Abstract: Semiconductor devices may include an active pattern, a gate structure in an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure on a lower portion of a sidewall of the bit line structure, and an upper spacer structure on an upper portion of the sidewall of the bit line structure. The lower spacer structure includes first and second lower spacers sequentially stacked, the first lower spacer contacts the lower portion of the sidewall of the bit line structure and does not include nitrogen, and the second lower spacer includes a material different from the first lower spacer. A portion of the upper spacer structure contacting the upper portion of the sidewall of the bit line structure includes a material different from the first lower spacer.

Abstract: Semiconductor devices may include an active pattern, a gate structure in an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure on a lower portion of a sidewall of the bit line structure, and an upper spacer structure on an upper portion of the sidewall of the bit line structure. The lower spacer structure includes first and second lower spacers sequentially stacked, the first lower spacer contacts the lower portion of the sidewall of the bit line structure and does not include nitrogen, and the second lower spacer includes a material different from the first lower spacer. A portion of the upper spacer structure contacting the upper portion of the sidewall of the bit line structure includes a material different from the first lower spacer.

Abstract: Semiconductor devices may include an active pattern, a gate structure in an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure on a lower portion of a sidewall of the bit line structure, and an upper spacer structure on an upper portion of the sidewall of the bit line structure. The lower spacer structure includes first and second lower spacers sequentially stacked, the first lower spacer contacts the lower portion of the sidewall of the bit line structure and does not include nitrogen, and the second lower spacer includes a material different from the first lower spacer. A portion of the upper spacer structure contacting the upper portion of the sidewall of the bit line structure includes a material different from the first lower spacer.

Abstract: Provided is a composition and method for treating cancer in a patient in need of cancer treatment, and the cancer can be treated by a combined therapeutic use of squirrel poxvirus and myxoma poxvirus.

Abstract: Compositions and methods are provided that relate to an attenuated reovirus exhibiting oncolytic activity toward cancer cells while displaying reduced lytic activity toward non-malignant cells. Exemplified is an attenuated human reovirus derived from persistently infected fibrosarcoma cells that lacks wild-type reovirus S1 and S4 genes and consequently lacks a detectable reoviral outer capsid .sigma.1 protein and expresses a mutated reoviral outer capsid .sigma.3 protein.

Abstract: The present invention relates to methods for killing neoplastic cells, such as ras-activated cancerous cells, in vitro. In particular embodiments, an attenuated reovirus (e.g., a reovirus lacking a wild-type S1 gene) may be administered to a mixed cellular composition comprising cancerous cells and stem cells such as adult stem cells and/or hematopoietic stem cells; in these embodiments, the attenuated reovirus may result in killing of the cancerous cells with little or no damage to the healthy stem cells.

Abstract: Compositions and methods are provided that relate to an attenuated reovirus exhibiting oncolytic activity toward cancer cells while displaying reduced lytic activity toward non-malignant cells. Exemplified is an attenuated human reovirus derived from persistently infected fibrosarcoma cells that lacks wild-type reovirus S1 and S4 genes and consequently lacks a detectable reoviral outer capsid ?1 protein and expresses a mutated reoviral outer capsid ?3 protein.

Abstract: Compositions and methods are provided that relate to an attenuated reovirus exhibiting oncolytic activity toward cancer cells while displaying reduced lytic activity toward non-malignant cells. Exemplified is an attenuated human reovirus derived from persistently infected fibrosarcoma cells that lacks wild-type reovirus S1 and S4 genes and consequently lacks a detectable reoviral outer capsid .sigma.1 protein and expresses a mutated reoviral outer capsid .sigma.3 protein.

Abstract: Compositions and methods are provided that relate to an attenuated reovirus exhibiting oncolytic activity toward cancer cells while displaying reduced lytic activity toward non-malignant cells. Exemplified is an attenuated human reovirus derived from persistently infected fibrosarcoma cells that lacks wild-type reovirus S1 and S4 genes and consequently lacks a detectable reoviral outer capsid ?1 protein and expresses a mutated reoviral outer capsid ?3 protein.

Abstract: The present invention relates to methods for killing neoplastic cells, such as ras-activated cancerous cells, in vitro. In particular embodiments, an attenuated reovirus (e.g., a reovirus lacking a wild-type S1 gene) may be administered to a mixed cellular composition comprising cancerous cells and stem cells such as adult stem cells and/or hematopoietic stem cells; in these embodiments, the attenuated reovirus may result in killing of the cancerous cells with little or no damage to the healthy stem cells.

Abstract: The present invention provides inhibitors of viral replication, and methods related thereto. In general, such compounds can be classified as peptidyl fluoromethylketones (PFMKs). The PFMK compounds may be used to partially or completely inhibit viral infection. In certain embodiments, Z-FA-FMK may be used to inhibit replication of a reovirus, such as a wild-type or attenuated reovirus, or a leporipoxvirus, such as myxoma virus. These compounds may be useful for controlling viral infectivity in vivo and/or in vitro.

Abstract: The conventional super VGA (video graphic array) monitor interface circuit controls the output mode of the monitor according to the width and polarity of vertical and horizontal synchronizing input signals, so it has disadvantage that it is difficult to control the output mode of the monitor when the width and polarity of the vertical and horizontal synchronizing input signals are different according to the kind of video cards. The present invention is such that the vertical and horizontal synchronizing signals are employed as an input signal. If the input signal is negative polarity, it is converted to positive polarity for output and, if the input signal is positive polarity, it is output with positive polarity. The signal separating part divides the input signal connected to the above polarity converting part into an 800.times.600 mode, a 1024.times.768 mode or any other mode.