Abstract: A motion state monitoring system, a training support system, a motion state monitoring method, and a program capable of suitably managing measurement results according to an attaching direction of a sensor are provided. A motion state monitoring system according to the present disclosure monitors a motion state of a target part of a subject's body. The motion state monitoring system includes an acquisition unit, an attaching direction detection unit, and a control processing unit. The acquisition unit acquires sensing information of a sensor attached to the target part. The attaching direction detection unit detects an attaching direction of the sensor. The control processing unit outputs information related to the sensing information in association with the attaching direction.

Abstract: An ECU executes processing including a step of counting up a duration Ntime when a Ready-On state is brought, and a shift position is an N position, a step of counting up a duration Not_Ntime when the duration Ntime is equal to or greater than a threshold value A, the duration Ntime is greater than a threshold value C, and the shift position is other than the N position, a step of resetting the duration Ntime and the duration Not_Ntime to initial values in a case where the duration Not_Ntime is greater than a threshold value D, and a step of executing warning processing when the duration Ntime is greater than the threshold value A.

Abstract: An ECU executes processing including a step of counting up a duration Ntime when a Ready-On state is brought, and a shift position is an N position, a step of counting up a duration Not_Ntime when the duration Ntime is equal to or greater than a threshold value A, the duration Ntime is greater than a threshold value C, and the shift position is other than the N position, a step of resetting the duration Ntime and the duration Not_Ntime to initial values in a case where the duration Not_Ntime is greater than a threshold value D, and a step of executing warning processing when the duration Ntime is greater than the threshold value A.

Abstract: A control device of a vehicle integrates an amount of degradation of positive electrode capacity of a storage battery during drive of a first predetermined distance. When an integrated value of the amount of degradation is equal to or larger than a first predetermined value, the control device performs a degradation suppressing control to suppress charging and discharging of the storage battery in a low state of charge range where a state of charge of the storage battery is lower than a predetermined ratio that accelerates degradation of the positive electrode capacity, compared with charging and discharging of the storage battery in the low state of charge range in an ordinary control.

Abstract: An angular velocity sensor includes coupling beams supported afloat by highly flexible support beams so as to be movable relative to a substrate, with the support beams being flexible in the x-axis and a y-axis directions and being symmetrical with respect to the center of the sensor. A first vibrator and a second vibrator are supported by respective coupling beams through spring beams that are highly flexible in the x-direction, with the spring beams being symmetrical with respect to the x-axis passing through the center symmetrical to each other with respect to the y-axis passing through the center. Drive electrodes drive at least one of the first vibrator and the second vibrator to vibrate in the x-direction. First displacement detection electrodes detect a y-directional vibration of the first vibrator and second displacement detection electrodes detect a y-directional vibration of the second vibrator.

Abstract: A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; a semiconductor element disposed on the front surface of the semiconductor substrate and including an electrode; a PHS for dissipating heat generated in the semiconductor element, the PHS including a metal layer and disposed on the rear surface of the semiconductor substrate; a via-hole including a through-hole penetrating through the semiconductor substrate from the front surface to the rear surface and having an inner surface, and a metal disposed in the through-hole and contacting the PHS; and an air-bridge wiring including a metal film and having first and second portions, the air-bridge contacting the electrode of the semiconductor element at the first portion and contacting the metal of the via-hole at the second portion.

Abstract: An electrode lead of a transistor extends beyond other electrode leads of the transistor, is disposed adjacent to the corresponding electrode, and is disposed outside the other electrode leads for heat radiation. A wider part of the electrode lead may have a via hole or a thick metal plating for heat radiation. Further, the electrode is preferably grounded and is connected to an external input terminal to which heat is transferred.

Abstract: A high power bipolar transistor includes bipolar transistors disposed on a substrate; a signal line including a pad for inputting a driving signal and a signal transmission line continuous with the pad commonly connecting base electrodes of the bipolar transistors; and a bypass line having a first end connected to the signal transmission line proximate to the pad and a second end connected to the signal transmission line remote from the pad. Approximately equal powers are supplied to the transistors connected to any position on the base feed line so that the operation of the respective transistors is uniform, improving output power and efficiency.

Abstract: In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.