Patents by Inventor Manabu Tomisaka
Manabu Tomisaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220384185Abstract: Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.Type: ApplicationFiled: May 23, 2022Publication date: December 1, 2022Inventors: Kazufumi AOKI, Naoki MARUNO, Bahman SOLTANI, Yuya KATO, Kyohei KOTAKE, Shinji MUKOTA, Manabu TOMISAKA, Yasuo ISHIHARA, Shusaku NAKAZAWA, Tetsuji YAMAGUCHI
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Publication number: 20170327943Abstract: A coating structure includes a base made of metal, a foundation layer provided on the base, and an insulation film provided on the foundation layer. The insulation film includes a plurality of layers, each layer of the plurality of layers being different in material, the plurality of layers being layered alternately with each other. The foundation layer is provided by a method other than a coating method using a surface chemical reaction occurring on the base, and a part of the foundation layer in contact with the base is amorphous. According to this, when a foreign material adheres on the base, the foreign material can be covered by the foundation layer. Since the insulation film is provided on the foundation layer, forming defects of the insulation film caused by the foreign material can be limited.Type: ApplicationFiled: November 24, 2015Publication date: November 16, 2017Inventors: Kazuaki KAFUKU, Yukihiro SANO, Takayuki HAYASHI, Manabu TOMISAKA, Ryonosuke TERA
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Publication number: 20150048510Abstract: A semiconductor device includes a semiconductor substrate and a metal film formed on the semiconductor substrate. The metal film includes a Ni base and a material having condensation energy higher than that of Ni. In a method of manufacturing a semiconductor device, a semiconductor substrate and a target, which is formed by melting P in Ni, are prepared, and sputtering is performed with the target while a portion of the semiconductor substrate where the metal film is to be formed is heated to a temperature of from 280° C. inclusive to 870° C. inclusive.Type: ApplicationFiled: April 22, 2013Publication date: February 19, 2015Inventors: Manabu Tomisaka, Yoshifumi Okabe, Mikimasa Suzuki
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Patent number: 8405218Abstract: In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.Type: GrantFiled: September 22, 2010Date of Patent: March 26, 2013Assignee: DENSO CORPORATIONInventors: Manabu Tomisaka, Michio Kameyama, Terukazu Fukaya, Kazuhito Katoh, Akira Tai, Kazuo Akamatsu, Yoshiko Fukuda, Yuji Fukuda, Mika Ootsuki
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Patent number: 8263490Abstract: A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.Type: GrantFiled: September 28, 2010Date of Patent: September 11, 2012Assignee: DENSO CORPORATIONInventors: Manabu Tomisaka, Hidetoshi Katou, Yutaka Fukuda, Akira Tai, Kazuo Akamatsu, Yoshiko Fukuda, Yuji Fukuda, Mika Ootsuki
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Publication number: 20110207241Abstract: A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.Type: ApplicationFiled: September 28, 2010Publication date: August 25, 2011Applicant: DENSO CORPORATIONInventors: Manabu Tomisaka, Hidetoshi Katou, Yutaka Fukuda, Yoshiko Fukuda, Akira Tai, Kazuo Akamatsu
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Publication number: 20110207264Abstract: A method of manufacturing a semiconductor device includes cutting a part of a resin insulating layer formed on a surface of a semiconductor substrate with a cutting tool. The cutting the part of the resin insulating layer includes cutting a portion of the resin insulating layer that has a surface on which a metal layer is disposed. The cutting the portion of the resin insulating layer is performed in such a manner that, in a stress distribution inside the resin insulating layer along an edge portion of the cutting tool and a peripheral portion of the edge portion, a width at 90% of a maximum value is not more than 1.3 ?m.Type: ApplicationFiled: October 15, 2010Publication date: August 25, 2011Applicant: DENSO CORPORATIONInventors: Manabu TOMISAKA, Akira Tai, Kazuo Akamatsu, Yutaka Fukuda, Yoshiko Fukuda, Yuji Fukuda, Mika Ootsuki, Mayu Fukuda
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Publication number: 20110198733Abstract: In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.Type: ApplicationFiled: September 22, 2010Publication date: August 18, 2011Applicant: DENSO CORPORATIONInventors: Manabu Tomisaka, Michio Kameyama, Terukazu Fukaya, Kazuhito Katoh, Yutaka Fukuda, Akira Tai, Kazuo Akamatsu, Yoshiko Fukuda, Yuji Fukuda, Mika Ootsuki, Mayu Fukuda
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Patent number: 7910460Abstract: A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.Type: GrantFiled: August 5, 2010Date of Patent: March 22, 2011Assignee: DENSO CORPORATIONInventors: Manabu Tomisaka, Hisatoshi Kojima, Akihiro Niimi
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Semiconductor device having semiconductor chip and metal plate and method for manufacturing the same
Publication number: 20110042741Abstract: A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.Type: ApplicationFiled: August 17, 2010Publication date: February 24, 2011Applicant: DENSO CORPORATIONInventors: Daisuke Fukuoka, Takanori Teshima, Kuniaki Mamitsu, Ken Sakamoto, Manabu Tomisaka, Tetsuo Fujii, Akira Tai, Kazuo Akamatsu, Masayoshi Nishihata -
Publication number: 20100311191Abstract: A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.Type: ApplicationFiled: August 5, 2010Publication date: December 9, 2010Applicant: DENSO CORPORATIONInventors: Manabu Tomisaka, Hisatoshi Kojima, Akihiro Niimi
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Publication number: 20100288636Abstract: A laminated gas sensor for exhaust gases improving thermal shock resistance, durability and reliability without permitting characteristics of the exhaust gas sensor to be particularly lowered is provided. A laminated gas sensor comprising a solid electrolyte layer (4) formed on one surface of a substrate (1) holding a lower electrode layer (3) therebetween, and an upper electrode layer (5) on the solid electrolyte layer (4), wherein the substrate (1) is a dense substrate made of at least one substrate material selected from silicon nitride, silicon carbide and aluminum nitride, and, as required, a thermal expansion buffer layer (8) is provided between the substrate (1) inclusive of at least part of the lower electrode layer (3) and the solid electrolyte layer (4), and the difference is not more than 5 ppm/° C.Type: ApplicationFiled: May 12, 2010Publication date: November 18, 2010Applicant: DENSO CORPORATIONInventors: Masahiro Sone, Manabu Tomisaka, Masashi Totokawa
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Patent number: 7800232Abstract: A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.Type: GrantFiled: February 29, 2008Date of Patent: September 21, 2010Assignee: DENSO CORPORATIONInventors: Manabu Tomisaka, Hisatoshi Kojima, Akihiro Niimi
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Publication number: 20080217771Abstract: A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.Type: ApplicationFiled: February 29, 2008Publication date: September 11, 2008Applicant: DENSO CORPORATIONInventors: Manabu Tomisaka, Hisatoshi Kojima, Akihiro Niimi
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Patent number: 7268008Abstract: A method for manufacturing a pressure sensor includes the steps of: preparing a semiconductor substrate; forming an insulation film on the substrate; forming a first metal film on the insulation film; forming a first protection film on the first metal film and the insulation film; forming a second protection film on the first metal film and the first protection film; performing reduction treatment of adhesive force on the second protection film, the force between the second protection film and a second metal film; forming the second metal film on the first metal film and the first protection film; and removing a part of the second metal film.Type: GrantFiled: January 5, 2006Date of Patent: September 11, 2007Assignee: DENSO CorporationInventors: Manabu Tomisaka, Yoshifumi Watanabe, Hiroaki Tanaka
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Publication number: 20060160263Abstract: A method for manufacturing a pressure sensor includes the steps of: preparing a semiconductor substrate; forming an insulation film on the substrate; forming a first metal film on the insulation film; forming a first protection film on the first metal film and the insulation film; forming a second protection film on the first metal film and the first protection film; performing reduction treatment of adhesive force on the second protection film, the force between the second protection film and a second metal film; forming the second metal film on the first metal film and the first protection film; and removing a part of the second metal film.Type: ApplicationFiled: January 5, 2006Publication date: July 20, 2006Applicant: DENSO CORPORATIONInventors: Manabu Tomisaka, Yoshifumi Watanabe, Hiroaki Tanaka
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Patent number: 7036384Abstract: A pressure sensor includes a semiconductor substrate having a diaphragm in which an electrical circuit including a gauge resistance is formed, an insulation film provided on a surface of the semiconductor substrate, an Al film provided on the insulation film and electrically connected to the electrical circuit through a conductor hole of the insulation film, an Au film provided on the Al film through a Ti film, a first protective film which covers the Al film and has an opening portion from which a portion of the Au film is exposed. In the pressure sensor, a second protective film made of polyimideamide or polyimide covers at least the surface of the Au film exposed from the first protective film, and a vicinity of the opening portion of the first protective film. Therefore, corrosion resistance of the Al film can be prevented while the pressure sensor has a reduced component number.Type: GrantFiled: July 14, 2005Date of Patent: May 2, 2006Assignee: Denso CorporationInventors: Hiroaki Tanaka, Manabu Tomisaka
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Publication number: 20060016267Abstract: A pressure sensor includes a semiconductor substrate having a diaphragm in which an electrical circuit including a gauge resistance is formed, an insulation film provided on a surface of the semiconductor substrate, an Al film provided on the insulation film and electrically connected to the electrical circuit through a conductor hole of the insulation film, an Au film provided on the Al film through a Ti film, a first protective film which covers the Al film and has an opening portion from which a portion of the Au film is exposed. In the pressure sensor, a second protective film made of polyimideamide or polyimide covers at least the surface of the Au film exposed from the first protective film, and a vicinity of the opening portion of the first protective film. Therefore, corrosion resistance of the Al film can be prevented while the pressure sensor has a reduced component number.Type: ApplicationFiled: July 14, 2005Publication date: January 26, 2006Inventors: Hiroaki Tanaka, Manabu Tomisaka
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Publication number: 20030221969Abstract: A copper sulfate plating bath is used which containsType: ApplicationFiled: May 16, 2003Publication date: December 4, 2003Inventors: Manabu Tomisaka, Eiichi Ando, Kiyoshi Shimada, Hirotaka Nobata, Tetsuji Oishi, Yusuke Abe, Haruki Sonoda, Yoshihito Tatehaba, Yasuo Ohta, Kazuyuki Suda