Abstract: A piezoelectric vibration device that can suppress deflection of a sealing member during molding using resin is provided. In a piezoelectric vibration device 1 including an oscillator 2 configured such that at least a vibrating portion 5 is sealed with a first sealing member 7 and a second sealing member 8 that are sealing members, an integrated circuit element 10 that is at least an electronic component element, a substrate 11 including a mounting surface 11a on which the oscillator 2 and the integrated circuit element 10 are mounted, and a molding portion 12 in which at least the oscillator 2 is covered with resin, the oscillator 2 includes a protecting member 9 that partially or entirely covers at least one of the first sealing member 7 and the second sealing member 8.

Abstract: A piezoelectric vibration device that can be firmly joined to an external substrate in a position as close as possible to the external substrate. A piezoelectric vibration device in which at least an oscillator and an integrated circuit element on a substrate on a first mounting surface and an external connection terminal electrically connected to an external substrate on a second mounting surface extending in parallel to the one of the principal surfaces. The substrate includes a recessed portion in the second mounting surface. The external connection terminal is arranged in the recessed portion and is configured such that a gap is provided between an outer edge of the external connection terminal and a side surface of the recessed portion.

Abstract: A piezoelectric vibrating device according to the present invention is provided with: a piezoelectric vibration plate having first and second driving electrodes respectively formed on main surfaces on both sides thereof, the piezoelectric vibration plate further having first and second mounting terminals that are respectively connected to the first and second driving electrodes. The piezoelectric vibrating device is also provided with first and second sealing members respectively joined to the main surfaces on both sides of the piezoelectric vibration plate in a manner that the first and second driving electrodes of the piezoelectric vibration plate are covered with these sealing members. At least one of the first and second sealing members includes a film made of a resin.

Abstract: Metal films for first and second mounting terminals are formed at ends on both sides of a piezoelectric vibration plate across a vibrating portion, and first and second mounting terminals connected to these metal films are formed on outer surfaces of resin films adhered to the piezoelectric vibration plate. In case the metal films for first and second mounting terminals on both sides of the vibrating portion are desirably reduced in size in order to enlarge the vibrating portion, an adequate joining area for mounting purpose is still secured for the first and second mounting terminals formed on the outer surfaces of the resin films.

Abstract: The piezoelectric vibration plate includes a piezoelectric substrate, a first driving electrode and a second driving electrode formed on main surfaces on both sides of the piezoelectric substrate, and a first mounting terminal and a second mounting terminal respectively connected to the first driving electrode and the second driving electrode. The first and second mounting terminals each have a metal film for mounting purpose formed on the piezoelectric substrate and a metal film for driving purpose formed on the metal film for mounting purpose. The metal films for mounting purpose each include a solder-resistant metal film. The metal films for driving purpose are formed in continuity with the first and second driving electrodes and constitute the first and second driving electrodes.

Abstract: An AT-cut crystal vibration plate has, at its both ends, first and second castellations that interconnect first mounting terminals and also interconnect second mounting terminals formed on main surfaces on both sides of this plate. The first and second castellations respectively have first and second cutouts, and these cutouts each have an end surface extending along Z? axis of crystal and located on a ?X-axis side. The end surfaces each include a first inclined face inclined in a manner that protrudes from one of the main surfaces toward the ?X-axis side, and a second inclined face inclined in a manner that protrudes from the other main surface toward the ?X-axis side. The angle made by the first inclined face and the second inclined face is an obtuse angle.

Abstract: A piezoelectric vibrating device according to the present invention is provided with: a piezoelectric vibration plate having first and second driving electrodes respectively formed on main surfaces on both sides thereof, the piezoelectric vibration plate further having first and second mounting terminals that are respectively connected to the first and second driving electrodes. The piezoelectric vibrating device is also provided with first and second sealing members respectively joined to the main surfaces on both sides of the piezoelectric vibration plate in a manner that the first and second driving electrodes of the piezoelectric vibration plate are covered with these sealing members. At least one of the first and second sealing members includes a film made of a resin.

Abstract: To provide an optical filter which can sufficiently reduce transmission of the red component. The optical filter 10 includes a first filter 20, a second filter 30 formed on a first surface 20A of the first filter 20, and a third filter 40 formed on a second surface 20B of the first filter 20. The optical filter 10 has cutoff characteristics in a first band A1 defined from a long-wavelength side in the visible region to the near-infrared region and in a third band A3 defined on the long-wavelength side relative to the first band, and has transmission characteristics in a second band A2 defined between the first band A1 and the third band A3. In the first band A1, a cutoff band in which a transmittance is 5% or lower is set to a bandwidth of at least 100 nm.

Abstract: An optical filter 13 is provided with a quartz plate 2 and a filter group 3. The filter group 3 is constituted by combining a first filter 33 having transmission characteristics in the visible region and one preset band of the infrared region that is contiguous with the visible region, and a second filter 35 and a third filter 36 each having transmission characteristics in the visible region and another preset band of the infrared region that is removed from the visible region and having blocking characteristics in a band between the visible region and the other band of the infrared region. In the second filter 35 and the third filter 36, each of the bands in which blocking characteristics are obtained is approximately 150 nm or less, and the bands in which blocking characteristics are obtained overlap.

Abstract: An IR cut filter includes an infrared light absorber to absorb infrared light, and an infrared light reflector to reflect infrared light. The infrared light absorber has a light transmission property of 50% transmittance with respect to a wavelength in a wavelength band of 620 to 670 nm. The infrared light reflector has a light transmission property of 50% transmittance with respect to a wavelength in a wavelength band of 670 to 690 nm. The wavelength with respect to which the infrared light reflector has the 50% transmittance is longer than the wavelength with respect to which the infrared light absorber has the 50% transmittance. A combination of the infrared light absorber and the infrared light reflector provides a light transmission property of 50% transmittance with respect to a wavelength in the 620 to 670 nm wavelength band and less than 5% transmittance with respect to a 700 nm wavelength.

Abstract: An IR cut filter includes an infrared light absorber to absorb infrared light, and an infrared light reflector to reflect infrared light. The infrared light absorber has a light transmission property of 50% transmittance with respect to a wavelength in a wavelength band of 620 to 670 nm. The infrared light reflector has a light transmission property of 50% transmittance with respect to a wavelength in a wavelength band of 670 to 690 nm. The wavelength with respect to which the infrared light reflector has the 50% transmittance is longer than the wavelength with respect to which the infrared light absorber has the 50% transmittance. A combination of the infrared light absorber and the infrared light reflector provides a light transmission property of 50% transmittance with respect to a wavelength in the 620 to 670 nm wavelength band and less than 5% transmittance with respect to a 700 nm wavelength.

Abstract: Input/output cells are formed so as to be peripherally arranged adjacent to a corner cell on a surface of a semiconductor chip, and electrode pads are formed on the respective input/output cells. The electrode pads are configured in a zigzag pad arrangement so as to form inner and outer pad arrays. However, of the electrode pads forming the inner pad array, those electrode pads in predetermined areas adjacent to the two sides of the corner cell are not disposed, such that an interconnect pattern of a carrier which is bump-bonded to the semiconductor chip and vias are prevented from becoming complex.

Abstract: An IR cut filter includes an infrared light absorber to absorb infrared light, and an infrared light reflector to reflect infrared light. The infrared light absorber has a light transmission property of 50% transmittance with respect to a wavelength in a wavelength band of 620 to 670 nm. The infrared light reflector has a light transmission property of 50% transmittance with respect to a wavelength in a wavelength band of 670 to 690 nm. The wavelength with respect to which the infrared light reflector has the 50% transmittance is longer than the wavelength with respect to which the infrared light absorber has the 50% transmittance. A combination of the infrared light absorber and the infrared light reflector provides a light transmission property of 50% transmittance with respect to a wavelength in the 620 to 670 nm wavelength band and less than 5% transmittance with respect to a 700 nm wavelength.

Abstract: Input/output cells are formed so as to be peripherally arranged adjacent to a corner cell on a surface of a semiconductor chip, and electrode pads are formed on the respective input/output cells. The electrode pads are configured in a zigzag pad arrangement so as to form inner and outer pad arrays. However, of the electrode pads forming the inner pad array, those electrode pads in predetermined areas adjacent to the two sides of the corner cell are not disposed, such that an interconnect pattern of a carrier which is bump-bonded to the semiconductor chip and vias are prevented from becoming complex.

Abstract: Input/output cells are formed so as to be peripherally arranged adjacent to a corner cell on a surface of a semiconductor chip, and electrode pads are formed on the respective input/output cells. The electrode pads are configured in a zigzag pad arrangement so as to form inner and outer pad arrays. However, of the electrode pads forming the inner pad array, those electrode pads in predetermined areas adjacent to the two sides of the corner cell are not disposed, such that an interconnect pattern of a carrier which is bump-bonded to the semiconductor chip and vias are prevented from becoming complex.

Abstract: An optical filter 13 is provided with a quartz plate 2 and a filter group 3. The filter group 3 is constituted by combining a first filter 33 having transmission characteristics in the visible region and one preset band of the infrared region that is contiguous with the visible region, and a second filter 35 and a third filter 36 each having transmission characteristics in the visible region and another preset band of the infrared region that is removed from the visible region and having blocking characteristics in a band between the visible region and the other band of the infrared region. In the second filter 35 and the third filter 36, each of the bands in which blocking characteristics are obtained is approximately 150 nm or less, and the bands in which blocking characteristics are obtained overlap.

Abstract: With a crystal vibrator, a package (housing) is produced by joining a base to a lid, and an internal space is formed within this package. A crystal resonator plate is held on the base in this internal space, and the internal space of the package is sealed airtight. In placing the crystal resonator plate on the base, the +X axial direction of the crystal resonator plate within the internal space is set.

Abstract: Input/output cells are formed so as to be peripherally arranged adjacent to a corner cell on a surface of a semiconductor chip, and electrode pads are formed on the respective input/output cells. The electrode pads are configured in a zigzag pad arrangement so as to form inner and outer pad arrays. However, of the electrode pads forming the inner pad array, those electrode pads in predetermined areas adjacent to the two sides of the corner cell are not disposed, such that an interconnect pattern of a carrier which is bump-bonded to the semiconductor chip and vias are prevented from becoming complex.

Abstract: Input/output cells are formed so as to be peripherally arranged adjacent to a corner cell on a surface of a semiconductor chip, and electrode pads are formed on the respective input/output cells. The electrode pads are configured in a zigzag pad arrangement so as to form inner and outer pad arrays. However, of the electrode pads forming the inner pad array, those electrode pads in predetermined areas adjacent to the two sides of the corner cell are not disposed, such that an interconnect pattern of a carrier which is bump-bonded to the semiconductor chip and vias are prevented from becoming complex.

Abstract: With a crystal vibrator, a package (housing) is produced by joining a base to a lid, and an internal space is formed within this package. A crystal resonator plate is held on the base in this internal space, and the internal space of the package is sealed airtight. In placing the crystal resonator plate on the base, the +X axial direction of the crystal resonator plate within the internal space is set.