Abstract: A lens system for an imaging device is provided, the lens system comprising: a first lens group, having a fixed position along an optical axis Z of the lens system, the first lens group comprising a pair of lenses, each of the pair of lenses having at least one lens surface that is a free-form surface,; and a second lens group, arranged along the optical axis Z of the lens system, comprising a plurality of rotationally symmetrical lenses; wherein a first lens of the pair of lenses of the first lens group is configured to be moveable along a Y-axis of the lens system perpendicular to the optical axis Z of the lens system, and a second lens of the pair of lenses of the first lens group is configured to be moveable in an opposite direction to the first lens of the pair of lenses along the Y-axis.

Abstract: When a tungsten film (43) is embedded inside of a conductive groove (4A) formed in a wafer (W2) and a silicon oxide film (36) thereon and having a high aspect ratio, film formation and etch back of the tungsten film (43) are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film (43) deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (43), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W2), are avoided.

Abstract: When a tungsten film (43) is embedded inside of a conductive groove (4A) formed in a wafer (W2) and a silicon oxide film (36) thereon and having a high aspect ratio, film formation and etch back of the tungsten film (43) are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film (43) deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (43), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W2), are avoided.