Patents by Inventor Mandar R. Deshpande

Mandar R. Deshpande has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6204513
    Abstract: A heterostructure interband tunneling diode includes a contact layer comprising indium gallium arsenide of a first conductivity type, an injection layer comprising indium gallium arsenide of a second conductivity type, a first doped layer of the first conductivity type positioned adjacent to the contact layer, and a second doped layer of a second conductivity type juxtaposed between the first doped layer and the injection layer, wherein at least one of the first and second tunnel barrier layers comprises indium aluminium arsenide. A second embodiment includes a doped layer of the first conductivity type positioned adjacent to the contact layer, and a barrier layer positioned adjacent to the injection layer, and a quantum well layer comprising indium gallium arsenide juxtaposed between the doped layer and the barrier layer, wherein at least one of the doped and barrier layers comprises indium aluminium arsenide.
    Type: Grant
    Filed: May 4, 1999
    Date of Patent: March 20, 2001
    Assignee: Motorola, Inc.
    Inventors: Nada El-Zein, Jonathan Lewis, Mandar R. Deshpande