Patents by Inventor Manato DEKI

Manato DEKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
    Publication number: 20240347343
    Abstract: A technology is provided to form p-type regions and to effectively reduce a contact resistance between the p-type region and an electrode. One embodiment of a nitride semiconductor device manufacturing method may include a magnesium layer formation step of forming a magnesium layer that comprises magnesium as a major component on a surface of a nitride semiconductor substrate. The method may include an annealing step of annealing the nitride semiconductor substrate on which the magnesium layer is formed.
    Type: Application
    Filed: February 15, 2022
    Publication date: October 17, 2024
    Inventors: Manato DEKI, Shun LU, Hiroshi AMANO, Yoshio HONDA, Atsushi TANAKA, Yuta ITO
  • LAMINATE AND SEMICONDUCTOR DEVICE
    Publication number: 20220393073
    Abstract: A stacked body may include a support, a buffer layer, and an electrode layer, in this order, wherein the buffer layer may include one or more metals selected from the group consisting of Ga, Al, In, and Zn, and oxygen, the electrode layer comprises an oxide of magnesium and an oxide of zinc, and the electrode layer has a half width of a diffraction peak observed at 2?=34.8±0.5 deg in X-ray diffraction measurement of 0.43 deg or smaller.
    Type: Application
    Filed: November 2, 2020
    Publication date: December 8, 2022
    Applicants: IDEMITSU KOSAN CO.,LTD., NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, NIKKISO CO., LTD.
    Inventors: Shigekazu TOMAI, Yoshihiro UEOKA, Satoshi KATSUMATA, Maki KUSHIMOTO, Manato DEKI, Yoshio HONDA, Hiroshi AMANO
  • OXIDE STACKED BODY AND METHOD FOR PRODUCING THE SAME
    Publication number: 20220037561
    Abstract: A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10?2 S/cm or more.
    Type: Application
    Filed: September 26, 2019
    Publication date: February 3, 2022
    Applicants: IDEMITSU KOSAN CO.,LTD., NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, NIKKISO CO., LTD.
    Inventors: Yoshihiro UEOKA, Shigekazu TOMAI, Satoshi KATSUMATA, Maki KUSHIMOTO, Manato DEKI, Yoshio HONDA, Hiroshi AMANO