Abstract: A method for operating non-volatile memory device is provided. The method includes applying a first voltage level to a word line connected to a memory cell, applying a second voltage level to the word line for a first time period, performing a read operation on the memory cell during the first time period, and discharging the word line for a second time period to a third voltage level greater than or equal to about 1V. The method also includes performing an erase word line recovery on a plurality of blocks of memory cells during the erase operation, and prior to an erase phase. The erase word line recovery substantially discharges all word lines of the plurality of blocks of memory cells.

Abstract: A scroll compressor is characterized in that by reducing an Oldham ring 57 and an orbiting scroll 12 in size, a compressing mechanism 4 is reduced in size, a pair of scroll-side keys 57b are disposed at locations deviated from each other from a diameter line of the ring portion 57a so that a distance between the pair of scroll-side keys 57b becomes not less than a width of the scroll-side keyway 12d, and a pair of main bearing-side keys 57c are disposed at locations deviated from each other from the diameter line of the ring portion 57a so that a distance between the pair of main bearing-side keys 57c becomes not less than a width of the main bearing-side keyways 51a.

Abstract: A bus bar attachment structure includes a coupling bus bar and an attachment member for the coupling bus bar. The coupling bus bar includes a plurality of bus bars which serves as a conductive path and a coupler which integrally couples the plurality of bus bars. The coupler includes a first notch that divides the coupler from the bus bar and a second notch that bends the coupler divided from the bus bar such that the coupler is separated from the bus bar.

Abstract: In a programming operation of a 3D stacked non-volatile memory device, an initial set of memory cells on a selected word line layer, involving fewer than all memory cells on a selected word line layer, are programmed first as a test case to determine optimal conditions for programming the remaining memory cells on the selected word line layer. For example, a number of program-verify iterations or loops which are needed to program the initial set of memory cells an initial amount is determined. This loop count is then stored, e.g., within the initial set of memory cells, within the remaining memory cells, within memory cells on a remaining word line layer, or in a data register, and programming of the initial set of memory cells continues to completion. Subsequently, the loop count is retrieved and used to determine an optimal starting program voltage for programming the remaining memory cells.

Abstract: In a programming operation of a 3D stacked non-volatile memory device, an initial set of memory cells on a selected word line layer, involving fewer than all memory cells on a selected word line layer, are programmed first as a test case to determine optimal conditions for programming the remaining memory cells on the selected word line layer. For example, a number of program-verify iterations or loops which are needed to program the initial set of memory cells an initial amount is determined. This loop count is then stored, e.g., within the initial set of memory cells, within the remaining memory cells, within memory cells on a remaining word line layer, or in a data register, and programming of the initial set of memory cells continues to completion. Subsequently, the loop count is retrieved and used to determine an optimal starting program voltage for programming the remaining memory cells.

Abstract: Methods and non-volatile storage systems are provided for recovering data during a programming of non-volatile storage. Program data that was originally stored in one set of latches may be preserved with a combination of two sets of latches. These two sets of latches may also be used to store verify status during programming of that program data. The original program data may be recovered by performing a logical operation on the data in the two sets of latches. For example, upper page data could be initially stored in one set of latches. While the upper page data is being programmed, that set of latches and another set of latches are used to store verify status with respect to the upper page data. If a program error occurs while the upper page data is being preserved, it may be recovered by performing a logical operation on the two sets of latches.

Abstract: An illumination display switching device includes a switch knob slidable with respect to a push button-type switch. The switch knob includes a display operation part including a display design and a non-display design, a lock arm that is vertically hung from a central portion of the display operation part and connected to the push button-type switch, a light guide member that is vertically hung from the display operation part positioned near the light source, and an interconnection light guide member that interconnects the light guide member, a base of the lock arm and the display design. The display design is illuminated from a backside by emission light of the light source through the light guide member and the interconnection light guide member. The lock arm, the light guide member and the interconnection light guide member are integrally molded with the display design by the light-transmitting resin.

Abstract: A reporting system has a first handheld device that locks and unlocks a door of a vehicle, and a second handheld device that communicates with the first handheld device. The first handheld device has an inside/outside determination unit that carries out wireless communication with the vehicle and acquires, with the vehicle, information of inside/outside determination on whether the first handheld device is inside the vehicle or outside the vehicle, and a transmitting unit that transmits the result of the inside/outside determination. The second handheld device has a receiving unit that receives the result of the determination from the first handheld device.

Abstract: A wire holder includes a body, a cover covering the body, and a hinge connecting the body and the cover. The cover holds a plurality of wires between the cover and the body. A lock mechanism which locks the body and the cover is provided at an opposite end portion of the wire holder to the hinge. A shaft is provided at a side surface of the opposite end portion of the wire holder to the hinge. The hinge includes a connection part which protrudes from the wire holder in a state where the body and the cover are locked by the lock mechanism.

Abstract: A power window switch has a case, a substrate disposed in the case, a window operation knob disposed on the case, a window lock button disposed on a front side of the window operation knob on the case, a window operation switch mechanism disposed in the case and activated in accordance with an operation of the window operation knob, a window lock switch mechanism disposed in the case and activated in accordance with an operation of the window lock button, and a connector having a terminal with a first terminal end protruding from the case and a second terminal end connected to the substrate. The window lock switch mechanism includes two conductive plate springs, and a pressing unit for pressing the plate springs.

Abstract: Methods and non-volatile storage systems are provided for determining erratically programmed storage elements, including under-programmed and over-programmed storage elements. Techniques do not require any additional data latches. A set of data latches may be used to store program data for a given memory element. This program data may be maintained after the programming is over for use in erratic program detection. In one embodiment, lockout status is kept in a data latch that is used to serially receive program data to be programmed into the storage element. Therefore, no extra data latches are required to program the storage elements and to maintain the program data afterwards.

Abstract: In a programming operation of a 3D stacked non-volatile memory device, an initial set of memory cells on a selected word line layer, involving fewer than all memory cells on a selected word line layer, are programmed first as a test case to determine optimal conditions for programming the remaining memory cells on the selected word line layer. For example, a number of program-verify iterations or loops which are needed to program the initial set of memory cells an initial amount is determined. This loop count is then stored, e.g., within the initial set of memory cells, within the remaining memory cells, within memory cells on a remaining word line layer, or in a data register, and programming of the initial set of memory cells continues to completion. Subsequently, the loop count is retrieved and used to determine an optimal starting program voltage for programming the remaining memory cells.

Abstract: In a programming operation of a 3D stacked non-volatile memory device, an initial set of memory cells on a selected word line layer, involving fewer than all memory cells on a selected word line layer, are programmed first as a test case to determine optimal conditions for programming the remaining memory cells on the selected word line layer. For example, a number of program-verify iterations or loops which are needed to program the initial set of memory cells an initial amount is determined. This loop count is then stored, e.g., within the initial set of memory cells, within the remaining memory cells, within memory cells on a remaining word line layer, or in a data register, and programming of the initial set of memory cells continues to completion. Subsequently, the loop count is retrieved and used to determine an optimal starting program voltage for programming the remaining memory cells.

Abstract: A busbar cutting unit for cutting a blidge portion of a busbar plate having a plurality of busbars coupled to each other with the bridge portion so that the busbars serve as electric circuits respectively, includes an attachment portion to which the busbar plate is attached, a reception portion that receives bridge pieces formed by cutting the bridge portion of the busbar plate when the bridge portion of the busbar plate is pressed down toward the attachment portion, and a welding portion that is made of an electrical insulation material and is welded to the bridge pieces received in the reception portion.

Abstract: Methods and non-volatile storage systems are provided for recovering data during a programming of non-volatile storage. Program data that was originally stored in one set of latches may be preserved with a combination of two sets of latches. These two sets of latches may also be used to store verify status during programming of that program data. The original program data may be recovered by performing a logical operation on the data in the two sets of latches. For example, upper page data could be initially stored in one set of latches. While the upper page data is being programmed, that set of latches and another set of latches are used to store verify status with respect to the upper page data. If a program error occurs while the upper page data is being preserved, it may be recovered by performing a logical operation on the two sets of latches.

Abstract: A contact structure includes a busbar which is provided with a plurality of fixed contacts and a contact which includes a body part, conductive parts and a fixing part. The conductive parts are extended from the body part. The fixing part is extended from the body part so as to urge the conductive parts toward the fixed contacts. Each of the fixed contacts respectively includes a concave portion configured to come into contact with the conductive parts, and convex portions formed at both sides of the concave portion. The fixing part slides between a concave portion and convex portions which are formed in the supportive engaging part. The conductive parts come into contact with the concave portions of the fixed contacts in a state where the fixing part is positioned in the concave portion of the supportive engaging part.

Abstract: Methods and non-volatile storage systems are provided for detecting defects in word lines. A “broken” word line defect may be detected. Information may be maintained as to which storage elements were intended to be programmed to a tracked state. Then, after programming is complete, the storage elements are read to determine which storage elements have a threshold voltage below a reference voltage level associated with the tracked state. By tracking which storage elements are in the tracked state, elements associated with other states may be filtered out such that an accurate assessment may be made as to which storage elements were under-programmed. From this information, a determination may be made whether the word line is defective. For example, if too many storage elements are under-programmed, this may indicate a broken word line.

Abstract: According to an embodiment, a switch of an audio output device selects any of an output of the buffer and an output of the zero data generation unit to output to the output port. The switch control unit controls the selection of the switch based on an instruction of an output control signal. The front address storage unit stores a setting value of a front address of the buffer. The offset value storage unit stores an offset value set in the buffer. The output address control unit outputs a value obtained by adding the offset value to the setting value of the front address as an output start address of the buffer.

Abstract: Methods and non-volatile storage systems are provided for determining erratically programmed storage elements, including under-programmed and over-programmed storage elements. Techniques do not require any additional data latches. A set of data latches may be used to store program data for a given memory element. This program data may be maintained after the programming is over for use in erratic program detection. In one embodiment, lockout status is kept in a data latch that is used to serially receive program data to be programmed into the storage element. Therefore, no extra data latches are required to program the storage elements and to maintain the program data afterwards.

Abstract: Methods and non-volatile storage systems are provided for detecting defects in word lines. A “broken” word line defect may be detected. Information may be maintained as to which storage elements were intended to be programmed to a tracked state. Then, after programming is complete, the storage elements are read to determine which storage elements have a threshold voltage below a reference voltage level associated with the tracked state. By tracking which storage elements are in the tracked state, elements associated with other states may be filtered out such that an accurate assessment may be made as to which storage elements were under-programmed. From this information, a determination may be made whether the word line is defective. For example, if too many storage elements are under-programmed, this may indicate a broken word line.