Patents by Inventor Mandyam Ammanjee Sriram

Mandyam Ammanjee Sriram has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190376186
    Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.
    Type: Application
    Filed: December 28, 2018
    Publication date: December 12, 2019
    Inventors: Jason Dirk Haverkamp, Pramod Subramonium, Joseph L. Womack, Dong Niu, Keith Fox, John B. Alexy, Patrick G. Breiling, Jennifer Leigh Petraglia, Mandyam Ammanjee Sriram, George Andrew Antonelli, Bart J. van Schravendijk
  • Publication number: 20140235069
    Abstract: An apparatus for use with radical sources for supplying radicals during semiconductor processing operations is provided. The apparatus may include a stack of plates or components that form a faceplate assembly. The faceplate assembly may include a radical diffuser plate, a precursor delivery plate, and a thermal isolator interposed between the radical diffuser plate and the precursor delivery plate. The faceplate assembly may have a pattern of radical through-holes with centerlines substantially perpendicular to the radical diffuser plate. The thermal isolator may be configured to regulate heat flow between the radical diffuser plate and the precursor delivery plate.
    Type: Application
    Filed: July 3, 2013
    Publication date: August 21, 2014
    Inventors: Patrick G. Breiling, Bhadri N. Varadarajan, Jennifer L. Petraglia, Bart J. van Schravendijk, Karl F. Leeser, Mandyam Ammanjee Sriram, Rachel E. Batzer
  • Patent number: 6017654
    Abstract: Crystalline lithiated transition metal oxide materials having a rhombohedral R-3m crystal structure includes divalent cations selected and added in amounts so that all or a portion of the divalent cations occupy sites in transition metal atom layers within the materials' crystal lattice. The lithiated transition metal oxides are useful as cathode materials in lithium-ion secondary cells. The materials include, but are not limited to, Li.sub.1+x Ni.sub.1-y M.sub.y N.sub.x O.sub.2(1+x) and Li.sub.1 Ni.sub.1-y M.sub.y N.sub.x O.sub.p, wherein M is a transition metal selected from titanium, vanadium, chromium, manganese, iron, cobalt, and aluminum, and N is a group II element selected from magnesium, calcium, strontium, barium, and zinc. The materials provide improved cyclability and high voltage capacity as cathodes in lithium-ion secondary cells. Processes for producing the divalent cation-containing lithium transition metal oxide materials of the invention are also disclosed.
    Type: Grant
    Filed: August 4, 1997
    Date of Patent: January 25, 2000
    Assignee: Carnegie Mellon University
    Inventors: Prashant Nagesh Kumta, Chun-Chieh Chang, Mandyam Ammanjee Sriram