Abstract: A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

Abstract: A metallic lustrous member with electromagnetic wave transmissibility, which is capable of being easily produced even when using not only chromium (Cr) or indium (In) but also any of some other metals such as aluminum (Al), as a material for a metal layer thereof. A metallic lustrous member with electromagnetic wave transmissibility, which is capable of using silver (Ag), zinc (Zn), lead (Pb) or copper (Cu), or an alloy thereof, as a material for a metal layer thereof, in addition to aluminum (Al). The metallic lustrous member with electromagnetic wave transmissibility, comprises an indium oxide-containing layer provided along a surface of a substrate, and a metal layer laminated on the indium oxide-containing layer, wherein the metal layer includes, in at least part thereof, a plurality of portions which are in a discontinuous state.

Abstract: The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).

Abstract: A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.

Abstract: For a piezoelectric device, an optical characteristic and/or a piezoelectric characteristic is improved. A piezoelectric device has a first electrode layer, a second electrode layer, and a piezoelectric layer provided between the first electrode layer and the second electrode layer, wherein the piezoelectric layer is formed of a wurtzite crystal material as a main component, to which one or more elements is/are added, said one or more elements being transparent when turned into an oxide, and wherein a haze value is 3% or less, and transmittance with respect to light having a wavelength of 380 nm is 50% or more.

Abstract: A piezoelectric device that exhibits good piezoelectric characteristics, while reducing generation of leakage current paths, and a method of manufacturing the same, are provided. The piezoelectric device has a multilayer stack in which a first electrode, a piezoelectric layer, and a second electrode are stacked in this order on a substrate, wherein at least the first electrode is formed of an amorphous oxide conductor.

Abstract: A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

Abstract: A metallic lustrous member with electromagnetic wave transmissibility, which is capable of being easily produced even when using not only chromium (Cr) or indium (In) but also any of some other metals such as aluminum (Al), as a material for a metal layer thereof. A metallic lustrous member with electromagnetic wave transmissibility, which is capable of using silver (Ag), zinc (Zn), lead (Pb) or copper (Cu), or an alloy thereof, as a material for a metal layer thereof, in addition to aluminum (Al). The metallic lustrous member with electromagnetic wave transmissibility, comprises an indium oxide-containing layer provided along a surface of a substrate, and a metal layer laminated on the indium oxide-containing layer, wherein the metal layer includes, in at least part thereof, a plurality of portions which are in a discontinuous state.

Abstract: A transparent conductive film includes a crystalline transparent conductive layer obtained by forming an amorphous transparent conductive layer on a polymeric film substrate by sputtering, and crystallizing the amorphous transparent conductive layer. Defining that the amorphous transparent conductive layer has a carrier density represented by na×1019 and Hall mobility represented by ?a, that the crystalline transparent conductive layer has a carrier density represented by nc×1019 and Hall mobility represented by ?c, and that a length of motion L is represented by {(nc?na)2+(?c??a)}1/2, the amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10?60)×1019/cm3 and Hall mobility ?a of 10-25 cm2/V·s, and the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80?150)×1019/cm3 and Hall mobility ?c of 20-40 cm2/V·s, and the length of motion L is 50-150.

Abstract: A transparent conductive film includes a polymeric film substrate and a transparent conductive layer on at least one of main surfaces of the polymeric film substrate. The transparent conductive layer is a crystalline transparent conductive layer comprising an indium tin composite oxide. The transparent conductive layer has a residual stress of less than or equal to 600 MPa. The transparent conductive layer has a specific resistance of 1.1×10?4 ?·cm to 3.0×10?4 ?·cm. The transparent conductive layer has a thickness of 15 nm to 40 nm.

Abstract: Provided is a transparent conductive film that can drastically improving an electrical characteristic of a transparent conductive layer after crystallizing process with resped to the transparent conductive layer before the crystallizing process and can achieve a lower resistivity. The transparent conductive film (1) is provided with a film substrate (2) and a crystalline transparent conductive layer (3) formed on one of the main surfaces (2a) of the said substrate. The amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10 to 60)×1019/cm3 and Hall mobility ?a of 10 to 25 cm2/V·s, the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80 to 150)×1019/cm3 and Hall mobility t of 20 to 40 cm2/V·s, and the length of motion L defined by {(nc?na)2+(?c??a)2}1/2 is 50 to 150.