Patents by Inventor Manfred Gawein Tenner
Manfred Gawein Tenner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9753377Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.Type: GrantFiled: June 27, 2013Date of Patent: September 5, 2017Assignee: ASML NETHERLANDS B.V.Inventors: Hakki Ergun Cekli, Irina Lyulina, Manfred Gawein Tenner, Richard Johannes Franciscus Van Haren, Stefan Cornelis Theodorus Van Der Sanden
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Publication number: 20150205213Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.Type: ApplicationFiled: June 27, 2013Publication date: July 23, 2015Applicant: ASML Netherlands B.V.Inventors: Hakki Ergun Cekli, Irina Lyulina, Manfred Gawein Tenner, Richard Johannes Franciscus Van Haren, Stefan Cornelis Theodorus Van Der Sanden
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Patent number: 8980724Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: GrantFiled: March 10, 2014Date of Patent: March 17, 2015Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Publication number: 20140192333Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: ApplicationFiled: March 10, 2014Publication date: July 10, 2014Applicants: ASML Netherlands B.V., ASML Holding N.VInventors: Harry SEWELL, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Patent number: 8709908Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: GrantFiled: March 16, 2010Date of Patent: April 29, 2014Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Patent number: 8625096Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.Type: GrantFiled: March 24, 2010Date of Patent: January 7, 2014Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Publication number: 20120218533Abstract: Estimating model parameters of a lithographic apparatus and controlling lithographic processing by a lithographic apparatus includes performing an exposure using a lithographic apparatus projecting a pattern onto a wafer. A set of predetermined wafer measurement locations is measured. Predetermined and measured locations of the marks are used to generate radial basis functions. Model parameters of said substrate are calculated using the generated radial basis functions as a basis function across said substrate. Finally, the estimated model parameters are used to control the lithographic apparatus in order to expose the substrate.Type: ApplicationFiled: February 23, 2012Publication date: August 30, 2012Applicant: ASML NETHERLANDS B.V.Inventors: Irina LYULINA, Hubertus Johannes Gertrudus Simons, Manfred Gawein Tenner, Pieter Jacob Heres, Marc Van Kemenade, Daan Maurits Slotboom, Stefan Cornelis Theodorus Van Der Sanden
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Patent number: 8208121Abstract: An alignment mark comprising a periodic structure formed by mark lines is described. In an embodiment, the alignment mark is formed in a scribe lane of a substrate, the scribe lane extending in a scribe lane direction. The alignment mark includes: a first area including a first periodic structure formed by first mark lines extending in a first direction, the first direction being at a first angle ? with respect to the scribe lane direction: 0°<?<90° and a second area comprising second periodic structure formed by second mark lines extending in a second direction, the second direction being at a second angle ? with respect to the scribe lane direction: ?90°??<0°.Type: GrantFiled: January 30, 2009Date of Patent: June 26, 2012Assignee: ASML Netherlands B.V.Inventors: Franciscus Godefridus Casper Bijnen, Manfred Gawein Tenner, Patrick Warnaar, Marc Van Kemenade
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Publication number: 20110075238Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.Type: ApplicationFiled: March 24, 2010Publication date: March 31, 2011Applicant: ASML Netherlands B.V.Inventors: Harry SEWELL, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Publication number: 20100301458Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The day may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: ApplicationFiled: March 16, 2010Publication date: December 2, 2010Applicants: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Publication number: 20090195768Abstract: An alignment mark comprising a periodic structure formed by mark lines is described. In an embodiment, the alignment mark is formed in a scribe lane of a substrate, the scribe lane extending in a scribe lane direction. The alignment mark includes: a first area including a first periodic structure formed by first mark lines extending in a first direction, the first direction being at a first angle ? with respect to the scribe lane direction: 0°<?<90° and a second area comprising second periodic structure formed by second mark lines extending in a second direction, the second direction being at a second angle ? with respect to the scribe lane direction: ?90°??<0°.Type: ApplicationFiled: January 30, 2009Publication date: August 6, 2009Applicant: ASML Netherlands B.V.Inventors: Franciscus Godefridus Casper Bijnen, Manfred Gawein Tenner, Patrick Warnaar, Marc Van Kemenade
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Publication number: 20090073448Abstract: The reflected radiation from a target mark including, for example, a plurality of gratings is detected by an array of pixels. The overlay error of the gratings for each pixel is detected, and an array of overlay errors is determined. Rather than simply averaging the overlay error value for all the pixels, filtering is performed. Pixels may be filtered according to the detected value of the overlay error or the detected intensity of the pixel.Type: ApplicationFiled: September 18, 2007Publication date: March 19, 2009Applicant: ASML Netherlands B.V.Inventors: Manfred Gawein Tenner, Maurits Van Der Schaar