Patents by Inventor Manabu Saeda

Manabu Saeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride
    Patent number: 9416445
    Abstract: Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF3 in a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, to coat the inner surfaces of at least the processing chamber (1) and the gas supply passage (2) with a fluoride film.
    Type: Grant
    Filed: February 8, 2012
    Date of Patent: August 16, 2016
    Assignee: IWATANI CORPORATION
    Inventors: Yu Yoshino, Kunihiko Koike, Manabu Saeda, Toshiki Manabe
  • METHOD FOR TREATING INNER SURFACE OF CHLORINE TRIFLUORIDE SUPPLY PASSAGE IN APPARATUS USING CHLORINE TRIFLUORIDE
    Publication number: 20150041430
    Abstract: Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF3 in a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, to coat the inner surfaces of at least the processing chamber (1) and the gas supply passage (2) with a fluoride film.
    Type: Application
    Filed: February 8, 2012
    Publication date: February 12, 2015
    Applicant: IWATANI CORPORATION
    Inventors: Yu Yoshino, Kunihiko Koike, Manabu Saeda, Toshiki Manabe
  • Non-plasma cleaning method for semiconductor manufacturing apparatus
    Patent number: 5421902
    Abstract: When removing a laminar deposit existing in a thin film forming operational system of a semiconductor manufacturing apparatus, a mixture gas prepared by mixing nitrogen trifluoride gas with a fluoric gas is introduced into the thin film forming operational system so as to be brought into contact in a non-plasma state with the laminar deposit.
    Type: Grant
    Filed: May 2, 1994
    Date of Patent: June 6, 1995
    Assignee: Iwatani Sangyo Kabushiki Kaisha (Iwatani International Corp)
    Inventors: Hideki Odajima, Chitoshi Nogami, Masanori Suzuki, Manabu Saeda