Abstract: A cleaning blade which wipes a liquid discharge area by being moved relatively with respect to the liquid discharge area of a liquid discharge head having the liquid discharge area in which liquid discharge nozzles are arranged to discharge a liquid is disclosed. The cleaning blade includes: a supporting plate which has an adhesive agent layer on its front surface; and a wipe part which is slid and contacted with the liquid discharge area, the wipe part formed in which an elastic part formed of a synthetic resin is formed in one piece on the adhesive agent layer, and a tip end thereof is cut in a predetermined shape.

Abstract: A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps, an InGaP layer formed on the recessed portion, and a second GaAs layer formed on the InGaAs layer over the recessed portion.

Abstract: An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other.

Abstract: An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided.

Abstract: A braking force application control is performed when a change in a driver's posture takes place while a brake pedal is turned on when a vehicle is stopped. As a consequence, in a case in which the driver's posture changes such as when the driver turns to a rear seat side to get something without intending to release depression of the brake pedal, creep of the vehicle that the driver does not intend to happen can be inhibited. Furthermore, the vehicle stop retention is only performed when a travelling direction is a forward direction or a seatbelt is worn. As a result, performance of the vehicle stop retention can be inhibited when it is considered that the driver intentionally desires to let the vehicle creep.

Abstract: An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a ?/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side.

Abstract: An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided.

Abstract: In a semiconductor laser, in order to realize a desired oscillation wavelength efficiently by adjusting the oscillation wavelength of the laser with sufficient accuracy even when the oscillation wavelength of a manufactured laser deviates from a design value, for example, due to the manufacturing errors and the like in the manufacturing of the laser, there is provided a semiconductor laser comprising a semiconductor substrate, a semiconductor stacking body including a waveguide formed on the semiconductor substrate, and a diffraction grating, wherein the diffraction grating is formed along the waveguide so as to appear in the surface of the semiconductor stacking body.

Abstract: A semiconductor laser includes an active region including an active layer, and a diffraction grating and a phase shift which determine an oscillation wavelength, and a distributed reflector region including a light guide layer and a refection diffraction grating. The distributed reflector region has an effective diffraction grating period which varies along a direction of a cavity.

Abstract: A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps, an InGaP layer formed on the recessed portion, and a second GaAs layer formed on the InGaAs layer over the recessed portion.

Abstract: A liquid ejection head includes an energy-generating element arranged on a semiconductor substrate, a barrier layer deposited on the semiconductor substrate for forming a liquid chamber in the periphery of the energy-generating element, and a nozzle sheet bonded on the barrier layer and having a nozzle formed at a position opposing the energy-generating element, in which the liquid ejection head ejects liquid contained in the liquid chamber from the nozzle as liquid droplets by the energy-generating element, and the barrier layer is provided with a plurality of depressions, each having an independent contour, arranged within a range, which is separated from the border of the barrier layer, on an adhesive region adhering to the nozzle sheet.

Abstract: An optical waveguide structure formed over a substrate defines an optical waveguide for guiding light along a direction parallel to the substrate surfaces, and biasing a light intensity distribution of transverse modes of guided wave toward a first side of the optical waveguide path. A main diffraction grating is disposed at least on a second side opposite to the first side, and coupled with the guided wave propagating along the optical waveguide. A subsidiary diffraction grating is disposed on the first side, and diffracts the guided wave coupled with the main diffraction grating and propagating along the optical waveguide, to a direction different from an extending direction of the optical waveguide.

Abstract: A control device capable of moving a vehicle in a direction with an angle larger than at least the maximum steering angle of wheels. When the wheels (2) are brought into a parallel movement arrangement as shown in FIG. 3(a) and rotatingly driven according to the depressed amount of an accelerator pedal (53), the wheels (2) are slippingly moved on a road surface. Thus, while the vehicle forward component of a drive force generated by the right and left front wheels (2FR) and (2FL) and the vehicle rearward component of a drive force generated by the right and left rear wheels (2RR) and (2RL) balance each other out, the vehicle rightward component of a drive force generated by the right and left front wheels (2FR) and (2FL) and the vehicle rightward component of a drive force generated by the right and left rear wheels (2RR) and (2RL) act as a drive force for moving the vehicle (1) rightward. As a result, the vehicle (1) can be moved, in parallel, in the right side direction of the vehicle.

Abstract: A braking force application control is performed when a change in a driver's posture takes place while a brake pedal is turned on when a vehicle is stopped. As a consequence, in a case in which the driver's posture changes such as when the driver turns to a rear seat side to get something without intending to release depression of the brake pedal, creep of the vehicle that the driver does not intend to happen can be inhibited. Furthermore, the vehicle stop retention is only performed when a travelling direction is a forward direction or a seatbelt is worn. As a result, performance of the vehicle stop retention can be inhibited when it is considered that the driver intentionally desires to let the vehicle creep.

Abstract: A liquid ejection head includes an energy-generating element arranged on a semiconductor substrate, a barrier layer deposited on the semiconductor substrate for forming a liquid chamber in the periphery of the energy-generating element, and a nozzle sheet bonded on the barrier layer and having a nozzle formed at a position opposing the energy-generating element, in which the liquid ejection head ejects liquid contained in the liquid chamber from the nozzle as liquid droplets by the energy-generating element, and the barrier layer is provided with a plurality of depressions, each having an independent contour, arranged within a range, which is separated from the border of the barrier layer, on an adhesive region adhering to the nozzle sheet.

Abstract: A semiconductor light emitting device is provided with a GaAs substrate, a quantum dot active layer formed over the GaAs substrate, a GaAs layer formed above or below the quantum dot active layer, and a diffraction grating formed from InGaP or InGaAsP and periodically provided along an propagating direction of light in the GaAs layer.

Abstract: A liquid ejection head includes an energy-generating element arranged on a semiconductor substrate, a barrier layer deposited on the semiconductor substrate for forming a liquid chamber in the periphery of the energy-generating element, and a nozzle sheet bonded on the barrier layer and having a nozzle formed at a position opposing the energy-generating element, in which the liquid ejection head ejects liquid contained in the liquid chamber from the nozzle as liquid droplets by the energy-generating element, and the barrier layer is provided with a plurality of depressions, each having an independent contour, arranged within a range, which is separated from the border of the barrier layer, on an adhesive region adhering to the nozzle sheet.

Abstract: An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other.

Abstract: An optical waveguide propagates a laser beam. Main diffraction grating and sub-diffraction grating couple light propagating in the optical waveguide. The main diffraction grating and the sub-diffraction grating couple the light in such a manner that propagation in a second order transverse mode of the light propagating in the optical waveguide when both the main diffraction grating and the sub-diffraction grating are disposed, is suppressed more than propagation in the second order transverse mode of the light propagating in the optical waveguide when only the main diffraction grating is disposed.

Abstract: An optical semiconductor device with a semiconductor laser formed over a semiconductor substrate, and a modulator formed over the semiconductor substrate and continuously arranged with the semiconductor laser, wherein the semiconductor laser includes a first region having a diffraction grating with a phase shift, a second region arranged between the first region and the modulator, and in which the diffraction grating is not formed, and a common active layer formed over the first region and the second region, a first electrode injecting a current into the common active layer.