Abstract: A silicon etching solution contains: a quaternary ammonium hydroxide represented by the following Formula (1): R11R12R13R14N+·OH? (1) (in the formula, R11, R12, R13, and R14 are each independently an aryl group, a benzyl group, or an alkyl group having 1 to 4 carbon atoms, and the alkyl group, the aryl group, or the benzyl group may have a hydroxy group); a quaternary ammonium salt represented by the following Formula (2) and having 11 to 20 carbon atoms in total: R21R22R23R24N+·X? (2) (in the formula, one of R21, R22, R23, and R24 is an alkyl group having 16 or less carbon atoms, which may have a substituent, each of the remaining three is an alkyl group having 1 or 2 carbon atoms, the alkyl group having 16 or less carbon atoms and the alkyl group having 1 or 2 carbon atoms may have a hydroxy group, and X is at least one selected from the group consisting of BF4, a fluorine atom, a chlorine atom, and a bromine atom); a polyhydroxy compound having 2 to 12 carbon atoms and having two or more hydroxy groups in

Abstract: [Problem to be solved] Provided is a method for processing a substrate having high etching selectivity of silicon with respect to silicon-germanium and further having a high selection ratio of silicon with respect to a silicon oxide film and/or a silicon nitride film in surface processing when manufacturing various types of silicon devices, particularly various types of silicon composite semiconductor devices containing silicon-germanium. [Solution] A method for processing a substrate includes: bringing an etching solution into contact with a substrate including a silicon film and a silicon-germanium film to perform etching; and selectively removing the silicon film, in which the etching solution contains an organic alkali and water and has a dissolved oxygen concentration of 0.20 ppm or less.

Abstract: Silicon carbonitride with excellent dielectric and/or other properties may be used in manufacturing semiconductor devices. The manufacturing often requires etching silicon carbonitride without etching silicon oxide, but there is no known etching solution that sufficiently selectively etches silicon carbonitride containing carbon compared with silicon nitride used for the same purpose. An object of the present invention is to provide: an etching solution with a high etching selectivity ratio of silicon carbonitride to silicon oxide; a method of treating a substrate, the method including a step of bringing the etching solution into contact with the substrate; and a method of manufacturing a semiconductor device, the method including the method of treating a substrate. The object is achieved by an etching solution for etching silicon carbonitride, the etching solution composed of a homogeneous solution containing phosphoric acid, water, and a cerium ion.

Abstract: A silicon etching liquid which is characterized by containing a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium salt represented by formula (2) and water, and which is also characterized in that the concentration of the quaternary ammonium salt represented by formula (2) is more than 1% by mass but not more than 50% by mass. (1): R1R2R3R4N+·OH? (In formula (1), R1, R2, R3 and R4 may be the same groups or different groups, and each represents an optionally substituted alkyl group, aryl group or a benzyl group.) (2): R5R6R7R8N+·X? (In formula (2), R5, R6, R7 and R8 may be the same groups or different groups, and each represents an optionally substituted alkyl group having from 1 to 16 carbon atoms; and X represents BF4, a fluorine atom, a chlorine atom or a bromine atom.

Abstract: A silicon etching liquid which contains a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium iodide represented by formula (2), and water. (1): R11R12R13R14N+·OH? (In formula (1), each of R11, R12, R13 and R14 independently represents an aryl group, a benzyl group or an alkyl group having from 1 to 16 carbon atoms; and the alkyl group, the aryl group or the benzyl group may have a hydroxyl group.) (2): R21R22R23R24N+·I? (In formula (2), R21, R22, R23 and R24 may be the same groups or different groups, and each represents an optionally substituted aryl group, benzyl group or alkyl group having from 1 to 10 carbon atoms.

Abstract: An object of the present invention is to provide an etching liquid having a high silicon etch selectivity with respect to silicon-germanium and a high long term stability at a processing temperature, in surface processing during the production of various semiconductor devices, especially various silicon composite semiconductor devices containing silicon-germanium, and the problem is solved by a silicon etching liquid containing an alkaline compound, an aldehyde compound, and water, the aldehyde compound being a water-soluble aromatic aldehyde.

Abstract: An etching solution contains a quaternary ammonium compound as a main component, by which an etching rate for silicon is improved, no adhered substances are formed on an etching surface during etching, and the etching rate does not decrease even after continuous use for a long time. The silicon etching solution contains a phenol compound represented by the following Formula (1), a quaternary ammonium compound, and water, and has a pH of 12.5 or more. wherein R1 is a hydrogen atom, a hydroxy group, an alkyl group, an alkoxy group, or an amino group. R2 is a hydrogen atom, a hydroxy group, an alkoxy group, or an amino group. R1 and R2 are not hydrogen atoms at the same time. When R1 is a hydrogen atom, R2 is not a hydroxy group. When R1 is an alkyl group or a hydroxy group, R2 is not a hydrogen atom.

Abstract: An isotropic silicon etching solution contains a quaternary ammonium hydroxide; water; and the at least one compound selected from the group consisting of compounds represented by the following Formulas (1) and (2), in which the following Conditions 1 and 2 are satisfied. R1O—(CmH2mO)n—R2 ??(1) In the formula, R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 to 3. With the proviso that, R1 and R2 are not hydrogen atoms at the same time, and when m=2, a total number (n+C1+C2) of n, the number of carbon atoms (C1) of R1, and the number of carbon atoms (C2) of R2 is 5 or more. HO—(C2H4O)p—H ??(2) In the formula, p is an integer of 15 to 1,000. Condition 1: 0.2?etching rate ratio (R110/R100)?1 Condition 2: 0.

Abstract: A coating composition comprising (A) inorganic oxide fine particles, (B) a hydrolyzable group-containing organic silicon compound, (C) water or an acid aqueous solution, (D) a curing catalyst and (E) an organic solvent, wherein the inorganic oxide fine particles (A) contain 100 parts by mass of (A1) first inorganic oxide fine particles containing not less than 50 mass % of a zirconium oxide component and 0.1 to 90 parts by mass of (A2) cerium oxide fine particles. This coating composition is used to form a hard coat film.

Abstract: To provide a laminate comprising a pair of polycarbonate optical sheet or film which are laminated together through a polarizing film layer and an adhesive layer of a photochromic composition comprising (I) a polyurethane urea resin and (II) a photochromic compound and having excellent photochromic properties, adhesion, heat resistance, perspiration resistance and excellent adhesion to a lens substrate.

Abstract: To provide a laminate comprising a pair of polycarbonate optical sheet or film which are laminated together through a polarizing film layer and an adhesive layer of a photochromic composition comprising (I) a polyurethane urea resin and (II) a photochromic compound and having excellent photochromic properties, adhesion, heat resistance, perspiration resistance and excellent adhesion to a lens substrate.