Abstract: One illustrative method disclosed herein includes forming a seed layer above a structure, forming a nucleation layer on the seed layer, forming a plurality of spaced-apart, vertically oriented alloy structures that are comprised of materials from the seed layer and the nucleation layer, forming a sacrificial material layer above the nucleation layer and around the alloy structures, performing an etching process to remove the alloy structures and portions of the seed layer so as to thereby define a plurality of openings, forming an initial masking structure in each of the openings, performing an etching process to remove the sacrificial material layer and the nucleation layer so as to thereby expose the structure and define a masking layer comprised of the initial masking structures, and performing at least one process operation on the structure through the masking layer.

Abstract: One illustrative method disclosed herein includes forming a seed layer above a structure, forming a nucleation layer on the seed layer, forming a plurality of spaced-apart, vertically oriented alloy structures that are comprised of materials from the seed layer and the nucleation layer, forming a sacrificial material layer above the nucleation layer and around the alloy structures, performing an etching process to remove the alloy structures and portions of the seed layer so as to thereby define a plurality of openings, forming an initial masking structure in each of the openings, performing an etching process to remove the sacrificial material layer and the nucleation layer so as to thereby expose the structure and define a masking layer comprised of the initial masking structures, and performing at least one process operation on the structure through the masking layer.

Abstract: One illustrative method disclosed herein includes forming a seed layer above a substrate that includes a conductive region, wherein the seed layer is comprised of a metal-containing material, forming a nucleation layer on the seed layer, wherein the nucleation layer is comprised of a transition metal oxide ceramic material, and performing a thermal treatment process at a temperature so as to generate a plurality of spaced-apart, vertically oriented alloy structures, wherein the alloy structures are comprised of at least one material from the seed layer and at least one material from the nucleation layer.

Abstract: One illustrative method disclosed herein includes forming a seed layer above a substrate that includes a conductive region, wherein the seed layer is comprised of a metal-containing material, forming a nucleation layer on the seed layer, wherein the nucleation layer is comprised of a transition metal oxide ceramic material, and performing a thermal treatment process at a temperature so as to generate a plurality of spaced-apart, vertically oriented alloy structures, wherein the alloy structures are comprised of at least one material from the seed layer and at least one material from the nucleation layer.

Abstract: One illustrative method disclosed herein includes forming a seed layer above a substrate that includes a conductive region, wherein the seed layer is comprised of a metal-containing material, forming a nucleation layer on the seed layer, wherein the nucleation layer is comprised of a transition metal oxide ceramic material, and performing a thermal treatment process at a temperature so as to generate a plurality of spaced-apart, vertically oriented alloy structures, wherein the alloy structures are comprised of at least one material from the seed layer and at least one material from the nucleation layer.