Patents by Inventor Manabu Sekiguchi
Manabu Sekiguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220411600Abstract: Provided is a polyolefin microporous membrane containing polyethylene, wherein the melting peak of nonrev. heat flow measured by a temperature-modulated DSC method at a temperature rise rate of 1° C./min of the polyolefin microporous membrane is within the range of 141.0° C. to 150.0° C.Type: ApplicationFiled: June 19, 2020Publication date: December 29, 2022Applicant: Asahi Kasei Kabushiki KaishaInventors: Masaki Katayama, Manabu Sekiguchi, Ryoma Kawaguchi, Masaaki Kanao
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Publication number: 20220389203Abstract: Provided is a polyolefin microporous membrane in which the membrane thickness is 1.0-17.0 ?m inclusive, the flexural modulus, which is the value of the flexural rigidity (gf×cm2/cm) in the longitudinal direction (MD) divided by the cube of the membrane thickness (?m), is 0.3 (?gf×cm2/cm)/?m3 to 1.5 (?gf×cm2/cm)/?m3 inclusive, and the basis weight-converted puncture strength is 70 gf/(g/m2) to 160 gf/(g/m2) inclusive.Type: ApplicationFiled: October 8, 2020Publication date: December 8, 2022Applicant: Asahi Kasei Kabushiki KaishaInventors: Mana Kawachi, Hiroshi Miyazawa, Manabu Sekiguchi, Shinya Hisamitsu, Yoshiki Oda
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Patent number: 11504674Abstract: A polyolefin microporous film having a laminated structure provided with at least one layer A containing a polyolefin and at least one layer B containing a polyolefin. 0 mass % to less than 3 mass % of polypropylene is contained in layer A and 1 mass % to less than 30 mass % of polypropylene is contained in layer B. When the proportion of polypropylene contained in layer A is represented by PPA (mass %) and the proportion of polypropylene contained in layer B is represented by PPB (mass %), PPB>PPA. In the polyolefin microporous film, the heat shrinkage ratio in TD at 120° C. measured upon applying, in MD, a constant load determined on the basis of the relationship: load (gf)=0.01×piercing strength (gf) of polyolefin microporous film×length (mm) in TD of polyolefin microporous film, is 10 to 40% inclusive.Type: GrantFiled: October 12, 2018Date of Patent: November 22, 2022Assignee: Asahi Kasei Kabushiki KaishaInventors: Manabu Sekiguchi, Akihisa Yamashita
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Patent number: 11362399Abstract: According to the present invention, a microporous membrane contains a polyolefin resin and inorganic particles; the primary particle diameter of the inorganic particles is 100 nm or less; the content of the inorganic particles is 10-60% by mass or 10% by mass or more but less than 40% by mass based on the mass of the microporous membrane; and the retention time at 150° C. is less than 200 seconds or the retention time at 145° C. is more than 1 second but less than 300 seconds in the thermal behavior evaluation of the microporous membrane.Type: GrantFiled: May 25, 2018Date of Patent: June 14, 2022Assignee: Asahi Kasei Kabushiki KaishaInventors: Yuki Fukunaga, Manabu Sekiguchi
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Publication number: 20210214535Abstract: Provided is a polyolefin microporous membrane having a loss tangent (tan ?) at 230° C. of 0.35 or more and less than 0.60 in melt viscoelasticity measurement.Type: ApplicationFiled: August 9, 2019Publication date: July 15, 2021Applicant: Asahi Kasei Kabushiki KaishaInventors: Akihisa YAMASHITA, Manabu SEKIGUCHI
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Publication number: 20210106952Abstract: A polyolefin microporous film having a laminated structure provided with at least one layer A containing a polyolefin and at least one layer B containing a polyolefin. 0 mass % to less than 3 mass % of polypropylene is contained in layer A and 1 mass % to less than 30 mass % of polypropylene is contained in layer B. When the proportion of polypropylene contained in layer A is represented by PPA (mass %) and the proportion of polypropylene contained in layer B is represented by PPB (mass %), PPB>PPA. In the polyolefin microporous film, the heat shrinkage ratio in TD at 120° C. measured upon applying, in MD, a constant load determined on the basis of the relationship: load (gf)=0.01×piercing strength (gf) of polyolefin microporous film×length (mm) in TD of polyolefin microporous film, is 10 to 40% inclusive.Type: ApplicationFiled: October 12, 2018Publication date: April 15, 2021Applicant: Asahi Kasei Kabushiki KaishaInventors: Manabu Sekiguchi, Akihisa Yamashita
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Patent number: 10720622Abstract: A microporous membrane according to the present invention is a microporous membrane containing a copolymerized high density polyethylene and a high density polyethylene, wherein a content of an ?-olefin unit having 3 or more carbon atoms in the microporous membrane is 0.01 mol % or more and 0.6 mol % or less, and a viscosity average molecular weight of the microporous membrane is less than 300,000. In addition, a battery separator according to the present invention contains the above microporous membrane. Further, a battery according to the present invention contains the above battery separator.Type: GrantFiled: July 13, 2016Date of Patent: July 21, 2020Assignee: Asahi Kasei Kabushiki KaishaInventors: Manabu Sekiguchi, Yuki Fukunaga, Keita Dohki
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Publication number: 20200176742Abstract: According to the present invention, a microporous membrane contains a polyolefin resin and inorganic particles; the primary particle diameter of the inorganic particles is 100 nm or less; the content of the inorganic particles is 10-60% by mass or 10% by mass or more but less than 40% by mass based on the mass of the microporous membrane; and the retention time at 150° C. is less than 200 seconds or the retention time at 145° C. is more than 1 second but less than 300 seconds in the thermal behavior evaluation of the microporous membrane.Type: ApplicationFiled: May 25, 2018Publication date: June 4, 2020Applicant: Asahi Kasei Kabushiki KaishaInventors: Yuki Fukunaga, Manabu Sekiguchi
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Publication number: 20180205057Abstract: A microporous membrane according to the present invention is a microporous membrane containing a copolymerized high density polyethylene and a high density polyethylene, wherein a content of an ?-olefin unit having 3 or more carbon atoms in the microporous membrane is 0.01 mol % or more and 0.6 mol % or less, and a viscosity average molecular weight of the microporous membrane is less than 300,000. In addition, a battery separator according to the present invention contains the above microporous membrane. Further, a battery according to the present invention contains the above battery separator.Type: ApplicationFiled: July 13, 2016Publication date: July 19, 2018Applicant: Asahi Kasei Kabushiki KaishaInventors: Manabu Sekiguchi, Yuki Fukunaga, Keita Dohki
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Patent number: 8318582Abstract: A method of forming a trench isolation, comprising the steps of: applying a silicone resin composition comprising a silicone resin which is represented by the following rational formula (1) and is solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k??(1) (wherein n, m and k are each a number, with the proviso that when n+m+k=1, n is 0 to 0.8, m is 0 to 1.0, and k is 0 to 0.2) and an organic solvent to a substrate having trenches in such a manner that the trenches of the substrate are filled with the silicone resin composition so as to form a coating film; and carrying out the step of bringing the coating film into contact with at least one selected from the group consisting of water, an alcohol and hydrogen peroxide and the step of subjecting the coating film to at least one treatment selected from the group consisting of a heat treatment and an optical treatment.Type: GrantFiled: January 30, 2009Date of Patent: November 27, 2012Assignee: JSR CorporationInventors: Seitarou Hattori, Manabu Sekiguchi, Terukazu Kokubo, Kentaro Tamaki, Tsuyoshi Furukawa, Taichi Matsumoto, Chiaki Miyamoto
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Publication number: 20110053340Abstract: A method of forming a trench isolation, comprising the steps of: applying a silicone resin composition comprising a silicone resin which is represented by the following rational formula (1) and is solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k??(1) (wherein n, m and k are each a number, with the proviso that when n+m+k=1, n is 0 to 0.8, m is 0 to 1.0, and k is 0 to 0.2) and an organic solvent to a substrate having trenches in such a manner that the trenches of the substrate are filled with the silicone resin composition so as to form a coating film; and carrying out the step of bringing the coating film into contact with at least one selected from the group consisting of water, an alcohol and hydrogen peroxide and the step of subjecting the coating film to at least one treatment selected from the group consisting of a heat treatment and an optical treatment.Type: ApplicationFiled: January 30, 2009Publication date: March 3, 2011Applicant: JSR CORPORATIONInventors: Seitarou Hattori, Manabu Sekiguchi, Terukazu Kokubo, Kentaro Tamaki, Tsuyoshi Furukawa, Taichi Matsumoto, Chiaki Miyamoto
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Patent number: 7556860Abstract: A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.Type: GrantFiled: April 26, 2006Date of Patent: July 7, 2009Assignee: JSR CorporationInventors: Masahiro Akiyama, Seitaro Hattori, Takahiko Kurosawa, Manabu Sekiguchi, Terukazu Kokubo, Michihiro Mita, Tatsuya Yamanaka, Masaki Obi
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Publication number: 20060216531Abstract: A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.Type: ApplicationFiled: April 26, 2006Publication date: September 28, 2006Applicant: JSR CORPORATIONInventors: Masahiro Akiyama, Seitaro Hattori, Takahiko Kurosawa, Manabu Sekiguchi, Terukazu Kokubo, Michihiro Mita, Tatsuya Yamanaka, Masaki Obi
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Publication number: 20050112386Abstract: A composition for film formation having low dielectric constant, excellent adhesion to a silica film and excellent adhesion to an organic film, a method for preparing the composition, and a method for forming a silica film using the composition are disclosed. The composition for film formation comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one specific silane compound, and (B) an oxygen-containing organic solvent, wherein the content of the product of hydrolysis and condensation (A) is less than 5% by weight based on the weight of the composition. The composition can form a silica film having improved dielectric constant characteristics and storage stability, and also improved adhesion to other silica films and organic films.Type: ApplicationFiled: November 19, 2004Publication date: May 26, 2005Applicant: JSR CORPORATIONInventors: Masahiro Akiyama, Manabu Sekiguchi, Seitaro Hattori, Terukazu Kokubo
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Patent number: 6890605Abstract: An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided.Type: GrantFiled: September 24, 2002Date of Patent: May 10, 2005Assignee: JSR CorporationInventors: Michinori Nishikawa, Manabu Sekiguchi, Matthias Patz, Mutsuhiko Yoshioka, Atsushi Shiota, Kinji Yamada
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Patent number: 6824833Abstract: A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.Type: GrantFiled: September 27, 2002Date of Patent: November 30, 2004Assignee: JSR CorporationInventors: Michinori Nishikawa, Manabu Sekiguchi, Matthias Patz, Atsushi Shiota, Kinji Yamada
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Publication number: 20040231777Abstract: A method of processing an organosiloxane film includes loading, into a reaction container (1), a substrate (W) with a coating film of a polysiloxane base solution applied thereon. The solution contains bond of a silicon atom with a functional group selected from the group consisting of a methyl group, phenyl group, and vinyl group. The method also includes subjecting the substrate (W) to a heat process in the reaction container (1) to bake the coating film. The heat process is performed in a process atmosphere that includes a catalytic agent gas containing a mixture of ammonia and water, at a process temperature of from 300 to 400° C.Type: ApplicationFiled: March 3, 2004Publication date: November 25, 2004Inventors: Shingo Hishiya, Tetsuya Sano, Manabu Sekiguchi, Michihiro Mita
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Patent number: 6749944Abstract: A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.Type: GrantFiled: September 24, 2002Date of Patent: June 15, 2004Assignee: JSR CorporationInventors: Michinori Nishikawa, Manabu Sekiguchi, Atsushi Shiota, Kinji Yamada
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Publication number: 20030077461Abstract: A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.Type: ApplicationFiled: September 27, 2002Publication date: April 24, 2003Applicant: JSR CORPORATIONInventors: Michinori Nishikawa, Manabu Sekiguchi, Matthias Patz, Atsushi Shiota, Kinji Yamada
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Publication number: 20030059550Abstract: An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided.Type: ApplicationFiled: September 24, 2002Publication date: March 27, 2003Applicant: JSR CORPORATIONInventors: Michinori Nishikawa, Manabu Sekiguchi, Matthias Patz, Mutsuhiko Yoshioka, Atsushi Shiota, Kinji Yamada