Abstract: A semiconductor device is provided wherein stacked semiconductor substrates are electrically coupled together in a satisfactory state by a conductor buried in the interior of a through hole. A first semiconductor substrate includes a substrate having main surfaces, further includes a semiconductor element formed within and over the substrate, a wiring coupled to the semiconductor element electrically, and a conductive layer formed in the interior of a through hole, the through hole extending through mutually confronting first and second main surfaces as the main surfaces of the substrate and reaching the wiring. The first semiconductor substrate and a second semiconductor substrate are stacked and the conductive layer is coupled to a wiring of the second semiconductor substrate electrically. In a second main surface of the conductive layer, a recess is formed around an end portion of the through hole so that a bottom wall surface of the recess is present in the interior of the substrate.