Patents by Inventor Manchao Xiao

Manchao Xiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Organoaminosilane Precursors and Methods for Depositing Films Comprising Same
    Publication number: 20170207084
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Application
    Filed: April 5, 2017
    Publication date: July 20, 2017
    Applicant: Versum Materials US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same
    Publication number: 20170183502
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
    Type: Application
    Filed: March 17, 2017
    Publication date: June 29, 2017
    Applicant: VERSUM MATERIALS US, LLC
    Inventors: Steven Gerard Mayorga, Heather Regina Bowen, Xinjian Lei, Manchao Xiao, Haripin Chandra, Anupama Mallikarjunan, Ronald Martin Pearlstein
  • Methods for Depositing Films with Organoaminodisilane Precursors
    Publication number: 20170186605
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
    Type: Application
    Filed: March 15, 2017
    Publication date: June 29, 2017
    Applicant: Versum Materials US, LLC
    Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
  • Alkoxyaminosilane compounds and applications thereof
    Patent number: 9677178
    Abstract: Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5 ??Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: June 13, 2017
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Daniel P. Spence, Xinjian Lei, Ronald Martin Pearlstein, Manchao Xiao, Richard Ho
  • Precursors for CVD silicon carbo-nitride films
    Patent number: 9640386
    Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: May 2, 2017
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Manchao Xiao, Arthur Kenneth Hochberg
  • Organoaminodisilane precursors and methods for depositing films comprising same
    Patent number: 9627193
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: April 18, 2017
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Steven Gerard Mayorga, Heather Regina Bowen, Xinjian Lei, Manchao Xiao, Haripin Chandra, Anupama Mallikarjunan, Ronald Martin Pearlstein
  • Methods for depositing films with organoaminodisilane precursors
    Patent number: 9613799
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: April 4, 2017
    Assignee: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
  • High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films
    Publication number: 20160365244
    Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500° C. is disclosed. Silicon precursors used have a formula of: R1R2mSi(NR3R4)nXp ??I. wherein R1, R2, and R3 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R4 is selected from, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group. a C3 to C10 alkylsilyl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0, 1 or 2; and p is 0, 1 or 2 and m+n+p=3; and R1R2mSi(OR3)n(OR4)qXp ??II.
    Type: Application
    Filed: August 26, 2016
    Publication date: December 15, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Haripin Chandra, Meiliang Wang, Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Mark Leonard O'Neill, Bing Han
  • Compositions and Processes for Depositing Carbon-Doped Silicon-Containing Films
    Publication number: 20160351389
    Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
    Type: Application
    Filed: August 10, 2016
    Publication date: December 1, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Haripin Chandra, Eugene Jospeh Karwacki, JR., Bing Han, Mark Leonard O'Neill
  • Methods to prepare silicon-containing films
    Patent number: 9502234
    Abstract: Described herein are methods of forming dielectric films such as non-porous dielectric films, comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer. Specifically the methods include silanes that have bulky alkoxy groups as well as SiH groups. Examples of such silanes used in the methods including di-tert-pentoxysilane, di-tert-butoxysilane and silanes having the formula (H)2Si(OR)(OR1) wherein R is tert-butyl and R1 is selected from the group consisting of methyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, pentyl, isopentyl, tert-pentyl and hexyl.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: November 22, 2016
    Assignee: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill
  • High temperature atomic layer deposition of silicon oxide thin films
    Patent number: 9460912
    Abstract: Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof R1R2mSi(NR3R4)nXp; and??I. R1R2mSi(OR3)n(OR4)qXp.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: October 4, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Haripin Chandra, Meiliang Wang, Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Mark Leonard O'Neill, Bing Han
  • Compositions and processes for depositing carbon-doped silicon-containing films
    Patent number: 9447287
    Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3?x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3?x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: September 20, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Haripin Chandra, Eugene Joseph Karwacki, Jr., Bing Han, Mark Leonard O'Neill
  • BISAMINOALKOXYSILANE COMPOUNDS AND METHODS FOR USING SAME TO DEPOSIT SILICON-CONTAINING FILMS
    Publication number: 20160237100
    Abstract: Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein: R1Si(NR2R3)(NR4R5)OR6??I where R1 is selected from hydrogen, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group; R2, R3, R4, and R5 are each independently selected from hydrogen, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group; R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group.
    Type: Application
    Filed: February 8, 2016
    Publication date: August 18, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Daniel P. Spence, Xinjian Lei, Ronald Martin Pearlstein, Manchao Xiao, Jianheng Li
  • METHODS FOR DEPOSITING FILMS WITH ORGANOAMINODISILANE PRECURSORS
    Publication number: 20160203975
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
    Type: Application
    Filed: March 18, 2016
    Publication date: July 14, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
  • ORGANOAMINOSILANES AND METHODS FOR MAKING SAME
    Publication number: 20160168169
    Abstract: Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.
    Type: Application
    Filed: December 2, 2015
    Publication date: June 16, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Matthew R. MacDonald, Richard Ho, Xinjian Lei
  • Methods for depositing films with organoaminodisilane precursors
    Patent number: 9337018
    Abstract: A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below: wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: May 10, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
  • SILICON-BASED FILMS AND METHODS OF FORMING THE SAME
    Publication number: 20160122869
    Abstract: Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain <50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 0 to about 55, y is about 35 to about 100, and z is about 0 to about 50 atomic weight (wt.) percent (%) as measured by XPS. In another aspect, the silicon-based films were deposited using at least one organosilicon precursor comprising two silicon atoms, at least one Si-Me group, and an ethylene or propylene linkage between the silicon atoms such as 1,4-disilapentane.
    Type: Application
    Filed: October 27, 2015
    Publication date: May 5, 2016
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Xinjian Lei, Anupama Mallikarjunan, Matthew R. MacDonald, Manchao Xiao
  • ALKOXYAMINOSILANE COMPOUNDS AND APPLICATIONS THEREOF
    Publication number: 20160083847
    Abstract: Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5 ??Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.
    Type: Application
    Filed: November 13, 2015
    Publication date: March 24, 2016
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Daniel P. Spence, Xinjian Lei, Ronald Martin Pearlstein, Manchao Xiao, Richard Ho
  • Methods of forming non-oxygen containing silicon-based films
    Patent number: 9243324
    Abstract: Methods for forming non-oxygen containing silicon-based films, that contain >50 atomic % of silicon, are provided herein. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: January 26, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Heather Regina Bowen, Jianheng Li, Mark Leonard O'Neill, Manchao Xiao, Andrew David Johnson, Xinjian Lei
  • Organoaminosilanes and methods for making same
    Patent number: 9233990
    Abstract: Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.
    Type: Grant
    Filed: February 18, 2015
    Date of Patent: January 12, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Matthew R. MacDonald, Richard Ho, Xinjian Lei