Abstract: A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second region and the porous metal layer is lower than an adhesive force between the first region and the porous metal layer.

Abstract: A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

Abstract: A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

Abstract: A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second region and the porous metal layer is lower than an adhesive force between the first region and the porous metal layer.

Abstract: Various methods, apparatuses and devices relate to porous metal layers on a substrate which are three-dimensionally coated. In one embodiment, a porous metal layer is deposited over a substrate. The porous metal layer can be three-dimensionally coated with a coating material.

Abstract: According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.

Abstract: A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

Abstract: According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.

Abstract: One or more embodiments may relate to a method for making a semiconductor structure, the method including: forming an opening at least partially through a workpiece; and forming an enclosed cavity within the opening, the forming the cavity comprising forming a paste within the opening.

Abstract: One or more embodiments may relate to a method for making a semiconductor structure, the method including: forming an opening at least partially through a workpiece; and forming an enclosed cavity within the opening, the forming the cavity comprising forming a paste within the opening.

Abstract: To increase the scratch resistance of a surface passivation, in particular, for fingerprint sensors, a antifrictional layer is applied to reduce the shearing forces. The antifrictional layer includes fat, oil, surfactants and/or wax. The antifrictional layer is preferably an emulsion including water, paraffin oil, propylene glycol, stearic acid, palmitic acid, TEA, beeswax, carbormer 954, methylparaben, propylparaben and possibly perfume.

Abstract: A method of producing an electrically conductive connection by laser radiation includes providing a connecting wire of a material with a higher melting temperature providing a connecting carrier of a material with a lower melting temperature, joining the connecting wire with the connecting carrier without an additional material, melting the connecting carrier with a lower melting temperature, and melting the connecting wire with a higher melting temperature on an outer surface.

Abstract: To increase the scratch resistance of a surface passivation, in particular, for fingerprint sensors, a antifrictional layer is applied to reduce the shearing forces. The antifrictional layer includes fat, oil, surfactants and/or wax. The antifrictional layer is preferably an emulsion including water, paraffin oil, propylene glycol, stearic acid, palmitic acid, TEA, beeswax, carbormer 954, methylparaben, propylparaben and possibly perfume.

Abstract: A method of producing an electrically conductive connection by laser radiation includes providing a connecting wire of a material with a higher melting temperature providing a connecting carrier of a material with a lower melting temperature, joining the connecting wire with the connecting carrier without an additional material, melting the connecting carrier with a lower melting temperature, and melting the connecting wire with a higher melting temperature on an outer surface.

Abstract: In an ergonomic keyboard comprising at least two housing sections with separate key pads wherein the two housing sections are interconnected by a joint permitting pivoting and also tilting of the two housing sections relative to each other, the joint comprises a coil spring which extends between, and is connected to, the two housing sections at the end of the housing sections remote from an operator so as to form a universal joint between the two housing sections, and a sector-shaped indexing plate is mounted with one end firmly to one of the housing sections and extends into the other housing section so that it bridges any gap formed between the two housing sections when they are pivoted apart, and the other housing section has a guide pin projecting into a partial circular guide slot formed in the indexing plate and having a center of curvature coinciding with the universal joint pivoting center for guiding the two housing sections relative to each other.

Abstract: A cursor control device moves from a precise zero rest position to define x-y coordinates for moving a cursor on a computer screen. When an actuating force is removed, the deflected control device is precisely returned to its zero rest position by operation of springs. The device provides relative cursor position data by reference to the zero rest position. The position data is converted to electrical signals which are utilized to position the cursor on the screen.

Abstract: In a device for ascertaining the actual feed transmittted by an feed device f an industrial sewing machine to a material to be sewn, in which the number of the threads moved across a sensor arrangement is counted and the feed is calculated from the previously detected thread density, it is provided, for obtaining an exact thread count which is as independent as possible of the orientation of the sewn web, to place ahead of the photocell (10) of the sensor arrangement a rotating slit diaphragm (7) with at least one radially extending parallel limited slit (8). Preferably a second, rotationally adjustable, but fixed slit diaphragm (5) is provided, having slits (6) opening across a set angular sector, the rotatitng slit diaphragm (7) having a larger number of slits (8). Because of this the required rpm of the slit diaphragm (7) can be reduced. To avoid errors caused by the pattern of the material it is possible to operate in the relatively longer wave infrared spectrum.

Abstract: Patterns of two fabric layers are each recognized by a camera and the fabric layers are aligned to make these patterns agree in the transverse and longitudinal directions. According to the invention the influence of speed-related disturbance variables and pattern-related limitations during the generation of the signal is reduced. Two-dimensional images of the two fabric layers are recorded with a matrix camera each during a pause between feeds. The degree of congurence of the fabric layers according to the pattern is determined by two-dimensional cross-correlation analysis of the image points arranged in rows and columns. Aligning correction values are calculated from this degree. The edge distance of the fabric layers is determined with a section of the matrix sensors, which is a separate section in terms of evaluation. Based on the edge distance data, the lower fabric layer is adjusted to the correct distance continuously and the upper fabric layer is adjusted as needed.

Abstract: The pressure sensor consists of a substrate and a diaphragm joined together around the periphery so as to form a chamber. The surface of the diaphragm facing away from the substrate is exposed to a medium whose pressure is to be measured. To protect the diaphragm against corrosion or abrasion, the diaphragm surface exposed to the medium is covered with a layer of silicon carbide, preferably by chemical vapor deposition.

Abstract: The substrate (12) and/or the diaphragm (11) of the pressure sensor (10) are made of ceramic, glass, or a single-crystal material. The side of the diaphragm (11) facing the substrate (12) is covered with a layer of silicon carbide, niobium, or tantalum which, in turn, is covered with a protective layer (21) and serves as one capacitor electrode (14). The side of the substrate (12) facing the diaphragm (11) is covered with at least one additional layer of any one of said materials which, in turn, is covered with an additional protective layer (22) and serves as the second capacitor electrode (15). Substrate (12) and diaphragm (11) are soldered together by a formed part of active solder (20) which also serves as a spacer.This pressure sensor can be manufactured in a single soldering step. The maximum load capacity of the diaphragm is determined not by the strength of the joint, but only by the strength of the diaphragm material.