Patents by Inventor Manfred Druminski

Manfred Druminski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor laser in the system GaAlInAs
    Patent number: 5034956
    Abstract: A semiconductor laser on an InP substrate having a first confinement layer and a second confinement layer of (Ga.sub.0.17 Al.sub.0.83).sub.0.48 In.sub.0.52 As and an active layer in quantum well structure having radiation-generating QW-layers of Ga.sub.1-y In.sub.y As.
    Type: Grant
    Filed: November 2, 1989
    Date of Patent: July 23, 1991
    Assignee: Siemens Aktiengesellschaft
    Inventors: Roland Gessner, Margit Beschorner, Manfred Druminski
  • Process for the production of extremely flat silicon troughs by selective etching with subsequent rate controlled epitaxial refill
    Patent number: 4141765
    Abstract: The invention relates to a method for the production of extremely flat silicon troughs in a silicon substrate for MOS-transistors. The object is generally achieved by a localized etching process resulting in a slightly anisotropic trough characteristic and a subsequent rate controlled filling by a selection epitaxy process of said trough with a silicon material. The process is found to minimize the deleterious non-uniformities inherent in the prior art.
    Type: Grant
    Filed: April 18, 1978
    Date of Patent: February 27, 1979
    Assignee: Siemens Aktiengesellschaft
    Inventors: Manfred Druminski, Roland Gessner
  • Method of producing epitaxially semiconductor layers
    Patent number: 3941647
    Abstract: Method of producing epitaxially deposited layers of semiconductor material on a substrate by thermal decomposition of a gaseous compound of a select semiconductor material and depositing a seed layer of such semiconductor on the substrate and then adding a hydrogen halide to the gaseous compound and depositing additional semiconductor material on the seed layer.
    Type: Grant
    Filed: March 8, 1973
    Date of Patent: March 2, 1976
    Assignee: Siemens Aktiengesellschaft
    Inventor: Manfred Druminski