Patents by Inventor Manfred Frank

Manfred Frank has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9362127
    Abstract: A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second region and the porous metal layer is lower than an adhesive force between the first region and the porous metal layer.
    Type: Grant
    Filed: July 23, 2013
    Date of Patent: June 7, 2016
    Assignee: Infineon Technologies AG
    Inventors: Michael Krenzer, Thomas Kunstmann, Eva-Maria Hess, Manfred Frank
  • Publication number: 20160086842
    Abstract: A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.
    Type: Application
    Filed: December 1, 2015
    Publication date: March 24, 2016
    Inventors: CARSTEN AHRENS, RUDOLF BERGER, MANFRED FRANK, UWE HOECKELE, BERNHARD KNOTT, ULRICH KRUMBEIN, WOLFGANG LEHNERT, BERTHOLD SCHUDERER, JUERGEN WAGNER, STEFAN WILLKOFER
  • Patent number: 9236290
    Abstract: A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: January 12, 2016
    Assignee: Infineon Technologies AG
    Inventors: Carsten Ahrens, Rudolf Berger, Manfred Frank, Uwe Hoeckele, Bernhard Knott, Ulrich Krumbein, Wolfgang Lehnert, Berthold Schuderer, Juergen Wagner, Stefan Willkofer
  • Publication number: 20150031203
    Abstract: A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second region and the porous metal layer is lower than an adhesive force between the first region and the porous metal layer.
    Type: Application
    Filed: July 23, 2013
    Publication date: January 29, 2015
    Inventors: Michael KRENZER, Thomas KUNSTMANN, Eva-Maria HESS, Manfred FRANK
  • Publication number: 20140242374
    Abstract: Various methods, apparatuses and devices relate to porous metal layers on a substrate which are three-dimensionally coated. In one embodiment, a porous metal layer is deposited over a substrate. The porous metal layer can be three-dimensionally coated with a coating material.
    Type: Application
    Filed: February 22, 2013
    Publication date: August 28, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Johann Strasser, Thomas Kunstmann, Manfred Frank, Werner Robl, Maximilian Krug, Simon Faiss, Matthias Mueller
  • Patent number: 8338317
    Abstract: According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: December 25, 2012
    Assignee: Infineon Technologies AG
    Inventors: Manfred Engelhardt, Hans-Joerg Timme, Ivan Nikitn, Manfred Frank, Thomas Kunstmann, Werner Robl, Guenther Ruhl
  • Publication number: 20120289023
    Abstract: A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.
    Type: Application
    Filed: February 3, 2012
    Publication date: November 15, 2012
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Carsten Ahrens, Rudolf Berger, Manfred Frank, Uwe Hoeckele, Bernhard Knott, Ulrich Krumbein, Wolfgang Lehnert, Berthold Schuderer, Juergen Wagner, Stefan Willkofer
  • Publication number: 20120256323
    Abstract: According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.
    Type: Application
    Filed: April 6, 2011
    Publication date: October 11, 2012
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Manfred Engelhardt, Hans-Joerg Timme, Ivan Nikitn, Manfred Frank, Thomas Kunstmann, Werner Robl, Guenther Ruhl
  • Patent number: 8101517
    Abstract: One or more embodiments may relate to a method for making a semiconductor structure, the method including: forming an opening at least partially through a workpiece; and forming an enclosed cavity within the opening, the forming the cavity comprising forming a paste within the opening.
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: January 24, 2012
    Assignee: Infineon Technologies AG
    Inventors: Manfred Frank, Ivan Nikitin, Thomas Kunstmann
  • Publication number: 20110074040
    Abstract: One or more embodiments may relate to a method for making a semiconductor structure, the method including: forming an opening at least partially through a workpiece; and forming an enclosed cavity within the opening, the forming the cavity comprising forming a paste within the opening.
    Type: Application
    Filed: September 29, 2009
    Publication date: March 31, 2011
    Inventors: Manfred Frank, Thomas Kunstmann, Ivan Nikitin
  • Patent number: 6973205
    Abstract: To increase the scratch resistance of a surface passivation, in particular, for fingerprint sensors, a antifrictional layer is applied to reduce the shearing forces. The antifrictional layer includes fat, oil, surfactants and/or wax. The antifrictional layer is preferably an emulsion including water, paraffin oil, propylene glycol, stearic acid, palmitic acid, TEA, beeswax, carbormer 954, methylparaben, propylparaben and possibly perfume.
    Type: Grant
    Filed: February 4, 2002
    Date of Patent: December 6, 2005
    Assignee: Infineon Technologies AG
    Inventors: Manfred Frank, Werner Kröninger, Renate Köpnick, Richard Hummel, Reinhard Fischbach, Heinz Opolka
  • Patent number: 6531676
    Abstract: A method of producing an electrically conductive connection by laser radiation includes providing a connecting wire of a material with a higher melting temperature providing a connecting carrier of a material with a lower melting temperature, joining the connecting wire with the connecting carrier without an additional material, melting the connecting carrier with a lower melting temperature, and melting the connecting wire with a higher melting temperature on an outer surface.
    Type: Grant
    Filed: January 16, 2001
    Date of Patent: March 11, 2003
    Assignee: Robert Bosch GmbH
    Inventors: Robert Schwemmer, Manfred Frank
  • Publication number: 20020114496
    Abstract: To increase the scratch resistance of a surface passivation, in particular, for fingerprint sensors, a antifrictional layer is applied to reduce the shearing forces. The antifrictional layer includes fat, oil, surfactants and/or wax. The antifrictional layer is preferably an emulsion including water, paraffin oil, propylene glycol, stearic acid, palmitic acid, TEA, beeswax, carbormer 954, methylparaben, propylparaben and possibly perfume.
    Type: Application
    Filed: February 4, 2002
    Publication date: August 22, 2002
    Inventors: Manfred Frank, Werner Kroninger, Renate Kopnick, Richard Hummel, Reinhard Fischbach, Heinz Opolka
  • Publication number: 20010011418
    Abstract: A method of producing an electrically conductive connection by laser radiation includes providing a connecting wire of a material with a higher melting temperature providing a connecting carrier of a material with a lower melting temperature, joining the connecting wire with the connecting carrier without an additional material, melting the connecting carrier with a lower melting temperature, and melting the connecting wire with a higher melting temperature on an outer surface.
    Type: Application
    Filed: January 16, 2001
    Publication date: August 9, 2001
    Inventors: Robert Schwemmer, Manfred Frank
  • Patent number: 5612691
    Abstract: In an ergonomic keyboard comprising at least two housing sections with separate key pads wherein the two housing sections are interconnected by a joint permitting pivoting and also tilting of the two housing sections relative to each other, the joint comprises a coil spring which extends between, and is connected to, the two housing sections at the end of the housing sections remote from an operator so as to form a universal joint between the two housing sections, and a sector-shaped indexing plate is mounted with one end firmly to one of the housing sections and extends into the other housing section so that it bridges any gap formed between the two housing sections when they are pivoted apart, and the other housing section has a guide pin projecting into a partial circular guide slot formed in the indexing plate and having a center of curvature coinciding with the universal joint pivoting center for guiding the two housing sections relative to each other.
    Type: Grant
    Filed: March 2, 1995
    Date of Patent: March 18, 1997
    Assignee: Cherry Mikroschalter GmbH
    Inventors: Gunter Murmann, Manfred Frank
  • Patent number: 5252952
    Abstract: A cursor control device moves from a precise zero rest position to define x-y coordinates for moving a cursor on a computer screen. When an actuating force is removed, the deflected control device is precisely returned to its zero rest position by operation of springs. The device provides relative cursor position data by reference to the zero rest position. The position data is converted to electrical signals which are utilized to position the cursor on the screen.
    Type: Grant
    Filed: August 13, 1991
    Date of Patent: October 12, 1993
    Assignee: The Cherry Corporation
    Inventors: Manfred Frank, Gunter Murmann
  • Patent number: 5120952
    Abstract: In a device for ascertaining the actual feed transmittted by an feed device f an industrial sewing machine to a material to be sewn, in which the number of the threads moved across a sensor arrangement is counted and the feed is calculated from the previously detected thread density, it is provided, for obtaining an exact thread count which is as independent as possible of the orientation of the sewn web, to place ahead of the photocell (10) of the sensor arrangement a rotating slit diaphragm (7) with at least one radially extending parallel limited slit (8). Preferably a second, rotationally adjustable, but fixed slit diaphragm (5) is provided, having slits (6) opening across a set angular sector, the rotatitng slit diaphragm (7) having a larger number of slits (8). Because of this the required rpm of the slit diaphragm (7) can be reduced. To avoid errors caused by the pattern of the material it is possible to operate in the relatively longer wave infrared spectrum.
    Type: Grant
    Filed: June 28, 1990
    Date of Patent: June 9, 1992
    Assignee: Durkopp Adler Aktiengesellschaft and PFAFF Industriemaschinen GmbH
    Inventors: Heribert Geisselmann, Manfred Frank
  • Patent number: 5103749
    Abstract: Patterns of two fabric layers are each recognized by a camera and the fabric layers are aligned to make these patterns agree in the transverse and longitudinal directions. According to the invention the influence of speed-related disturbance variables and pattern-related limitations during the generation of the signal is reduced. Two-dimensional images of the two fabric layers are recorded with a matrix camera each during a pause between feeds. The degree of congurence of the fabric layers according to the pattern is determined by two-dimensional cross-correlation analysis of the image points arranged in rows and columns. Aligning correction values are calculated from this degree. The edge distance of the fabric layers is determined with a section of the matrix sensors, which is a separate section in terms of evaluation. Based on the edge distance data, the lower fabric layer is adjusted to the correct distance continuously and the upper fabric layer is adjusted as needed.
    Type: Grant
    Filed: February 13, 1991
    Date of Patent: April 14, 1992
    Assignee: Pfaff Industriemaschinen GmbH
    Inventors: Heribert Geisselmann, Manfred Frank, Fritz Jehle, Erich Willenbacher
  • Patent number: 5076147
    Abstract: The pressure sensor consists of a substrate and a diaphragm joined together around the periphery so as to form a chamber. The surface of the diaphragm facing away from the substrate is exposed to a medium whose pressure is to be measured. To protect the diaphragm against corrosion or abrasion, the diaphragm surface exposed to the medium is covered with a layer of silicon carbide, preferably by chemical vapor deposition.
    Type: Grant
    Filed: March 26, 1990
    Date of Patent: December 31, 1991
    Assignee: Endress u. Hauser GmbH u. Co.
    Inventors: Frank Hegner, Manfred Frank
  • Patent number: 5050034
    Abstract: The substrate (12) and/or the diaphragm (11) of the pressure sensor (10) are made of ceramic, glass, or a single-crystal material. The side of the diaphragm (11) facing the substrate (12) is covered with a layer of silicon carbide, niobium, or tantalum which, in turn, is covered with a protective layer (21) and serves as one capacitor electrode (14). The side of the substrate (12) facing the diaphragm (11) is covered with at least one additional layer of any one of said materials which, in turn, is covered with an additional protective layer (22) and serves as the second capacitor electrode (15). Substrate (12) and diaphragm (11) are soldered together by a formed part of active solder (20) which also serves as a spacer.This pressure sensor can be manufactured in a single soldering step. The maximum load capacity of the diaphragm is determined not by the strength of the joint, but only by the strength of the diaphragm material.
    Type: Grant
    Filed: August 21, 1990
    Date of Patent: September 17, 1991
    Assignee: Endress u. Hauser GmbH u. Co.
    Inventors: Frank Hegner, Manfred Frank, Thomas Klahn