Patents by Inventor Mandar B. Pandit

Mandar B. Pandit has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160005596
    Abstract: Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source: plasma-initiating gas: dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.
    Type: Application
    Filed: February 14, 2014
    Publication date: January 7, 2016
    Inventors: Swayambhu P. BEHERA, Shahid SHAIKH, Pramit MANNA, Mandar B. PANDIT, Tersem SUMMAN, Patrick REILLY, Deenesh PADHI, Bok Hoen KIM, Heung Lak PARK, Derek R. WITTY
  • Publication number: 20150118832
    Abstract: Embodiments of the present invention provide a methods for patterning a hardmask layer with good process control for an ion implantation process, particularly suitable for manufacturing the fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of patterning a hardmask layer disposed on a substrate includes forming a planarization layer over a hardmask layer disposed on a substrate, disposing a patterned photoresist layer over the planarization layer, patterning the planarization layer and the hardmask layer uncovered by the patterned photoresist layer in a processing chamber, exposing a first portion of the underlying substrate, and removing the planarization layer from the substrate.
    Type: Application
    Filed: October 24, 2013
    Publication date: April 30, 2015
    Inventors: Bingxi Sun WOOD, Li Yan MIAO, Huixiong DAI, Adam BRAND, Yongmei CHEN, Mandar B. PANDIT, Qingjun ZHOU
  • Publication number: 20140162414
    Abstract: A method to selectively process a three dimensional device, comprising providing a substrate having a first surface that extends horizontally, the substrate comprising a structure containing a second surface that extends vertically from the first surface; providing a film on the substrate, the film comprising carbon species; and etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, where the etchant excludes oxygen species and fluorine species.
    Type: Application
    Filed: December 11, 2013
    Publication date: June 12, 2014
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nilay A. Pradhan, Benjamin Colombeau, Naushad K. Variam, Mandar B. Pandit, Christopher Dennis Bencher, Adam Brand
  • Publication number: 20120171852
    Abstract: Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
    Type: Application
    Filed: August 2, 2010
    Publication date: July 5, 2012
    Inventors: Zheng Yuan, Mandar B. Pandit, Francimar C. Schmitt, Yi Zheng, Fan Yang, Lipan Li, Alan Tso, Dustin W. Ho, Tom K. Cho, Randhir Thakur