which gives a feeling of spaciousness and openness. A house includes: a first floor; a second floor; a higher second floor as a skip floor positioned substantially a half story higher than the second floor and being led from the second floor; and a gable roof provided above these floors. The higher second floor is provided along a gable end wall of the gable roof on at least one side to spread across a full width of the gable end wall. An upper area of the higher second floor is integrated with an attic space under the gable roof.

Abstract: A method for producing a thin film according to the present disclosure comprises a step of forming the thin film on a substrate using a target. The target is formed of a mixture containing a first material and a second material. The first material has a composition represented by ATiO3 (where A is at least one selected from the group consisting of Ba and Sr). The second material has a composition represented by EH2 (where E is at least one selected from the group consisting of Ti and Zr). The thin film is formed of a first oxide containing A, Ti, and O. Some of oxide ions contained in the first oxide have been replaced by hydride ions.

Abstract: The desorbing process of the present disclosure includes a step of bringing a solution containing a hydrogenated aromatic compound, at least one of [P((CH2)mCH3)3((CH2)nCH3) (5?m?24, 13?n?24)]+ and [N((CH2)mCH3)3((CH2)nCH3) (5?m?24, 13?n?24)]+, and an anion into contact with an anode; and desorbing hydrogen from the hydrogenated aromatic compound.

Abstract: A hydrogen desorption method includes a step of bringing a liquid containing an alicyclic saturated hydrocarbon having a tertiary carbon atom bearing a saturated hydrocarbon side chain, a quinone, and an electrolyte into contact with a anode and a step of desorbing hydrogen from the alicyclic saturated hydrocarbon having a tertiary carbon atom bearing a saturated hydrocarbon side chain.

Abstract: The desorbing process of the present disclosure includes a step of bringing a solution containing a hydrogenated aromatic compound, at least one of [P((CH2)mCH3)3((CH2)nCH3) (5?m?24, 13?n?24)]+ and [N((CH2)mCH3)3((CH2)nCH3) (5?m?24, 13?n?24)]+, and an anion into contact with an anode; and desorbing hydrogen from the hydrogenated aromatic compound.

Abstract: A hydrogen desorption method includes a step of bringing a liquid containing an alicyclic saturated hydrocarbon having a tertiary carbon atom bearing a saturated hydrocarbon side chain, a quinone, and an electrolyte into contact with a anode and a step of desorbing hydrogen from the alicyclic saturated hydrocarbon having a tertiary carbon atom bearing a saturated hydrocarbon side chain.

Abstract: A method of producing a GaAs single crystal substrate comprises the steps of conducting a first-stage annealing by vacuum-sealing a GaAs single crystal wafer and arsenic in a heat-resistant vessel and heating the wafer to a temperature of 1050.degree. to 1150.degree. C. while exposing it to arsenic vapor pressure, cooling the wafer to room temperature at a cooling rate of 1.degree.-25.degree. C./min., removing the wafer from the vessel, etching the wafer and placing it in another vessel, conducting a second-stage annealing by heating the wafer to a temperature of 910.degree. to 1050.degree. C. in a non-oxidizing atmosphere, cooling the wafer to room temperature at a cooling rate of 1.degree.-25.degree. C./min., removing it from the vessel, etching the wafer, conducting a third-stage annealing by vacuum-sealing the wafer and arsenic in the heat-resistant vessel and heating the wafer to a temperature of 520.degree.-730.degree. C. while exposing it to arsenic vapor, and cooling the wafer at least down to 400.