Abstract: An optical wavelength meter includes: an interferometer; a reference optical source unit with a laser configured to oscillate in a multi-longitudinal mode; and a signal processor configured to calculate a wavelength of a input beam with reference to interference fringe information of reference beam and interference fringe information of the input beam obtained from the interferometer.

Abstract: An electromagnetic shielding tube has a resin inner layer as the innermost layer, a resin outer layer as the outermost layer, and a metal metal-layer between the inner layer and the outer layer. The bonding strength between the outer layer and the metal layer is made weaker with respect to the bonding strength between the inner layer and the metal layer. For example, while an adhesive layer is provided between the inner layer and the metal layer, the outer layer can be directly extrusion coated onto the metal layer without providing an adhesive layer or the like between the outer layer and the metal layer.

Abstract: An object of the invention is to automatically remove noise out of an input spectrum data while rounding in spectral shape is being suppressed. The spectrum data correction system wherein a noise quantity is detected on the basis of a difference in value between an extremal point of measurement data-blocks making up input spectrum data, and a mean value of measurement data-blocks in the vicinity of the extremal point, and a count of moving-average points of measurement data-blocks subjected to moving average processing is controlled according to the noise quantity, the spectrum data correction system comprises means for using an optical power, detected by a photo-detector of an optical spectrum analyzer, as the measurement data-block, thereby controlling the count of the moving-average points of the measurement data-blocks according to magnitude of a signal level of the measurement data-block.

Abstract: An optical wavelength meter includes: an interferometer; a reference optical source unit with a laser configured to oscillate in a multi-longitudinal mode; and a signal processor configured to calculate a wavelength of a input beam with reference to interference fringe information of reference beam and interference fringe information of the input beam obtained from the interferometer.

Abstract: An improvement is added to a spectroscope for performing wavelength dispersion of measured light with a wavelength dispersion element and receiving the light at a light reception element. The spectroscope has a first compound lens made up of a plurality of lenses for converting measured light into parallel light and emitting the parallel light to the wavelength dispersion element; a second compound lens made up of a plurality of lenses for gathering the measured light subjected to the wavelength dispersion in the wavelength dispersion element and causing the light reception element to receive the light; and a base for fixing the wavelength dispersion element, the first compound lens, and the second compound lens. The linear expansion coefficient of the compound focal length of the first compound lens, the linear expansion coefficient of the compound focal length of the second compound lens, and the linear expansion coefficient of a material forming the base are substantially equal.

Abstract: A light guide may include a light stop part that is formed at a first end of an optical fiber, the light stop part stopping a light that is incident at a second end of the optical fiber and is transmitted through the optical fiber, and a slit part that is formed in the light stop part, the slit part being configured to pass the light that is incident at the second end of the optical fiber and is transmitted through the optical fiber.

Abstract: A semiconductor device having a semiconductor substrate, a first impurity region including a first conductive impurity formed in the semiconductor substrate, a first transistor and a second transistor formed in the first impurity region, a first stress film and a second stress having a first stress over the first transistor a and the second transistor, and a third stress film having a second stress different from the first stress provided in the first impurity region between the first stress film and the second stress film.

Abstract: An object of the invention is to automatically remove noise out of an input spectrum data while rounding in spectral shape is being suppressed. The spectrum data correction system wherein a noise quantity is detected on the basis of a difference in value between an extremal point of measurement data-blocks making up input spectrum data, and a mean value of measurement data-blocks in the vicinity of the extremal point, and a count of moving-average points of measurement data-blocks subjected to moving average processing is controlled according to the noise quantity, the spectrum data correction system comprises means for using an optical power, detected by a photo-detector of an optical spectrum analyzer, as the measurement data-block, thereby controlling the count of the moving-average points of the measurement data-blocks according to magnitude of a signal level of the measurement data-block.

Abstract: A spectroscope includes a diffraction grating having a plurality of ruled parallel lines; and a plurality of spectroscopic paths, each of which has a collimator for collimating incident light, emits the collimated light to the diffraction grating, and emits return light, which returns from the diffraction grating, through a slit provided on the path. In the spectroscope, measured light is emitted through the plurality of spectroscopic paths so as to extract light which is included in the measured light and has a predetermined wavelength; and the collimators of the spectroscopic paths are arranged so that irradiation areas of light emitted from the collimators are offset from each other at least in a direction along the ruled parallel lines. The collimators of the spectroscopic paths may be arranged so that incident angles of light emitted from the collimators coincide with each other.

Abstract: An improvement is added to a spectroscope for performing wavelength dispersion of measured light with a wavelength dispersion element and receiving the light at a light reception element. The spectroscope has a first compound lens made up of a plurality of lenses for converting measured light into parallel light and emitting the parallel light to the wavelength dispersion element; a second compound lens made up of a plurality of lenses for gathering the measured light subjected to the wavelength dispersion in the wavelength dispersion element and causing the light reception element to receive the light; and a base for fixing the wavelength dispersion element, the first compound lens, and the second compound lens. The linear expansion coefficient of the compound focal length of the first compound lens, the linear expansion coefficient of the compound focal length of the second compound lens, and the linear expansion coefficient of a material forming the base are substantially equal.

Abstract: A spectroscope includes a diffraction grating having a plurality of ruled parallel lines; and a plurality of spectroscopic paths, each of which has a collimator for collimating incident light, emits the collimated light to the diffraction grating, and emits return light, which returns from the diffraction grating, through a slit provided on the path. In the spectroscope, measured light is emitted through the plurality of spectroscopic paths so as to extract light which is included in the measured light and has a predetermined wavelength; and the collimators of the spectroscopic paths are arranged so that irradiation areas of light emitted from the collimators are offset from each other at least in a direction along the ruled parallel lines. The collimators of the spectroscopic paths may be arranged so that incident angles of light emitted from the collimators coincide with each other.

Abstract: A semiconductor device having a semiconductor substrate, a first impurity region including a first conductive impurity formed in the semiconductor substrate, a first transistor and a second transistor formed in the first impurity region, a first stress film and a second stress having a first stress over the first transistor a and the second transistor, and a third stress film having a second stress different from the first stress provided in the first impurity region between the first stress film and the second stress film.

Abstract: A p-channel MOS transistor capable of lowering the height of a gate electrode, suppressing penetration of boron through a gate insulating film, and reducing a source/drain parasitic capacitance. A method for manufacturing a semiconductor device comprises the steps of: (a) forming a gate insulating film on each surface of active regions including an n-type active region; (b) depositing a poly-Si gate electrode layer on the gate insulating film; (c) implanting amorphousizing ions, Ge or Si, to transform an upper portion of the gate electrode layer into amorphous phase; (d) patterning the gate electrode layer to form a gate electrode; (e) forming side wall spacers on side walls of the gate electrode at a temperature not crystallizing the amorphous layer; and (f) implanting p-type impurity ions, B, into the n-type active region by using as a mask the gate electrode and the side wall spacers, to form high concentration source/drain regions.

Abstract: A gate insulator film and a gate electrode are formed on a semiconductor substrate, and then a layered stack of a SiO2 film and a SiN film is formed on the entire surface. Subsequently, sidewalls made of polysilicon film are formed adjacent to the gate electrode via the layered stack of the SiO2 film and the SiN film. Then, using as a mask the gate electrode, portions of the layered stack adjacent to the gate electrode, and the sidewalls, an ion dopant is implanted into a device active region to thereby form source/drains therein, and the sidewalls are then removed. At this stage, since the gate insulator film is completely covered with the layered stack, the gate insulator film is not ablated or retreated even on a device isolation insulator film.

Abstract: In order to provide a multi-path monochromator capable of reducing the size of optical parts with a high resolution and a wide dynamic range, the multi-path monochromator has a lens 2 used as a first collimator for converting an incident light into a parallel light, a diffraction grating 4 for diffracting an output light outputted from the lens 2, plane mirrors 3 and 5 for reflecting a diffraction light diffracted by the diffraction grating 4 to return the diffraction light back to a same path, a parabolic mirror 7 used as a second collimator for collecting a diffraction light which is again diffracted by the diffraction grating into which a reflected light is again outputted from the plane mirror, and an output slit positioned at a focal position of the parabolic mirror 7. The parabolic mirror 7 used as the second collimator has a focal length which is longer than a focal length of the lens used as the first collimator.

Abstract: A method of manufacturing a CMOS semiconductor device able to reduce the effective thickness of the gate insulating film and able to secure stable performance is provided. The method in one embodiment comprises the steps of: forming a polycrystalline silicon film on a gate insulating film; introducing an n-type impurity into the polycrystalline silicon film in an nMOS formation region before gate processing of the polycrystalline silicon film; performing heat treatment so that the impurity diffuses in the polycrystalline silicon film and is activated; and patterning the polycrystalline silicon to form a gate pattern before introducing an impurity into the polycrystalline silicon film at a pMOS formation region.

Abstract: A method of manufacturing a CMOS semiconductor device able to reduce the effective thickness of the gate insulating film and able to secure stable performance is provided. The method in one embodiment comprises the steps of: forming a polycrystalline silicon film on a gate insulating film; introducing an n-type impurity into the polycrystalline silicon film in an nMOS formation region before gate processing of the polycrystalline silicon film; performing heat treatment so that the impurity diffuses in the polycrystalline silicon film and is activated; and patterning the polycrystalline silicon to form a gate pattern before introducing an impurity into the polycrystalline silicon film at a pMOS formation region.

Abstract: A gate insulator film and a gate electrode are formed on a semiconductor substrate, and then a layered stack of a SiO2 film and a SiN film is formed on the entire surface. Subsequently, sidewalls made of polysilicon film are formed adjacent to the gate electrode via the layered stack of the SiO2 film and the SiN film. Then, using as a mask the gate electrode, portions of the layered stack adjacent to the gate electrode, and the sidewalls, an ion dopant is implanted into a device active region to thereby form source/drains therein, and the sidewalls are then removed. At this stage, since the gate insulator film is completely covered with the layered stack, the gate insulator film is not ablated or retreated even on a device isolation insulator film.